Barrier first method for single damascene trench applications
First Claim
1. A method for depositing a diffusion barrier and a metal conductive layer for metal interconnects on a substrate, the method comprising:
- (a) etching the bottoms of recessed features on a surface of the substrate to clean at least part of an underlying metal while simultaneously depositing a first portion of a diffusion barrier on at least sidewalls of recessed features wherein depositing a first portion of a diffusion barrier comprises sputtering metal from a target;
(b) after depositing the first portion of the diffusion barrier, depositing a second portion of the diffusion barrier, which covers at least the bottoms of the recessed features; and
(c) depositing the metal conductive layer over the surface of the substrate.
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Accused Products
Abstract
Methods for forming a diffusion barrier on low aspect features of an integrated circuit include at least three operations. The first operation deposits a barrier material and simultaneously etches a portion of an underlying metal at the bottoms of recessed features of the integrated circuit. The second operation deposits barrier material to provide some minimal coverage over the bottoms of the recessed features. The third operation deposits a metal conductive layer. Controlled etching is used to selectively remove barrier material from the bottom of the recessed features, either completely or partially, thus reducing the resistance of subsequently formed metal interconnects.
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Citations
23 Claims
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1. A method for depositing a diffusion barrier and a metal conductive layer for metal interconnects on a substrate, the method comprising:
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(a) etching the bottoms of recessed features on a surface of the substrate to clean at least part of an underlying metal while simultaneously depositing a first portion of a diffusion barrier on at least sidewalls of recessed features wherein depositing a first portion of a diffusion barrier comprises sputtering metal from a target; (b) after depositing the first portion of the diffusion barrier, depositing a second portion of the diffusion barrier, which covers at least the bottoms of the recessed features; and (c) depositing the metal conductive layer over the surface of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification