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Light emitting device

  • US 7,190,004 B2
  • Filed: 12/02/2004
  • Issued: 03/13/2007
  • Est. Priority Date: 12/03/2003
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a nitride semiconductor substrate with a resistivity of 0.5 Ω

    ·

    cm or less;

    an n-type nitride semiconductor layer at a first main surface side of said nitride semiconductor substrate and a p-type nitride semiconductor layer placed more distantly from said nitride semiconductor substrate than said n-type nitride semiconductor layer at said first main surface side; and

    a light emitting layer placed between said n-type nitride semiconductor layer and said p-type nitride semiconductor layer at said first main surface side, whereinone of said nitride semiconductor substrate and said p-type nitride semiconductor layer is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side, andsaid substrate is n-typed with oxygen-doping, and said substrate has an oxygen concentration in the range from 1E17 to 2E19 oxygen atoms/cm3 and a thickness of 100 μ

    m to 200 μ

    m.

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