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Method and system for providing current balanced writing for memory cells and magnetic devices

  • US 7,187,577 B1
  • Filed: 11/23/2005
  • Issued: 03/06/2007
  • Est. Priority Date: 11/23/2005
  • Status: Active Grant
First Claim
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1. A magnetic memory comprising:

  • at least one magnetic storage cell, each of the at least one magnetic storage cell including a magnetic element and a selection device coupled with the magnetic element, the magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction; and

    at least one dummy resistor capable of being coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell, the selection device being coupled between the magnetic element and the at least one dummy resistor.

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