Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
First Claim
1. A method of fabricating a semiconductor-on-insulator structure from a pair of semiconductor wafers, each of said wafers having opposing first and second surfaces, said method comprising:
- forming an oxide layer on at least a first surface of a first one of said wafers;
performing a cleavage ion implantation step on one of said pair of wafers by ion implanting a second species to define a cleavage plane across a diameter of said wafer at a predetermined depth below the top surface of said one wafer;
performing a bonding enhancement implantation step by ion implantation of a first species in the first surface of at least either of said pair of wafers;
bonding said pair of wafers together by placing the first surfaces of said pair of wafers onto one another so as to form an semiconductor-on-insulator structure;
separating said one wafer along said cleavage plane so as to remove a portion of said one wafer between said second surface and said cleavage plane, whereby to form an exposed cleaved surface of a remaining portion of said one wafer on said semiconductor-on-insulator structure;
smoothing said cleaved surface;
wherein said bonding enhancement implantation step comprises plasma immersion ion implantation of said first species; and
wherein the step of plasma immersion ion implantation of said first species comprises;
placing either of said pair of wafers in a first process zone;
introducing a first process gas containing a precursor of said first species;
generating a first oscillating plasma current from said first process gas in a first closed torroidal path extending through a first reentrant conduit external of said first process zone and through said first process zone.
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Abstract
A method of fabricating a semiconductor-on-insulator structure from a pair of semiconductor wafers, includes forming an oxide layer on at least a first surface of a first one of the wafers and performing a bonding enhancement implantation step by ion implantation of a first species in the first surface of at least either of the pair of wafers. The method further includes performing a cleavage ion implantation step on one of the pair of wafers by ion implanting a second species to define a cleavage plane across a diameter of the wafer at the predetermined depth below the top surface of the one wafer. The wafers are then bonded together by placing the first surfaces of the pair of wafers onto one another so as to form an semiconductor-on-insulator structure. The method also includes separating the one wafer along the cleavage plane so as to remove a portion of the one wafer between the second surface and the cleavage plane, whereby to form an exposed cleaved surface of a remaining portion of the one wafer on the semiconductor-on-insulator structure. Finally, the cleaved surface is smoothed, preferably by carrying out a low energy high momentum ion implantation step.
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Citations
27 Claims
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1. A method of fabricating a semiconductor-on-insulator structure from a pair of semiconductor wafers, each of said wafers having opposing first and second surfaces, said method comprising:
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forming an oxide layer on at least a first surface of a first one of said wafers; performing a cleavage ion implantation step on one of said pair of wafers by ion implanting a second species to define a cleavage plane across a diameter of said wafer at a predetermined depth below the top surface of said one wafer; performing a bonding enhancement implantation step by ion implantation of a first species in the first surface of at least either of said pair of wafers; bonding said pair of wafers together by placing the first surfaces of said pair of wafers onto one another so as to form an semiconductor-on-insulator structure; separating said one wafer along said cleavage plane so as to remove a portion of said one wafer between said second surface and said cleavage plane, whereby to form an exposed cleaved surface of a remaining portion of said one wafer on said semiconductor-on-insulator structure; smoothing said cleaved surface; wherein said bonding enhancement implantation step comprises plasma immersion ion implantation of said first species; and wherein the step of plasma immersion ion implantation of said first species comprises; placing either of said pair of wafers in a first process zone; introducing a first process gas containing a precursor of said first species; generating a first oscillating plasma current from said first process gas in a first closed torroidal path extending through a first reentrant conduit external of said first process zone and through said first process zone. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification