Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
First Claim
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1. A method of fabricating nonpolar indium gallium nitride (InGaN) based heterostructures and devices, comprising:
- (a) providing a smooth, low-defect-density III-nitride substrate or template;
(b) growing one or more nonpolar InGaN layers on the substrate or template;
(c) growing a thin low-temperature nitride capping layer on the nonpolar InGaN layers to prevent In desorption during growth of subsequent layers; and
(d) growing one or more nonpolar n-type and p-type (Al,Ga)N layers at low pressure on the capping layer.
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Abstract
A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
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Citations
20 Claims
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1. A method of fabricating nonpolar indium gallium nitride (InGaN) based heterostructures and devices, comprising:
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(a) providing a smooth, low-defect-density III-nitride substrate or template; (b) growing one or more nonpolar InGaN layers on the substrate or template; (c) growing a thin low-temperature nitride capping layer on the nonpolar InGaN layers to prevent In desorption during growth of subsequent layers; and (d) growing one or more nonpolar n-type and p-type (Al,Ga)N layers at low pressure on the capping layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of fabricating nonpolar indium gallium nitride (InGaN) based heterostructures and devices, comprising:
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(a) providing a smooth, low-defect-density III-nitride substrate or template; (b) growing nonpolar InGaN layers on the substrate or template; (c) growing a thin low-temperature gallium nitride (GaN) capping layer on the nonpolar InGaN layers to prevent In desorption during growth of a p-type GaN layer; (d) growing one or more InGaN/GaN multiple quantum wells (MQWs) near or at atmospheric pressure on the GaN capping layer; (e) growing an undoped GaN barrier near or at atmospheric pressure on the InGaN/GaN MQWs; and (f) growing one or more n-type and p-type (Al,Ga)N layers at low pressure on the undoped GaN barrier. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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