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Semiconductor device including a channel stop structure and method of manufacturing the same

  • US 7,189,620 B2
  • Filed: 05/06/2005
  • Issued: 03/13/2007
  • Est. Priority Date: 10/30/2001
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • an N-type semiconductor substrate;

    a transistor including,a first P-type impurity introduced region formed in a main surface of said semiconductor substrate and constituting a main junction together with said semiconductor substrate,an N-type impurity introduced region formed in said main surface of said semiconductor substrate and functioning as a source or an emitter of said transistor,a first trench formed in said main surface of said semiconductor substrate in a portion where said N-type impurity introduced region is formed,an insulating film formed on an inner wall of said first trench and functioning as a gate insulating film of said transistor, anda conductive film formed to fill in said first trench and functioning as a gate electrode of said transistor; and

    a channel stop structure formed in a peripheral portion of said semiconductor substrate,wherein said channel stop structure includes a second trench formed in said main surface of said semiconductor substrate, and a second P-type impurity introduced region formed in said main surface of said semiconductor substrate.

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