Electroless plating of metal caps for chalcogenide-based memory devices
First Claim
1. A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device comprising, forming a layer of a first conductive material over a substrate, depositing an insulating layer over said first conductive material and said substrate, forming an opening in said insulating layer to expose at least a portion of said first conductive material, depositing a second conductive material over said insulating layer and within said opening, removing portions of said second conductive material to form a conductive area within said opening, recessing said conductive area within said opening to a level below an upper surface of said insulating layer, forming a cap of a third conductive material over the recessed conductive area within said opening, said third conductive material selected from the group consisting of cobalt, silver, gold, copper, nickel, palladium, platinum, and alloys thereof, depositing a stack of a chalcogenide based memory cell material over said cap, and depositing a conductive material over said chalcogenide stack.
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Accused Products
Abstract
A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device is provided and includes, forming a layer of a first conductive material over a substrate, depositing an insulating layer over the first conductive material and the substrate, forming an opening in the insulating layer to expose at least a portion of the first conductive material, depositing a second conductive material over the insulating layer and within the opening, removing portions of the second conductive material to form a conductive area within the opening, recessing the conductive area within the opening to a level below an upper surface of the insulating layer, forming a cap of a third conductive material over the recessed conductive area within the opening, the third conductive material selected from the group consisting of cobalt, silver, gold, copper, nickel, palladium, platinum, and alloys thereof, depositing a stack of a chalcogenide based memory cell material over the cap, and depositing a conductive material over the chalcogenide stack.
41 Citations
60 Claims
- 1. A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device comprising, forming a layer of a first conductive material over a substrate, depositing an insulating layer over said first conductive material and said substrate, forming an opening in said insulating layer to expose at least a portion of said first conductive material, depositing a second conductive material over said insulating layer and within said opening, removing portions of said second conductive material to form a conductive area within said opening, recessing said conductive area within said opening to a level below an upper surface of said insulating layer, forming a cap of a third conductive material over the recessed conductive area within said opening, said third conductive material selected from the group consisting of cobalt, silver, gold, copper, nickel, palladium, platinum, and alloys thereof, depositing a stack of a chalcogenide based memory cell material over said cap, and depositing a conductive material over said chalcogenide stack.
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18. A method of funning a metal cap over a conductive interconnect in a chalcogenide-based memory device comprising, providing an insulating layer over a substrate, said insulating layer having an opening therein, said opening exposing at least a portion of a first conductive material on said substrate, depositing a second conductive material over said insulating layer and within said opening, removing portions of said second conductive material to form a conductive area within said opening, recessing said conductive area within said opening to a level below an upper surface of said insulating layer, forming a cap of a third conductive material over the recessed conductive area within said opening, said third conductive material selected from the group consisting of cobalt, silver, gold, copper, nickel, palladium, platinum, and alloys thereof, depositing a stack of a chalcogenide based memory cell material over said cap, and depositing a conductive material over said chalcogenide stark.
- 19. A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device comprising, providing an insulating layer over a substrate, said insulating layer having an opening therein, said opening exposing at least a portion of a first conductive material on said substrate, depositing a second conductive material over said insulating layer and within said opening, removing portions of said second conductive material to form a conductive area within said opening, recessing said conductive area within said opening to a level below an upper surface of said insulating layer, forming a cap of a cobalt metal over said recessed conductive area, depositing a stack of a chalcogenide based memory cell material over said cap, and depositing a conductive material over said chalcogenide stack.
- 23. A method of forming a metal cap over a tungsten interconnect in a chalcogenide-based memory device comprising, forming a tungsten interconnect recessed within an opening in an insulating layer, and forming a metal cap over said recessed tungsten layer by electroless deposition of a metal selected from the group consisting of cobalt, silver, gold, copper, nickel, palladium, platinum, and alloys thereof.
- 33. A method of forming a conductive metal interconnect for a semiconductor circuit comprising, providing a semiconductor structure having semiconductor devices formed thereon, forming an insulating layer over said semiconductor structure, forming a trench in said insulating layer down to said semiconductor structure exposing at least a portion of said semiconductor devices, substantially filling said trench wit tungsten, recessing said tungsten to a level below the upper surface of said insulating layer, and electrolessly depositing a metal cap over the recessed tungsten, said metal cap comprising a metal selected from the group consisting of cobalt, silver, gold, copper, nickel, palladium, platinum, and alloys thereof, depositing a stack of a chalcogenide based memory cell material over said cap, and depositing a conductive material over said chalcogenide stack.
- 43. A conductive interconnect for a chalcogenide-based memory device comprising, an insulating layer having an opening therein on a semiconductor substrate, a recessed tungsten layer in said opening, an electrolessly deposited metal cap on said tungsten layer, said metal cap comprising a metal selected from the group consisting of cobalt, silver, gold, copper, nickel, palladium, platinum, and alloys thereof, a stack of a chalcogenide based memory cell material over said cap, and a conductive material over said chalcogenide stack.
- 52. A processor-based system comprising a processor, and a chalcogenide-based memory device coupled to said processor, said chalcogenide-based memory device comprising an insulating layer having an opening therein on a semiconductor substrate, a recessed tungsten layer in said opening, an electrolessly deposited metal cap on said tungsten layer, said metal cap comprising a metal selected from the group consisting of cobalt, silver, gold, copper, nickel, palladium, platinum, and alloys thereof, a stack of a chalcogenide based memory cell material over said cap, and a conductive material over said chalcogenide stack.
Specification