Semiconductor device including square type storage node and method of manufacturing the same

• US 7,183,603 B2
• Filed: 03/31/2005
• Issued: 02/27/2007
• Est. Priority Date: 03/31/2004
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Park, Je-Min
• Primary Examiner(s): HO, TU TU V
• Application Number:
  US11/096,852
• Publication Number:
  US 20050218440A1
• Time in Patent Office: 698 Days
• Field of Search: 257/298
• US Class Current: 257/298
• CPC Class Codes: H01L 27/0207 Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H10B 12/0335 Making a connection between the transistor and the capacitor, e.g. plug
• CPC Class Codes: H10B 12/315 with the capacitor higher than a bit line
• CPC Class Codes: H10B 12/485 Bit line contacts

Abstract

A semiconductor device including square type storage nodes and a method of manufacturing the same. Word lines are formed on a semiconductor substrate Bit lines are formed separated from the word lines and perpendicular to the word lines. Active regions are defined to have a major axis slanted to the word line direction and the bit line direction. Storage nodes of capacitors are arranged along the word lines overlapping the word lines and arranged in a zigzag pattern that centers upon the bit lines. Storage node contacts are formed to electrically connect the active regions to the storage nodes, while being self-aligned with the bit lines, separated from each other on the word lines, and with a larger line width in the word line direction than the bit line direction to overlap large areas of the storage nodes.

Claims

1. A semiconductor device, comprising:

word lines formed on a semiconductor substrate in a word line direction;

bit lines formed on the semiconductor structure in a bit line direction, wherein the bit lines are separated from the word lines and the bit line direction is perpendicular to the word lines;

active regions defined on the semiconductor substrate, wherein the active regions have a major axis slanted to the word lines direction and to the bit line direction;

capacitor storage nodes arranged in a line in the word line direction overlapping the word lines and arranged in a zigzag pattern in the bit line direction, the zigzag pattern centered on the bit lines; and

storage node contacts electrically connecting the active regions with the capacitor storage nodes, wherein the storage node contacts are self-aligned with the bit lines, separated from each other by the word lines, have a width in the word line direction larger than in the bit line direction, and overlap areas of the capacitor storage nodes.

2. The semiconductor device of claim 1, wherein the storage nodes are arranged to overlap areas between the word lines and the bit lines.

3. The semiconductor device of claim 1, further comprising auxiliary expansion pads arranged to overlap the storage node contacts and to electrically connect the storage node contacts to the storage nodes, wherein the auxiliary expansion pads extend in the word line direction relative to the storage node contacts to overlap larger areas of the storage nodes.

4. The semiconductor device of claim 3, wherein the auxiliary expansion pads extend in the word line direction to partially overlap the bit lines.

5. The semiconductor device of claim 1, wherein a pitch between the word lines is twice a minimum line width pitch F, and a pitch between the bit lines is larger than twice the minimum line width pitch F and smaller than four times the minimum line width pitch F.

6. The semiconductor device of claim 5, wherein the pitch between the bit lines is one of three times and 3.3 times the minimum line width pitch F.

7. The semiconductor device of claim 1, wherein the storage nodes are formed in a one cylindrical stack (OCS) type.

8. The semiconductor device of claim 1, wherein an area occupied by the storage nodes has a square shape having a ratio of an X-axis and a Y-axis of about 1:

1.

9. A semiconductor device, comprising:

word lines formed on a semiconductor substrate in a word line direction;

bit lines formed on the semiconductor structure in a bit line direction, wherein the bit lines are separated from the word lines and the bit line direction is perpendicular to the word lines;

active regions defined on the semiconductor substrate, wherein the active regions have a major axis slanted to the word lines direction and to the bit line direction;

a first insulating layer insulating spaces between the word lines;

first and second contact pads contacting the active regions between the word lines by penetrating the first insulating layer and self-aligning to the word lines;

a second insulating layer insulating the space between the bit lines and the word lines;

bit line contacts electrically connecting the bit lines to the second contact pads by penetrating the second insulating layer;

capacitor storage nodes arranged in a line in the word line direction overlapping the word lines and arranged in a zigzag pattern in the bit line direction, the zigzag pattern centered on the bit lines;

a bit line capping insulating layer on the bit lines in an interlayer between the bit lines and capacitor storage nodes and self-aligned with the bit lines;

protection spacers for on upper sidewalls of the bit line capping insulating layer;

a third insulating layer covering a remaining portion of the sidewalls of the bit line capping insulating layer filling the spaces between the bit lines to separate the bit lines; and

storage node contacts electrically connecting the first contact pads to the capacitor storage nodes through the third insulating layer, wherein the storage node contacts are aligned with the bit lines by the protection spacers and separated from each other by the bit line capping insulating layer, have a width in the word line direction longer than in the bit line direction, and overlap areas of the capacitor storage nodes.

