Semiconductor apparatus and a semiconductor unit, the semiconductor unit including a functional layer including a semiconductor element, and a highly conductive layer

• US 7,180,924 B2
• Filed: 05/21/2003
• Issued: 02/20/2007
• Est. Priority Date: 05/30/2002
• Status: Expired due to Fees

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Kondo, Takayuki
• Primary Examiner(s): Munson; Gene M.
• Application Number:
  US10/442,096
• Publication Number:
  US 20040016932A1
• Time in Patent Office: 1,371 Days
• Field of Search: 257/85, 257/94, 372/44, 372/45, 372/44.01, 372/45.01, 372/45.012
• US Class Current: 372/45.01
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/83001 involving a temporary auxiliary member not forming part of the bonding apparatus
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/838 Bonding techniques
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01031 Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01049 Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13063 : Metal-Semiconductor Field-Effect Transistor [MESFET]
• CPC Class Codes: H01L 2924/13064 : High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H10K 50/844 : Encapsulations
• CPC Class Codes: H10K 50/85 : Arrangements for extracting light from the devices
• CPC Class Codes: H10K 59/12 : Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/873 : Encapsulations
• CPC Class Codes: H10K 59/875 : Arrangements for extracting light from the devices
• CPC Class Codes: H10K 71/00 : Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

The invention provides a semiconductor unit and a semiconductor apparatus having a low electric resistance as a whole, even when the electric resistance of a functional layer or a semiconductor substrate is high. A method of making the semiconductor unit and apparatus is also provided. An electrooptic apparatus and an electronic apparatus are also provided. A semiconductor apparatus includes a predetermined substrate and a semiconductor unit bonded to the substrate. The semiconductor unit includes a highly conductive layer and a functional layer including a semiconductor element.

Claims

1. A semiconductor unit, comprising:

a functional layer including a semiconductor layer and a mirror

a highly conductive layer disposed between the functional layer and an external substrate, the highly conductive layer contacting the mirror; and

an insulating layer disposed on a face of the highly conductive layer and between the highly conductive layer and the external substrate.

2. A semiconductor apparatus, comprising:

a semiconductor substrate;

a functional layer including a semiconductor layer, a first mirror and a second mirror;

a highly conductive layer disposed between the functional layer and the semiconductor substrate; and

an insulating layer disposed on a face of the semiconductor substrate, the insulating layer being disposed between the highly conductive layer and the semiconductor substrate,

the first mirror sharing a common boundary with the highly conductive layer.

3. The semiconductor apparatus of claim 2, the highly conductive layer being a high carrier density layer.

4. A semiconductor apparatus comprising:

a substrate; and

a semiconductor unit including a first mirror, a second mirror and a semiconductor layer disposed between the first mirror and the second mirror,

the first mirror disposed between the semiconductor layer and the substrate,

the first mirror including a highly conductive layer,

the highly conductive layer including an active sublayer, a first electron supply sublayer and a second electron sublayer, and

the active sublayer being disposed between the first electron supply sublayer and the second electron supply sublayer.

5. The semiconductor apparatus of claim 4, the second electron supply sublayer being capable of generating an electron gas and formed to allow travel of the gas from the electron supply sublayer to the active sublayer.

6. The semiconductor apparatus of claim 4, the semiconductor layer including a current aperture having a ring shape.

7. The semiconductor apparatus of claim 4, the semiconductor layer including a current aperture that has a first portion made of a semiconductor material, the first portion being surrounded by a second portion made of an oxide material.

8. The semiconductor apparatus of claim 4, the highly conductive layer being a high carrier mobility layer.

9. The semiconductor apparatus of claim 4, the semiconductor unit being a surface emitting laser.

10. The semiconductor apparatus of claim 9, the surface emitting laser including a current aperture that is formed by an insulating material.

11. The semiconductor apparatus of claim 10, the insulating material being an oxide layer.

12. The semiconductor apparatus of claim 4, the semiconductor layer including an active layer and a cladding layer.

13. The semiconductor apparatus of claim 4, the semiconductor unit further including a first electrode and a second electrode to drive the semiconductor unit, the first electrode being formed on the first mirror and the second electrode being formed on the second mirror through a contact layer.