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Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement

  • US 7,183,177 B2
  • Filed: 11/16/2004
  • Issued: 02/27/2007
  • Est. Priority Date: 08/11/2000
  • Status: Expired due to Fees
First Claim
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1. A method of fabricating a semiconductor-on-insulator structure from a pair of semiconductor wafers, each of said wafers having opposing first and second surfaces, said method comprising:

  • forming an oxide layer on at least a first surface of a first one of said wafers;

    performing a cleavage ion implantation step on one of said pair of wafers by ion implanting a second species to define a cleavage plane across a diameter of said wafer at a predetermined depth below the top surface of said one wafer;

    performing a bonding enhancement implantation step by ion implantation of a first species in the first surface of at least either of said pair of wafers;

    bonding said pair of wafers together by placing the first surfaces of said pair of wafers onto one another so as to form an semiconductor-on-insulator structure;

    separating said one wafer along said cleavage plane so as to remove a portion of said one wafer between said second surface and said cleavage plane, whereby to form an exposed cleaved surface of a remaining portion of said one wafer on said semiconductor-on-insulator structure;

    smoothing said cleaved surface;

    wherein said bonding enhancement implantation step comprises plasma immersion ion implantation of said first species; and

    wherein the step of plasma immersion ion implantation of said first species comprises;

    placing either of said pair of wafers in a first process zone;

    introducing a first process gas containing a precursor of said first species;

    generating a first oscillating plasma current from said first process gas in a first closed torroidal path extending through a first reentrant conduit external of said first process zone and through said first process zone.

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