Semiconductor physical quantity sensing device
First Claim
1. A semiconductor physical quantity sensing device, comprising:
- a sensor element to generate an electric signal responsive to a detected physical quantity;
an output terminal to output to the exterior the electric signal generated by the sensor element;
a data input terminal to input serial digital data;
an auxiliary memory circuit to temporarily store trimming data, for adjusting output characteristics of the sensor element, inputted from the data input terminal;
a re-writable read-only main memory circuit to store, by way of an electrical re-write action, the trimming data stored in said auxiliary memory circuit;
an adjusting circuit to adjust the output characteristic of the sensor element based on trimming data stored in the auxiliary memory circuit or trimming data stored in the main memory circuit,operation of the semiconductor physical quantity sensing device being configured to include active and passive elements formed on the same semiconductor chip and manufactured only by a CMOS manufacturing process, andan operation selection circuit to control operation of the auxiliary memory circuit and the main memory circuit based partly on digital data stored by the auxiliary memory circuit.
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Accused Products
Abstract
A semiconductor physical quantity sensing device to perform electrical trimming at low cost by using a CMOS manufacturing process and a small number of terminals. The semiconductor physical quantity sensing device includes a wheatstone bridge circuit, which is a sensor element, an auxiliary memory circuit, which stores provisional trimming data, a main memory circuit, which stores finalized trimming data, an adjusting circuit, which adjusts the output characteristics of the sensor element based on trimming data stored in the auxiliary memory circuit or the main memory circuit, with the elements and circuits being only configured of active elements and passive elements manufactured by way of the CMOS manufacturing process formed on a same semiconductor chip.
40 Citations
21 Claims
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1. A semiconductor physical quantity sensing device, comprising:
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a sensor element to generate an electric signal responsive to a detected physical quantity; an output terminal to output to the exterior the electric signal generated by the sensor element; a data input terminal to input serial digital data; an auxiliary memory circuit to temporarily store trimming data, for adjusting output characteristics of the sensor element, inputted from the data input terminal; a re-writable read-only main memory circuit to store, by way of an electrical re-write action, the trimming data stored in said auxiliary memory circuit; an adjusting circuit to adjust the output characteristic of the sensor element based on trimming data stored in the auxiliary memory circuit or trimming data stored in the main memory circuit, operation of the semiconductor physical quantity sensing device being configured to include active and passive elements formed on the same semiconductor chip and manufactured only by a CMOS manufacturing process, and an operation selection circuit to control operation of the auxiliary memory circuit and the main memory circuit based partly on digital data stored by the auxiliary memory circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor physical quantity sensing device, comprising:
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a sensor element to generate an electric signal responsive to a detected physical quantity; an output terminal to output to the exterior the electric signal generated by the sensor element; a data input terminal to input serial digital data; an auxiliary memory circuit to temporarily store trimming data, for adjusting output characteristics of the sensor element, inputted from the data input terminal; a re-writable read-only main memory circuit to store, by way of an electrical re-write action, the trimming data stored in said auxiliary memory circuit; an adjusting circuit to adjust the output characteristic of the sensor element based on trimming data stored in the auxiliary memory circuit or trimming data stored in the main memory circuit; operation of the semiconductor physical quantity sensing device being configured to include only active and passive elements formed on the same semiconductor chip and manufactured only by a CMOS manufacturing process, wherein the data input terminal also functions as a terminal to output data stored in the auxiliary memory circuit; the auxiliary memory circuit outputs stored data as serial digital data; and the semiconductor physical quantity sensing device sensing device further includes, between the data input terminal and the auxiliary memory circuit, an input/output switching circuit to switch between either supplying to the auxiliary memory circuit serial digital data inputted from the data input terminal or supplying of the data input terminal serial digital data outputted from the auxiliary memory circuit.
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13. A semiconductor physical quantity sensing device, comprising:
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a sensor element to generate an electric signal responsive to a detected physical quantity; an output terminal to output to the exterior the electric signal generated by the sensor element; a data input terminal to input serial digital data; an auxiliary memory circuit to temporarily store trimming data, for adjusting output characteristics of the sensor element, inputted from the data input terminal; a re-writable read-only main memory circuit to store, by way of an electrical re-write action, the trimming data stored in said auxiliary memory circuit; and an adjusting circuit to adjust the output characteristic of the sensor element based on trimming data stored in the auxiliary memory circuit or trimming data stored in the main memory circuit, operation of the semiconductor physical quantity sensing device being configured to include only active and passive elements formed on the same semiconductor chip and manufactured only by a CMOS manufacturing process, wherein the semiconductor physical quantity sensing device has seven terminals in total, including the output terminal, the data input terminal, a terminal to supply earth potential, a terminal to supply operating voltage, a terminal to input an external clock, a terminal to input signals to control internal digital circuits, and a terminal to supply a write voltage higher than an operating voltage for writing data into the main memory circuit, and also including a circuit to generate a different second write voltage based on the write voltage.
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14. A semiconductor physical quantity sensing device, comprising:
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a sensor element to generate an electric signal responsive to a detected physical quantity; an output terminal to output to the exterior the electric signal generated by the sensor element; a data input terminal to input serial digital data; an auxiliary memory circuit to termporarily store trimming data, for adusting output characteristics of the sensor element, inputted from the data input terminal; a re-writable read-only main memory circuit to store, by way of an electrical re-write action, the trimming data stored in said auxiliary memory circuit; and an adjusting circuit to adjust the output characteristic of the sensor element based on trimming data stored in the auxiliary memory circuit or trimming data stored in the main memory circuit, operation of the semiconductor physical quantity sensing device being configured to include only active and passive elements formed on the same semiconductor chip and manufactured only by a CMOS manufacturing process, wherein the semiconductor physical quantity sensing device has eight terminals in total, including the output terminal, the data input terminal, a terminal to supply earth potential, a terminal to supply operating voltage, a terminal to input an external clock, a terminal to input signals to control internal digital circuits, a terminal to supply first write voltage higher than an operating voltage to write data into the main memory circuit, and a terminal to supply a second write voltage higher than the operating voltage and different from the first write voltage.
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15. A semiconductor physical quantity sensing device, comprising:
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a sensor element to output an electrical signal indicating a detected physical quantity; an output terminal to output the electrical signal, generated by the sensor element, to outside the semiconductor physical quantity sensing device; a data input terminal to input serial digital data; a ground terminal to supply a ground potential; a power supply terminal to supply a power supply voltage; an auxiliary memory circuit to temporarily store trimming data, for adjusting output characteristics of the sensor element, inputted from the data input terminal; a re-writable read-only main memory circuit to store, by way of an electrical re-write action, the trimming data stored in said auxiliary memory circuit; and a first write terminal to input an external clock or supply a first write voltage higher than the power supply voltage to write data into the main memory circuit; a second write terminal to supply a second write voltage, higher than the power supply voltage and different from the first write voltage, to write data into the main memory circuit; an operation selection circuit to control the auxiliary memory circuit and the main memory circuit based on at least a portion of digital data stored in the auxiliary memory circuit; a signal distinguishing unit to distinguish whether a voltage applied to the first write terminal is the external clock or the first write voltage, respectively, to supply the external clock to the auxiliary memory circuit or to supply the first write voltage to the main memory circuit; and an adjusting circuit to adjust the output characteristics of the sensor element based on the trimming data stored in the auxiliary memory circuit or based on the trimming data stored in the main memory circuit, the sensor element, the auxiliary memory circuit, the main memory circuit, the operation selection circuit, the signal distinguishing unit, and the adjusting circuit being made of active elements and passive elements manufactured through a CMOS manufacturing process and being formed on one single semiconductor chip together with the output terminal, the data input terminal, the ground terminal, the power supply terminal, the first write terminal, and the second write terminal. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification