Semiconductor element and manufacturing method for the same
First Claim
1. A semiconductor element, comprising:
- a substrate having a pair of main surfaces that face each other;
a semiconductor layer of a first conductivity type on one of the main surfaces of said substrate;
a semiconductor layer of a second conductivity type on said semiconductor layer of the first conductivity type;
an active layer formed between said semiconductor layer of the first conductivity type and said semiconductor layer of the second conductivity type; and
a reflective layer formed on said semiconductor layer of the second conductivity type for reflecting light from said active layer toward said semiconductor layer of the second conductivity type,wherein the other main surface of said substrate is used as the main light emitting surface,wherein a translucent conductive layer is formed between said reflective layer and the semiconductor layer of the second conductivity type, and an uneven interface is formed as the interface between said translucent conductive layer and said reflective layer.
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Accused Products
Abstract
A nitride semiconductor light emitting element is provided with: a substrate 11 having a pair of main surfaces that face each other; a nitride semiconductor layer of a first conductivity type layered on one of the main surfaces of substrate 11; a nitride semiconductor layer of a second conductivity type layered on the nitride semiconductor layer of the first conductivity type; an active layer 14 formed between the nitride semiconductor layer of the first conductivity type and the nitride semiconductor layer of the second conductivity type; and a reflective layer 16 formed on the nitride semiconductor layer of the second conductivity type for reflecting light from active layer 14 toward the nitride semiconductor layer of the second conductivity type. This nitride semiconductor light emitting element can be mounted on a circuit board, with the other main surface of the above described substrate 11 being used as the main light emitting surface. Furthermore, a translucent conductive layer 17 is formed between reflective layer 16 and the nitride semiconductor layer of the second conductivity type, and an uneven interface 22 is formed as the interface between translucent conductive layer 17 and reflective layer 16.
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Citations
20 Claims
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1. A semiconductor element, comprising:
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a substrate having a pair of main surfaces that face each other; a semiconductor layer of a first conductivity type on one of the main surfaces of said substrate; a semiconductor layer of a second conductivity type on said semiconductor layer of the first conductivity type; an active layer formed between said semiconductor layer of the first conductivity type and said semiconductor layer of the second conductivity type; and a reflective layer formed on said semiconductor layer of the second conductivity type for reflecting light from said active layer toward said semiconductor layer of the second conductivity type, wherein the other main surface of said substrate is used as the main light emitting surface, wherein a translucent conductive layer is formed between said reflective layer and the semiconductor layer of the second conductivity type, and an uneven interface is formed as the interface between said translucent conductive layer and said reflective layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification