Apparatus and method for detecting an endpoint in a vapor phase etch

• US 7,189,332 B2
• Filed: 10/11/2002
• Issued: 03/13/2007
• Est. Priority Date: 09/17/2001
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: MacDonald, Niles K., Patel, Satyadev R., Shi, Hongqin, Schaadt, Gregory P., MacDonald, Douglas B.
• Primary Examiner(s): OLSEN, ALLAN W
• Application Number:
  US10/269,149
• Publication Number:
  US 20040069747A1
• Time in Patent Office: 1,614 Days
• Field of Search: None
• US Class Current: 216/2
• CPC Class Codes: B81C 1/00476 removing a sacrificial layer B81C1/00912 takes precedence
• CPC Class Codes: B81C 1/00587 Processes for avoiding or controlling over-etching not provided for in B81C1/00571 - B81C1/00579
• CPC Class Codes: B81C 2201/0132 Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
• CPC Class Codes: B81C 2201/0138 Monitoring physical parameters in the etching chamber, e.g. pressure, temperature or gas composition
• CPC Class Codes: B81C 99/0065 Process control; Yield prediction
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection

Abstract

Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber.

Claims

1. A method for etching a sample comprising:

providing a sample to be etched to an etching chamber;

providing a vapor phase etchant through the chamber to etch the sample, the vapor phase etchant capable of etching the sample in a non-energized state, wherein the etchant is selected from the group consisting of noble gas fluorides and halogen fluorides;

wherein the etchant is mixed with a non-etchant gaseous additive;

wherein a partial pressure of said etchant gas in said gas mixture is at least about 0.1 mbar, and the molar ratio of said non-etchant gaseous additive to said etchant gas is from about 1;

1 to about 500;

1;

passing the vapor phase etchant and/or etching products into and out of the etching chamber when etching the sample;

monitoring the vapor phase etchant and/or an etching product within or coming from the etching chamber,

determining the end point of the etch based on the monitoring of the gas in or from the etching chamber;

wherein the sample comprises a silicon material that is part of a silicon portion that is etched relative to a non-silicon portion of the sample, said non-silicon portion consisting of a member selected from the group consisting of a non-silicon metal, a compound of a non-silicon metal, and a silicon-containing compound in which silicon is bonded to a non-silicon element; and

wherein both said silicon portion and said non-silicon portion are exposed to the etchant gas.

2. The method of claim 1, wherein an endpoint is determined based on a value of an etching product passing below a threshold.

3. The method of claim 1, wherein an endpoint is determined when a partial pressure of a gas component decreases for a predetermined period of time.

4. The method of claim 1, wherein curve smoothing is performed prior to determining an endpoint of the etch.

5. The method of claim 1, wherein the etch is performed within a pressure range of from 0.5 to 760 Torr.

6. The method of claim 1, wherein the sample comprises a material being etched that is silicon and a layer of from 100 to 10000 A is etched.

7. The method of claim 1, wherein any unreacted etchant and etching products are passed out of the etching chamber and are directed to be released to ambient.

8. The method of claim 1, wherein any unreacted etchant and etching products are recirculated repeatedly through the etching chamber.

9. The method of claim 1, wherein an impedance is provided downstream of the etching chamber sufficient to cause an increase in an etching product followed by a decrease in the etching product at the end point of the etch.

10. The method of claim 1, wherein the etch product monitored is SiF3.

11. The method of claim 1, wherein the end point is determined at a point where the slope of a curve of a partial pressure of an etch product becomes negative or is negative for a period of time.

12. The method of claim 1, wherein a curve is provided of a partial pressure of one or more etch products, curve smoothing is performed on the curve, followed by taking a derivative of the curve and determining the end point of the etch based on the derivitized curve.

13. The method of claim 1, wherein the endpoint detection is performed after the etch process has proceeded beyond the end point, and an endpoint is determined for future etches of the same sample of the same dimensions.

14. The method of claim 1, wherein a partial pressure of an etch product is monitored, and when the partial pressure changes from increasing to decreasing over a time period T, the end point is determined.

