Magnetoresistive device and method for manufacturing same
First Claim
1. A magnetic resistance device comprising:
- a first ferromagnetic layer formed of ferromagnetic material;
a non-magnetic insulative tunnel barrier layer coupled to said first ferromagnetic layer;
a second ferromagnetic layer coupled to said tunnel barrier layer and formed of ferromagnetic material; and
an anti-ferromagnetic layer formed of anti-ferromagnetic material,wherein said second ferromagnetic layer is provided between said tunnel barrier layer and said anti-ferromagnetic layer, andat least a part of said second ferromagnetic layer is formed such that a line perpendicular to a surface of said second ferromagnetic layer on a side of said anti-ferromagnetic layer passes through at least two of crystal grains of said second ferromagnetic layer.
1 Assignment
0 Petitions
Accused Products
Abstract
The heat resistance of a magnetic resistance device utilizing the TMR effect is improved. Also, the Neel effect of the magnetic resistance device utilizing the TMR effect is restrained. The magnetic resistance device includes a first ferromagnetic layer formed of ferromagnetic material, a non-magnetic insulative tunnel barrier layer coupled to the first ferromagnetic layer, a second ferromagnetic layer formed of ferromagnetic material and coupled to the tunnel barrier layer, and an anti-ferromagnetic layer formed of anti-ferromagnetic material. The second ferromagnetic layer is provided between the tunnel barrier layer and the anti-ferromagnetic layer. A perpendicular line from an optional position of the surface of the second ferromagnetic layer passes through at least two of the crystal grains of the second ferromagnetic layer.
-
Citations
10 Claims
-
1. A magnetic resistance device comprising:
-
a first ferromagnetic layer formed of ferromagnetic material; a non-magnetic insulative tunnel barrier layer coupled to said first ferromagnetic layer; a second ferromagnetic layer coupled to said tunnel barrier layer and formed of ferromagnetic material; and an anti-ferromagnetic layer formed of anti-ferromagnetic material, wherein said second ferromagnetic layer is provided between said tunnel barrier layer and said anti-ferromagnetic layer, and at least a part of said second ferromagnetic layer is formed such that a line perpendicular to a surface of said second ferromagnetic layer on a side of said anti-ferromagnetic layer passes through at least two of crystal grains of said second ferromagnetic layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A magnetic resistance device comprising:
-
a first ferromagnetic layer formed of ferromagnetic material; a non-magnetic insulative tunnel barrier layer coupled to said first ferromagnetic layer; a second ferromagnetic layer formed of ferromagnetic material and coupled to said tunnel barrier layer; and an anti-ferromagnetic layer formed of anti-ferromagnetic material containing Mn, wherein said second ferromagnetic layer is provided between said tunnel barrier layer and said anti-ferromagnetic layer, and crystal grains in said second ferromagnetic layer are arranged to prevent diffusion of said Mn from said anti-ferromagnetic layer to said tunnel barrier layer.
-
Specification