Capacitor structure

• US 7,190,016 B2
• Filed: 10/05/2005
• Issued: 03/13/2007
• Est. Priority Date: 10/08/2004
• Status: Expired due to Fees

• Current Assignee: Rohm and Haas Electronic Materials LLC (DuPont de Nemours, Inc.)
• Original Assignee: Rohm and Haas Electronic Materials LLC (DuPont de Nemours, Inc.)
• Inventors: Cahalen, John P., Hariharan, Rajan, Rzeznik, Maria Anna, Schemenaur, John E.
• Primary Examiner(s): Nhu; David
• Application Number:
  US11/243,890
• Publication Number:
  US 20060079050A1
• Time in Patent Office: 524 Days
• Field of Search: 257/296, 257/249, 257/288, 257/301, 257/306, 257/310, 257/315, 257/761, 257/762, 257/763, 438/240, 438/238, 438/381
• US Class Current: 257/310
• CPC Class Codes: H01G 4/005 Electrodes
• CPC Class Codes: H01L 28/75 comprising two or more layers, e.g. comprising a barrier layer and a metal layer
• CPC Class Codes: H05K 1/162 incorporating printed capacitors
• CPC Class Codes: H05K 2201/0355 Metal foils
• CPC Class Codes: H05K 2201/09509 Blind vias, i.e. vias having one side closed
• CPC Class Codes: H05K 2203/0723 Electroplating, e.g. finish plating
• CPC Class Codes: H05K 3/384 by plating

Abstract

Structures including a capacitor dielectric material disposed on the surface of an electrode suitable for use in forming capacitors are disclosed. Methods of forming such structures are also disclosed.

Claims

1. A structure comprising an electrode having first and second surfaces and a capacitor dielectric material disposed on the first surface of the electrode, wherein the first surface of the electrode has an Ra value of ≦

200 nm, an Rz(din) value of ≦

2000 nm, and a W value of ≦

250 nm.

2. The structure of claim 1 wherein the electrode comprises a conductive layer and a barrier layer.

3. The structure of claim 1 wherein the capacitor dielectric material has a dielectric constant ≧

10.

4. A capacitor comprising the structure of claim 1 and further comprising a second electrode disposed on the capacitor dielectric material.

5. A structure comprising an electrode having first and second surfaces, a barrier layer disposed on the first surface of the electrode and a capacitor dielectric material disposed on the barrier layer, wherein the barrier layer is an electrodeposited nickel layer comprising <

3 atomic % of copper.

6. The structure of claim 5 wherein the capacitor dielectric material has a dielectric constant ≧

10.

7. A capacitor comprising the structure of claim 5 and further comprising a second electrode disposed on the capacitor dielectric material.

8. A structure comprising an electrode comprising a copper conductive layer having first and second surfaces, a barrier layer having a thickness of 0.5 to 2 μ

m disposed on each of the first and second surfaces of the copper conductive layer and a capacitor dielectric material disposed on the barrier layer disposed on the first surface of the electrode, wherein each barrier layer is an electrodeposited nickel layer comprising <

3 atomic % of copper, and wherein the capacitor dielectric material is chosen from ceramics, metal oxides, polymeric materials and combinations thereof.

9. The structure of claim 8 wherein the first surface has an Ra value of ≦

200 nm, an Rz(din) value of ≦

2000 nm, and a W value of ≦

250 nm.

10. A method of forming an electrode structure comprising the steps of providing a metal foil having a first surface, contacting the metal foil with a nickel electroplating bath and applying sufficient anodic potential to deposit a layer of nickel on the first surface of the metal foil wherein the nickel-plated first surface has an Ra value of ≦

200 nm, an Rz(din) value of≦

2000 nm, and a W value of ≦

250 nm.