15. The method of claim 1, wherein the vapor phase etchant is capable of chemically but not physically etching the sample.

16. The method of claim 1, wherein the sample is etched for a period of time from 2 minutes to 1 hour 50 minutes.

17. The method of claim 1, wherein an endpoint is determined within a time T of a decrease in the etch product being determined.

18. The method of claim 1, wherein the silicon is amorphous or polycrystalline silicon.

19. The method of claim 1, wherein the sample is a wafer comprising at least part of a circuit thereon and having a material deposited thereon that is reactive with the etchant gas.

20. The method of claim 1, wherein the gas flow out of the etching chamber is partially impeded so as to cause a build up in etching product up till all the silicon has been etched from the sample at which time the etching product decreases over time in the etching chamber.

21. The method of claim 1, wherein the silicon is from 60 to 100 at % Si and from 0 to 40 at % H.

22. The method in accordance with claim 1 in which said non-etchant gaseous additive has a molar-averaged formula weight of less than about 25.

23. The method in accordance with claim 1 in which said non-etchant gaseous additive has a molar-averaged formula weight of from about 4 to about 25.

24. The method in accordance with claim 1 in which said non-etchant gaseous additive has a molar-averaged formula weight of from about 4 to about 20.

25. The method in accordance with claim 1 in which said non-etchant gaseous additive has a molar-averaged formula weight of from about 4 to about 10.

26. The method in accordance with claim 1 in which said non-etchant gaseous additive has a molar-averaged thermal conductivity at 300 K and atmospheric pressure of from about 10 mW/(m K) to about 200 mW/(m K).

27. The method in accordance with claim 1 in which said non-etchant gaseous additive has a molar-averaged thermal conductivity at 300 K and atmospheric pressure of from about 140 mW/(m K) to about 190 mW/(m K).

28. The method in accordance with claim 1 in which said molar ratio is from about 10:

1 to about 200;

1.

29. The method in accordance with claim 1 in which said molar ratio is from about 20:

1 to about 150;

1.

30. The method in accordance with claim 1 in which said non-etchant gaseous additive is a member selected from the group consisting of nitrogen, argon, helium, neon, and mixtures thereof.

31. The method in accordance with claim 1 in which said non-etchant gaseous additive is a member selected from the group consisting of helium, neon, mixtures of helium and neon, and mixtures of one or both of helium and neon with one or both of nitrogen and argon.

32. The method in accordance with claim 1 in which said non-etchant gaseous additive is a member selected from the group consisting of helium, a mixture of helium and nitrogen, and a mixture of helium and argon.

33. The method in accordance with claim 1 in which said non-etchant gaseous additive is a member selected from the group consisting of helium and a mixture of helium and nitrogen.

34. The method in accordance with claim 1 in which said non-etchant gaseous additive is helium.

35. The method in accordance with claim 1 in which the partial pressure of said etchant gas is from about 0.3 mbar to about 30 mbar.

36. The method in accordance with claim 1 in which the partial pressure of said etchant gas is from about 1 mbar to about 15 mbar.

37. The method in accordance with claim 1 in which said silicon portion is a silicon layer deposited over a substrate and said non-silicon portion is a layer of a member selected from the group consisting of silicon nitride, silicon carbide, and silicon oxide deposited over said silicon layer, said non-silicon layer being patterned to leave vias therein for access of said gas mixture to said silicon layer, the exposure to said gas mixture being of sufficient duration to laterally etch away substantially all of said silicon layer by access through said vias.

38. The method in accordance with claim 1, wherein the sample is a micromechanical device formed by surface micromachining with a sacrificial material that is removed during the vapor phase etching and wherein the sacrificial material is doped with B, P or As prior to the vapor phase etching.

39. The method in accordance with claim 1, wherein an impedance to flow of gas reaction products is provided that is greater than 0 and less than infinite and where the impedance is an average impedance throughout a time period of the etching of the sample.