10. The semiconductor device of claim 9, further comprising:

a fourth insulating layer formed on the third insulating layer; and

auxiliary expansion pads penetrating the fourth insulating layer and overlapping the storage node contacts to electrically connect the storage node contacts to the capacitor storage nodes,

wherein the auxiliary expansion pads extend in the word line direction farther than the storage node contacts to overlap large areas of the capacitor storage nodes than the storage node contacts.

11. The semiconductor device of claim 10, wherein the auxiliary expansion pads extend in the word line direction to partially overlap the bit lines.

12. The semiconductor device of claim 9, wherein the protection spacers partially extend to an interface of the third insulating layer between the storage node contacts and extend to the storage node contacts in the bit line direction to self-align the storage node contacts with the protection spacers.

13. The semiconductor device of claim 9, wherein the storage nodes are formed in an OCS type.

14. The semiconductor device of claim 9, wherein an area occupied by the storage nodes has a square shape having a ratio of an X-axis and a Y-axis of about 1:

1.

15. A method of manufacturing a semiconductor device, the method comprising:

forming word lines on a semiconductor substrate aligned in a word line direction;

forming bit lines separated from the word lines and aligned in a bit line direction perpendicular to the word line direction;

defining active regions on the semiconductor substrate, wherein the active regions have a major axis slanted to the word line direction and bit line direction;

forming capacitor storage nodes in a line in the word line direction overlapping the word lines and in a zigzag pattern in the bit line direction, the zigzag pattern centered on the bit line; and

forming storage node contacts to electrically connect the active regions with the capacitor storage nodes, wherein forming the storage node contacts includes self-aligning the storage node contacts to the bit lines with a width in the word line direction larger than in the bit line direction and separating the storage node contacts from each other by the word lines.

16. The method of claim 15, wherein forming the storage node contacts includes arranging the storage node contacts to overlap an area between the word lines and the bit lines.

17. The method of claim 15, further comprising forming auxiliary expansion pads, wherein forming the auxiliary expansion pads includes arranging the auxiliary expansion pads to overlap the storage node contacts to electrically connect the storage node contacts with the capacitor storage nodes and securing an area overlapping the storage nodes by extending the auxiliary expansion pads in the word line direction.

18. The method of claim 17, wherein forming the auxiliary expansion pads includes extending the auxiliary expansion pads in the word line direction to partially overlap the bit lines.

19. The method of claim 15, wherein forming the capacitor storage nodes includes forming the capacitor storage nodes in an OCS type.

20. The method of claim 15, wherein forming the capacitor storage nodes includes arranging the capacitor storage nodes to occupy an area that has a square shape having a ration of an X-axis and a Y-axis of about 1:

1.

21. A method of manufacturing a semiconductor device, the method comprising:

forming word lines on a semiconductor substrate aligned in a word line direction;

forming bit lines separated from the word lines and aligned in a bit line direction perpendicular to the word line direction;

defining active regions on the semiconductor substrate, wherein the active regions have a major axis slanted to the word line direction and bit line direction;

forming a first insulating layer of insulating spaces between the word lines;

forming first contact pads and second contact pads that contact the active regions between the word lines by penetrating the first insulating layer;

forming a second insulating layer of insulating spaces between the bit lines and the word lines;

forming bit contact lines that electrically connect the bit lines to the second contact pads by penetrating the second insulating layer;

forming capacitor storage nodes in a line in the word line direction overlapping the word lines and in a zigzag pattern in the bit line direction, the zigzag pattern centered on the bit lines;

forming a bit line capping insulating layer in an interlayer between the bit lines and the capacitor storage nodes, on the bit lines, wherein forming the bit line capping insulating layer includes self-aligning the bit line capping insulating layer to the bit lines;

forming a third insulating layer of insulating spaces between the bit line capping insulating layer and the bit lines;

