MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
First Claim
1. A plasma reactor for processing a semiconductor workpiece, comprising:
- a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece;
an overhead electrode overlying said workpiece support;
an RF power generator for supplying power at a frequency of said generator;
said overhead electrode having a reactance that forms a resonance with the plasma at an electrode-plasma resonant frequency which is at or near said frequency of said generator;
a source of a magnetic field; and
a fixed impedance matching element coupled to said RF power generator and to said overhead electrode.
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Accused Products
Abstract
A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.
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Citations
20 Claims
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1. A plasma reactor for processing a semiconductor workpiece, comprising:
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a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece; an overhead electrode overlying said workpiece support; an RF power generator for supplying power at a frequency of said generator; said overhead electrode having a reactance that forms a resonance with the plasma at an electrode-plasma resonant frequency which is at or near said frequency of said generator; a source of a magnetic field; and a fixed impedance matching element coupled to said RF power generator and to said overhead electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A plasma reactor for processing a semiconductor workpiece, comprising:
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a reactor chamber containing a workpiece support for holding the semiconductor workpiece; an overhead electrode overlying said workpiece support; an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level; and said overhead electrode having a reactance that forms a resonance with the plasma at an electrode-plasma resonant frequency which is at or near said frequency of said generator. - View Dependent Claims (20)
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Specification