40. The method of claim 1, wherein a derivative is taken of partial pressure values of an etching product.

41. The method of claim 40, wherein an endpoint is determined when a derivative value is negative.

42. The method of claim 1, wherein the etch product that is monitored is a silicon fluoride compound.

43. The method of claim 42, wherein the etch product that is monitored is SIF, SiF2, SiF3 and/or SIF4.

44. The method of claim 1, wherein the endpoint of the etch is a point at which all of a material of a particular type of the sample has been removed.

45. The method of claim 44, wherein all or substantially all of said material capable of being exposed to the etchant gas during the etch is removed by the end point.

46. The method of claim 1, further comprising providing a low ionization potential gas along with the vapor phase etchant.

47. The method of claim 46, wherein the low ionization potential gas is selected from group 8A of the periodic table.

48. The method of claim 1, wherein the sample is a non-silicon substrate on which is a silicon sacrificial material capable of reacting with the vapor phase etchant, upon which is a non-silicon micromechanical material.

49. The method of claim 48, wherein the non-silicon substrate is a glass, quartz or sapphire substrate, and the non-silicon micromechanical material is a metal, a compound of silicon, or a compound of a metal other than silicon.

50. The method in accordance with claim 1 in which the partial pressure of said etchant gas is from about 1 mbar to about 15 mbar, and the mole ratio of said non-etchant gaseous additive to said etchant gas is from about 10:

1 to about 200;

1.

51. The method in accordance with claim 50 in which the partial pressure of said etchant gas is from about 1 mbar to about 15 mbar, and the mole ratio of said non-etchant gaseous additive to said etchant gas is from about 20:

1 to about 150;

1.

52. The method in accordance with claim 1, wherein the etchant is monitored in order to determine the end point.

53. The method in accordance with claim 52, where a partial pressure of xenon difluoride is monitored in order to determine the end point.

54. The method of claim 1, wherein a gas analyzer is attached to the chamber to allow the monitoring of the gas in or from the etching chamber.

55. The method of claim 54, wherein a residual gas analyzer is used to monitor etch products in or coming from the chamber.

56. The method of claim 54, wherein a fourier transform infrared spectrometer is used as the gas analyzer.

57. The method in accordance with claim 1, in which said non-silicon portion is a member selected form the group consisting of non-silicon metals and metal compounds.

58. The method in accordance with claim 57 in which said non-silicon portion is a member selected from the group consisting of titanium, gold, tungsten, and compounds thereof.

59. The method in accordance with claim 57 in which said non-silicon portion is gold.

60. The method in accordance with claim 1 in which said silicon portion is a polysilicon or amorphous silicon layer deposited over a substrate and said non-silicon portion is a layer of silicon nitride, said silicon nitride layer being patterned to leave vias therein for access of said gas mixture to said polysilicon or amorphous silicon layer, said exposure to said gas mixture being of sufficient duration to laterally etch away substantially all of said polysilicon or amorphous silicon layer by access through said vias.

61. The method in accordance with claim 60 in which said polysilicon or amorphous silicon layer is from about 200 nm to about 5000 nm in thickness.

62. The method in accordance with claim 60 in which said silicon nitride layer is from about 10 nm to about 500 nm in thickness.

63. The method in accordance with claim 60 in which said silicon nitride layer is from about 20 nm to about 200 nm in thickness.

64. The method in accordance with claim 1 in which said etchant gas is a halogen fluoride.

65. The method in accordance with claim 64 in which said halogen fluoride is a member selected from the group consisting of chlorine trifluoride, bromine trifluoride, and iodine pentafluoride.

66. The method in accordance with claim 64 in which said halogen fluoride is a member selected from the group consisting of chlorine trifluoride and bromine trifluoride.

67. The method in accordance with claim 64 in which said halogen fluoride is bromine trifluoride.

68. The method in accordance with claim 1 in which said etchant gas is a noble gas fluoride.

69. The method in accordance with claim 68 in which said noble gas fluoride is a member selected from the group consisting of krypton difluoride and the xenon fluorides.

70. The method in accordance with claim 68 in which said noble gas fluoride is a member selected from the group consisting of xenon difluoride, xenon tetrafluoride, and xenon hexafluoride.

71. The method in accordance with claim 68 in which said noble gas fluoride is xenon difluoride.

72. The method in accordance with claim 68 in which said noble gas fluoride is xenon difluoride and said non-etchant gaseous additive is a member selected from the group consisting of helium, neon, and mixtures one or more or helium and neon with one or more of nitrogen and argon.

73. The method in accordance with claim 68 in which said noble gas fluoride is xenon difluoride and said non-etchant gaseous additive is a member selected from the group consisting of helium and a mixture of nitrogen and helium.

74. The method of claim 1, wherein the sample is a wafer with multiple dies on the wafer, each die comprising one or more MEMS structures to be etched.

75. The method of claim 74, wherein the one or more MEMS devices are micromirrors.

76. The method of claim 75, wherein the etchable material is a silicon material disposed between a plurality of electrodes and circuitry on a substrate and a MEMS structural material held above the substrate via posts and on the etchable material prior to removal of the etchable material.

77. The method of claim 1, wherein the detected end point is indicative of all or substantially all of the material to be etched having been removed.

78. The method of claim 77, wherein the material is silicon having from 0 to 40 at % hydrogen.

79. The method of claim 78, wherein the silicon has from 0 to 25 at % hydrogen.

80. The method of claim 1, wherein a partial pressure of an etch product is monitored over time to determine an end point of the etch.

81. The method of claim 80, wherein a peak value of the partial pressure is determined.

82. The method of claim 81, wherein an endpoint of the etch is determined based on the peak value.

83. The method of claim 81, wherein as the etch proceeds, rate of change of the partial pressure of the etch product decreases over time, the monitoring of the etch product comprises monitoring rates of change of the partial pressure of the etch product, and the determining an endpoint comprises determining a point that the rate of change of the partial pressure becomes zero or negative.

84. The method of claim 1, wherein the sample is a substrate having thereon an etchable material.

85. The method of claim 84, wherein the substrate is a substrate transmissive to visible light.

86. The method of claim 84, wherein the substrate is a semiconductor substrate.

87. The method of claim 84, wherein the etchable material is sputtered silicon.

88. The method of claim 84, wherein the etchable material is PECVD or LPCVD silicon.

89. The method of claim 88, wherein the silicon comprises up to 25 at % H.

90. The method of claim 84, wherein the sample is a MEMS device wherein the MEMS device is released upon removal of the etchable material.

91. The method of claim 90, wherein the MEMS device has multiple structural layers and multiple layers of etchable material, all layers of etchable material being removed in the etch process.

92. The method of claim 90, wherein a MEMS structural material is disposed on the etchable material, and the etchable material is selectively etched relative to the structural material.

93. The method of claim 92, wherein the structural material is a silicon compound.

94. The method of claim 93, wherein the silicon compound is silicon dioxide or silicon nitride.

95. The method of claim 94, wherein the silicon compound is Si3N4 and the etchable material is amorphous silicon.

96. The method of claim 95, wherein a reflective metal layer is disposed above or below the Si3N4.

97. A method for etching a sample comprising:

providing a sample to be etched to an etching chamber;

providing a vapor phase etchant to the chamber, the vapor phase etchant being a spontaneous chemical etchant, to etch the sample, and passing unreacted vapor phase etchant and etching products out of the etching chamber during the etch, wherein the etchant is selected from the group consisting of noble gas fluorides and halogen fluorides;

wherein the etchant is mixed with a non-etchant gaseous additive;

wherein a partial pressure of said etchant gas in said gas mixture is at least about 0.1 mbar, and the molar ratio of said non-etchant gaseous additive to said etchant gas is from about 1;

1 to about 500;

1;

monitoring the vapor phase etchant and/or etching product within or coming from the etching chamber dining the etch;

determining the end point of the etch based on said monitoring;

wherein the sample comprises a silicon material that is part of a silicon portion that is etched relative to a non-silicon portion of the sample, said non-silicon portion consisting of a member selected from the group consisting of a non-silicon metal, a compound of a non-silicon metal, and a silicon-containing compound in which silicon is bonded to a non-silicon element; and

wherein both said silicon portion and said non-silicon portion are exposed to the etchant gas.