forming a hard mask of a band type on the third insulating layer to overlap the word lines, extend in the word line direction and cross the bit line capping insulating layer;

forming recessed portions on the third insulating layer to partially expose sidewalls of the bit line capping insulating layer by etching the third insulating layer to a predetermined depth using the hard mask as an etch mask;

forming protection spacers on sidewalls of the recessed portions including upper sidewalls of the bit line capping insulating layer and sidewalls of the third insulating layer;

forming contact holes exposing upper surfaces of the first contact pads through the third insulating layer and second insulating layer by etching bottoms of the recessed portions exposed through the protection spacers by using the protection spacers as an etch mask;

forming a conductive layer filling the contact holes; and

forming storage node contacts electrically connecting to the first contact pads by planarizing the conductive layer until an upper surface of the bit line capping insulating layer is exposed, wherein forming the storage node contacts includes aligning the storage node contacts to the bit lines by the protection spacers with a width in the word line direction larger than in the bit line direction, separating the storage node contacts from each other by the word lines, and overlapping an area over the capacitor storage nodes.

22. The method of claim 21, further comprising:

forming a fourth insulating layer on the third insulating layer; and

forming auxiliary expansion pads by penetrating the fourth insulating layer and overlapping the storage node contacts to electrically connect the storage node contacts to the capacitor storage nodes, wherein forming the auxiliary expansion pads includes overlapping areas of the capacitor storage nodes by extending the auxiliary expansion pads in the word line direction farther than the storage node contacts.

23. The method of claim 22, wherein forming the auxiliary expansion pads includes extending the auxiliary expansion pads in the word line direction to partially overlap the bit lines.

24. The method of claim 21, wherein forming the hard mask includes forming the hard mask of a polysilicon layer to realize an etch selectivity against the bit line capping insulating layer, the protection spacers, and the second and third insulating layers.

25. The method of claim 21, wherein forming the bit line capping insulating layer includes depositing the bit line capping insulating layer on a layer for the bit lines before patterning the bit lines and patterning the bit line capping insulating layer when patterning the bit lines to align the bit line capping insulating layer with the bit lines.

26. The method of claim 21, further comprising performing an etch before forming the protection spacers to increase a width of the recessed portions.

27. The method of claim 21, wherein forming the capacitor storage nodes includes forming the capacitor storage nodes in an OCS type.

28. The method of claim 21, wherein forming the capacitor storage nodes includes arranging the capacitor storage nodes to occupy an area that has a square shape having a ration of an X-axis and a Y-axis of about 1:

1.

29. The method of claim 21, wherein forming the word lines includes forming the word lines at a pitch that is twice a minimum line width pitch F,

and forming the bit lines includes forming the bit lines at a pitch that is larger than twice the minimum line width pitch F and smaller than four times the minimum line width pitch F.

30. The method of claim 29, wherein forming the bit lines includes forming the bit lines at a pitch that is one of three times and 3.3 times the minimum line width pitch F.

31. A method of manufacturing a semiconductor device, comprising:

defining active regions on a semiconductor substrate;

forming word lines across the active regions of the semiconductor substrate in a direction slanted to a major axis of the active regions;

forming a first insulating layer of insulating spaces between the word lines;

forming first contact pads and second contact pads that contact the active regions between the word lines by penetrating the first insulating layer and self-aligning to the word lines;

forming a second insulating layer on the first insulating layer, the second insulating layer covering the first and second contact pads;

forming bit line contacts aligned to the second contact pads through the second insulating layer;

forming bit lines and a bit line capping insulating layer by sequentially forming and patterning a bit line layer on the second insulating layer to electrically connect the bit lines to the bit line contacts and to the bit line capping insulating layer, wherein forming bit lines includes separating the bit lines from the word lines and forming the bit lines perpendicular to the word lines;

forming a third insulating layer to fill a space between the bit lines and the bit line capping insulating layer;

forming a hard mask of a band type on the third insulating layer, wherein forming the hard mask includes overlapping the word lines and extending the mask in the word line direction and thereby crossing the bit line capping insulating layer;

forming recessed portions on the third insulating layer to partially expose sidewalls of the bit line capping insulating layer by etching the third insulating layer to a predetermined depth using the hard mask as an etch mask;

forming protection spacers on sidewalls of the recessed portions including upper sidewalls of the bit line capping insulating layer and sidewalls of the third insulating layer;

