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High efficiency method for performing a chemical vapordeposition utilizing a nonvolatile precursor

  • US 7,182,979 B2
  • Filed: 08/05/2002
  • Issued: 02/27/2007
  • Est. Priority Date: 05/14/1993
  • Status: Expired due to Fees
First Claim
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1. A method for performing a chemical vapor deposition, comprising:

  • providing a solution comprising a nonvolatile precursor suitable for chemical vapor deposition dissolved in a solvent, wherein the solvent is an inorganic liquid;

    transporting the solution as a liquid stream to a chemical vapor deposition chamber;

    subjecting the solution to a temperature and pressure higher than atmospheric pressure sufficient to maintain the solution in a liquid state during transporting;

    nebulizing the liquid stream in the chemical vapor deposition chamber;

    applying the nebulized liquid stream to a semiconductor wafer surface, wherein the wafer surface is at a temperature less than that of the solution during transporting; and

    subjecting the nebulized liquid stream to a temperature and a vacuum pressure in the chemical vapor deposition chamber by raising the wafer to a temperature sufficient to rapidly evaporate the solvent after the solution contacts the semiconductor wafer.

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