Lithographic apparatus for manufacturing a device

• US 7,183,566 B2
• Filed: 05/19/2004
• Issued: 02/27/2007
• Est. Priority Date: 05/28/2003
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Baselmans, Johannes Jacobus Matheus, Bleeker, Arno Jan
• Primary Examiner(s): Allen; Stephone B.
• Assistant Examiner(s): Ellis; Suezu
• Application Number:
  US10/848,583
• Publication Number:
  US 20050006563A1
• Time in Patent Office: 1,014 Days
• Field of Search: 250/548, 250/208.1, 355/53, 355/67, 355/77
• US Class Current: 250/548
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/70516 Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
• CPC Class Codes: G03F 7/70591 Testing optical components

Abstract

To calibrate a lithographic apparatus having a programmable patterning means, a sensor, such as a CCD, CMOS sensor or photo-diode array, having detector elements larger than the size of a spot corresponding to a single pixel of the programmable patterning means is used. Pixels are selectively activated singly or in groups.

Claims

1. A lithographic apparatus, comprising:

an illumination system that supplies a projection beam of radiation;

an array of individually controllable elements that patterns the projection beam;

a substrate table that includes an area for supporting a substrate;

a projection system that projects the patterned projection beam onto a target portion of the substrate; and

a detector moveable to a position that is in a path of the patterned projection beam and substantially in the area of the substrate table for supporting the substrate, the detector having detector elements, each of the detector elements being larger than a spot corresponding to a single pixel of the array of individually controllable elements.

2. The lithographic apparatus of claim 1, wherein the detector is mounted on the substrate table.

3. The lithographic apparatus of claim 1, wherein the detector comprises a charge coupled device (CCD), a Complementary Metal Oxide Semiconductor (CMOS) sensor, or a photo-diode array.

4. The lithography apparatus of claim 1, wherein the detector further comprises an aperture member having an aperture for each corresponding one of the detector elements.

5. The lithography apparatus of claim 4, wherein each of the apertures is larger than the spot that corresponded to the single pixel of the array of individually controllable elements.

6. The lithography apparatus of claim 4, wherein each of the apertures is larger than ten times the size of the spot.

7. The lithographic apparatus of claim 4, wherein each of the apertures is smaller than about 75% of a size of each of the detector elements.

8. The lithographic apparatus of claim 1, wherein the detector further comprises a microlens array, wherein each microlens of the microlens array spreads the radiation corresponding to a single element of the array of individually controllable elements across one or more of the detector elements.

9. A lithographic apparatus, comprising:

an illumination system configured to supply a beam of radiation;

an array of individually controllable elements, each of the individually controllable elements defining a pixel, the array being configured to pattern the beam of radiation;

a projection system configured to project the patterned beam onto a target portion of a substrate; and

a detector comprising,

detector elements, and

a microlens array,

wherein the detector is moveable to a position that is in a path of the patterned beam,

wherein each of the detector elements is larger than a spot created by a corresponding one of the pixels, and

wherein each microlens of the microlens array spreads the spot created by the corresponding one of the pixels across one or more of the detector elements.

10. The lithographic apparatus of claim 9, wherein the detector is mounted on a substrate table.

11. The lithographic apparatus of claim 9, wherein the detector comprises a charge coupled device (CCD), a Complementary Metal Oxide Semiconductor (CMOS) sensor, or a photo-diode array.

12. The lithography apparatus of claim 9, wherein the detector further comprises:

an aperture member including an aperture for each corresponding one of the detector elements.

13. The lithography apparatus of claim 12, wherein each of the apertures is larger than the spot.

14. The lithography apparatus of claim 12, wherein each of the apertures is larger than ten times the size of the spot.

15. The lithographic apparatus of claim 12, wherein each of the apertures is smaller than about 75% of a size of each of the detector elements.