forming contact holes exposing upper surfaces of the first contact pads through the third insulating layer and the second insulating layer by etching bottoms of the recessed portions exposed through the protection spacers using the protection spacers as etch mask;

forming a conductive layer filling the contact holes;

forming storage node contacts by planarizing the conductive layer until an upper surface of the bit line capping insulating layer is exposed, wherein forming the storage node contacts includes;

electrically connecting the storage node contacts to the first contact pads,

overlapping the spaces between the word lines,

aligning the storage node contacts using the protection spacers, and

creating a larger line width in the word line direction than in the bit line direction by separating each storage node contact from each other using the bit line capping insulating layer;

forming capacitor storage nodes on the third insulating layer and on the bit line capping insulating layer, wherein forming the capacitor storage nodes includes arranged the capacitor storage nodes in lines along the word lines and overlapping the word lines, arranging the capacitor storage nodes in a zigzag pattern centering upon the bit lines along the bit lines, and electrically connecting the capacitor storage nodes to the storage node contacts; and

forming a dielectric layer and a plate node on the capacitor storage nodes.

32. The method of claim 31, wherein forming the recessed portions includes performing an etch to increase the width of the recessed portions before forming the protection spacers.

33. A method of manufacturing a semiconductor device, comprising:

defining active regions on a semiconductor substrate;

forming word lines across the active regions of the semiconductor substrate in a direction slanted to a major axis of the active regions;

forming a first insulating layer of insulating spaces between the word lines;

forming first contact pads and second contact pads that contact the active regions between the word lines by penetrating the first insulating layer and self-aligning to the word lines;

forming a second insulating layer on the first insulating layer, the second insulating layer covering the first and second contact pads;

forming bit line contacts aligned to the second contact pads through the second insulating layer;

forming bit lines and a bit line capping insulating layer by sequentially forming and patterning a bit line layer on the second insulating layer to electrically connect the bit lines to the bit line contacts and to the bit line capping insulating layer, wherein forming bit lines includes separating the bit lines from the word lines and forming the bit lines perpendicular to the word lines;

forming a third insulating layer to fill a space between the bit lines and the bit line capping insulating layer;

forming a hard mask of a band type on the third insulating layer, wherein forming the hard mask includes overlapping the word lines and extending the mask in the word line direction and thereby crossing the bit line capping insulating layer;

forming recessed portions on the third insulating layer to partially expose sidewalls of the bit line capping insulating layer by etching the third insulating layer to a predetermined depth using the hard mask as an etch mask;

forming protection spacers on sidewalls of the recessed portions including upper sidewalls of the bit line capping insulating layer and sidewalls of the third insulating layer;

forming contact holes exposing upper surfaces of the first contact pads through the third insulating layer and the second insulating layer by etching bottoms of the recessed portions exposed through the protection spacers using the protection spacers as etch mask;

forming a conductive layer filling the contact holes;

forming storage node contacts by planarizing the conductive layer until an upper surface of the bit line capping insulating layer is exposed, wherein forming the storage node contacts includes;

electrically connecting the storage node contacts to the first contact pads,

overlapping the spaces between the word lines,

aligning the storage node contacts using the protection spacers, and creating a larger line width in the word line direction than in the bit line direction by separating each storage node contact from each other using the bit line capping insulating layer;

forming a fourth insulating layer on the third insulating layer;

forming auxiliary expansion pads by penetrating the fourth insulating layer and overlapping the storage node contacts, wherein forming the auxiliary expansion pads includes extending the auxiliary expansion pads in the word line direction to the bit lines farther than the storage node contacts and extending the auxiliary expansion pads in an opposite direction from an adjacent auxiliary expansion pad;

forming capacitor storage nodes on the fourth insulating layer, wherein forming the capacitor storage nodes includes arranged the capacitor storage nodes in lines along the word lines and overlapping the word lines, arranging the capacitor storage nodes in a zigzag pattern centering upon the bit lines along the bit lines, and electrically connecting the capacitor storage nodes to the auxiliary expansion pads; and

forming a dielectric layer and a plate node on the capacitor storage nodes.

34. The method of claim 33, wherein forming the capacitor storage nodes includes forming OCS type storage nodes.

35. The method of claim 33, wherein forming the capacitor storage nodes includes arranging the capacitor storage nodes to occupy a square type area having a ratio of an X-axis and a Y-axis of 1:

1.