98. A method for etching a sample, comprising:

providing a sample to be etched to an etching chamber;

providing a vapor phase etchant through the chamber to etch the sample, the vapor phase etchant capable of etching the sample in a non-energized state, wherein the etchant is selected from the group consisting of noble gas fluorides and halogen fluorides;

wherein the etchant is mixed with a non-etchant gaseous additive;

wherein a partial pressure of said etchant gas in said gas mixture is at least about 0.1 mbar, and the molar ratio of said non-etchant gaseous additive to said etchant gas is from about 1;

1 to about 500;

1;

impeding the gas flow out of the etching chamber, wherein the impedance is less than infinity but greater than 0;

monitoring gas component levels within or coming from the etching chamber,

determining the end point of the etch based on the monitoring of the gas in or from the etching chamber;

wherein the sample comprises a silicon material that is part of a silicon portion that is etched relative to a non-silicon portion of the sample, said non-silicon portion consisting of a member selected from the group consisting of a non-silicon metal, a compound of a non-silicon metal, and a silicon-containing compound in which silicon is bonded to a non-silicon element; and

wherein both said silicon portion and said non-silicon portion are exposed to the etchant gas.

99. A method for etching a sample comprising:

providing a sample to be etched to an etching chamber;

providing a vapor phase etchant through the chamber to etch the sample, the vapor phase etchant capable of etching the sample in a non-energized state, wherein the etchant is selected from the group consisting of noble gas fluorides and halogen fluorides;

wherein the etchant is mixed with a non-etchant gaseous additive;

wherein a partial pressure of said etchant gas in said gas mixture is at least about 0.1 mbar, and the molar ratio of said non-etchant gaseous additive to said etchant gas is from about 1;

1 to about 500;

1;

monitoring an increase in an etch product over a period of time followed by a decrease in the etch product over a period of time;

determining the end point of the etch based on the monitoring of the gas;

wherein the sample comprises a silicon material that is part of a silicon portion that is etched relative to a non-silicon portion of the sample, said non-silicon portion consisting of a member selected from the group consisting of a non-silicon metal, a compound of a non-silicon metal, and a silicon-containing compound in which silicon is bonded to a non-silicon element; and

wherein both said silicon portion and said non-silicon portion are exposed to the etchant gas.

100. A method for etching a sample, comprising:

providing a sample to be etched to an etching chamber that has an optional recirculation loop for recirculating etchant repeatedly through the etching chamber;

providing a vapor phase etchant through the chamber to etch the sample, the vapor phase etchant capable of etching the sample in a non-energized state and being passed through the etching chamber or recirculation loop at a rate sufficient to cause a production of an etching product faster than an outflow of the etchant product from the etching chamber or recirculation loop;

monitoring the etching product within the etching chamber or recirculation loop;

determining the end point of the etch based on the monitoring of the etching product;

wherein the etchant is selected from the group consisting of noble gas fluorides and halogen fluorides;

wherein the etchant is mixed with a non-etchant gaseous additive;

wherein a partial pressure of said etchant gas in said gas mixture is at least about 0.1 mbar, and the molar ratio of said non-etchant gaseous additive to said etchant gas is from about 1;

1 to about 500;

1;

wherein the sample comprises a silicon material that is pan of a silicon portion that is etched relative to a non-silicon portion of the sample, said non-silicon portion consisting of a member selected from the group consisting of a non-silicon metal, a compound of a non-silicon metal, and a silicon-containing compound in which silicon is bonded to a non-silicon element; and

wherein both said silicon portion and said non-silicon portion are exposed to the etchant gas.