Shared-current electronic systems with precise proportioning

• US 7,190,229 B1
• Filed: 01/03/2005
• Issued: 03/13/2007
• Est. Priority Date: 08/20/2003
• Status: Expired due to Fees

• Current Assignee: Emhiser Research Inc
• Original Assignee: Emhiser Research Inc
• Inventors: Lautzenhiser, Barry Arthur, Lautzenhiser, Lloyd Lynn
• Primary Examiner(s): Choe; Henry
• Application Number:
  US11/028,107
• Time in Patent Office: 799 Days
• Field of Search: 330/295, 330/124.R, 330/84, 330/126
• US Class Current: 330/295
• CPC Class Codes: H03F 2200/192 A hybrid coupler being used at the input of an amplifier circuit
• CPC Class Codes: H03F 2200/204 A hybrid coupler being used at the output of an amplifier circuit
• CPC Class Codes: H03F 2200/333 A frequency modulator or demodulator being used in the amplifier circuit
• CPC Class Codes: H03F 2203/21106 An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
• CPC Class Codes: H03F 2203/21142 Output signals of a plurality of power amplifiers are parallel combined to a common output
• CPC Class Codes: H03F 3/211 using a combination of several amplifiers H03F3/60 takes precedence
• CPC Class Codes: H03F 3/602 Combinations of several amplifiers

Abstract

Shared-current electronic systems (120, 130, 140, 150, 160, 170, 180, 190, and 200) include two or more solid-state electronic devices, such as a solid-state amplifying device (Q1), a baseband processor (110), and a multiplier/up-converter (112), that are connected in dc series or dc series-parallel, that may be connected in rf series, and that either fixedly or variably share percentages of a dc source voltage. Various embodiments produce separate rf outputs, variably shift the phase of a single rf output, variably shift rf power between/among rf outputs, or produce a frequency-compressed modulation. The apparatus includes means (122, 162, 162A, and /or 162B) for precisely proportioning percentages of the regulated dc source voltage to the dc series-connected electronic devices irrespective of production variations in operating parameters of the electronic devices and/or drift of the electronic devices.

Claims

1. Electronic apparatus (120, 130, 140, 150, 160, 170, 180, 190, or 200) which comprises:

a solid-state electronic device (Q1, Q2, Q5, or Q9) that includes higher and lower dc voltage terminals;

an other electronic device (Q2, Q7, Q8, Q9, Q10, Q12, 92, 110, or 112) that includes higher and lower dc voltage terminals;

means, comprising means (L2) for connecting said lower dc voltage terminal of one of said electronic devices to said higher dc voltage terminal of an other of said electronic devices, for connecting said electronic devices in dc series between a dc source voltage and an electrical ground;

means, comprising a capacitor (C5, C6, C9, or C19) that is connected between said lower dc voltage terminal of said one electronic device and said electrical ground, for rf decoupling said dc series-connected electronic devices; and

means (122, 122A, 162, 162A, or 162B), being connected to a proportioning voltage and to said one electronic device, for precisely proportioning a preselected percentage of said dc source voltage to said one electronic devices irrespective of production variations of operating parameters in one or both of said electronic devices or drift of said operating parameters in one or both of said electronic devices.

2. Apparatus (120, 130, 140, 150, 160, 170, 180, 190, or 200) as claimed in claim 1 in which said other electronic device comprises a second solid-state electronic device (Q1, Q2, Q5, Q6, Q7, Q8, Q9, Q10, Q11, or Q12).

3. Apparatus (180, 190, or 200) as claimed in claim 1 in which said other electronic device comprises a processing electronic device (92, 110, or 112).

4. Apparatus (190) as claimed in claim 1 in which said other electronic device comprises a baseband processor (110).

5. Apparatus (190) as claimed in claim 1 in which said other electronic device comprises a multiplier/up-converter (112).

6. Apparatus (120, 130, 140, 150, 160, 170, 180, 190, or 200) as claimed in claim 1 in which said means for precisely proportioning comprises means (VD3, 54, or 72) for precisely proportioning varying percentages of said dc source voltage to said one electronic device.

7. Apparatus (120, 130, 140, 150, 160, 170, 180, 190, or 200) as claimed in claim 1 in which;

said dc source voltage comprises a regulated dc source voltage; and

said means for precisely proportioning comprises means (VD3, 54, or 72) for precisely proportioning varying and inverse percentages of said dc source voltage to respective ones of said electronic devices.

18. Apparatus (120, 130, 140, 150, 160, 170, 180, 190, or 200) as claimed in claim 1 in which said means for precisely proportioning, and said connection thereof to said proportioning voltage and to said one electronic device, comprises an operational amplifier (OP2 or OP3) that is connected to said proportioning voltage, that is connected to said lower dc voltage terminal of said one processing electronic device (Q1, Q2, Q5, Q6, Q7, Q8, Q9, Q10, Q11, Q12, 92, 110, or 112), and that is connected to a control terminal of said one solid-state electronic device.

19. Apparatus (120, 130, 140, 150, 180, 190, or 200) as claimed in claim 18 in which said proportioning voltage comprises a selected percentage of said dc source voltage.

20. Apparatus (120, 130, 140, 150, 180, 190, or 200) as claimed in claim 18 in which said proportioning voltage comprises a variable percentage of said dc source voltage.

21. Apparatus (120, 130, 140, 150, 180, 190, or 200) as claimed in claim 18 in which said apparatus comprises a voltage divider (VD3) that is connected to said dc source voltage and to said electrical ground;

and

said connection of said means for precisely proportioning to said proportioning voltage comprises connection of said means (122 or 122A) for precisely proportioning to said voltage divider.

22. Apparatus (120, 130, 140, 150, 180, 190, or 200) as claimed in claim 18 in which:

said apparatus comprises a voltage divider (VD3) that includes a potentiometer (124 or 134) that is connected to said dc source voltage and to said electrical ground; and

said connection of said means for precisely proportioning to said proportioning voltage comprises connection of said means (122 or 122A) for precisely proportioning to said potentiometer.

23. Apparatus (160 or 170) as claimed in claim 18 in which:

said apparatus comprises a proportioning control (54 or 72) that produces a proportioning voltage (V_P, V_P1, V_P2, or V_P3); and

said connection of said means for precisely proportioning to said proportioning voltage comprises connection of said means for precisely proportioning to said proportioning voltage.

24. Apparatus (170 or 200) as claimed in claim 1 in which said apparatus further comprises:

a third electronic device (Q9, Q10, 92, 110, or 112) that is interposed intermediate of said other electronic device (Q2 or Q9) and said electrical ground, and that is connected in dc series between said other electronic device and said electrical ground; and

means (122A, 162A, or 162B), being connected to a second proportioning voltage and to said other electronic device, for precisely proportioning preselected percentage of said dc source voltage to said other electronic device irrespective of production variations of operating parameters or drift of said operating parameters in any of said electronic devices.

8. A method which comprises:

a) connecting a first electronic device and a second electronic device in dc series between a dc source voltage and an electrical ground;

b) rf decoupling said electronic devices; and

c) precisely proportioning preselected percentage of said dc source voltage to one of said electronic devices irrespective of production variations of operating parameters in one or both of said electronic devices.

9. A method as claimed in claim 8 in which said step of precisely proportioning comprises precisely proportioning varying percentages of said dc source voltage to said one electronic device.

25. A method as claimed in claim 8 in which said method further comprises connecting said electronic devices in rf series.

26. A method as claimed in claim 8 in which said method further comprises connecting a third electronic device in dc parallel with one of said electronic devices.

27. A method as claimed in claim 8 in which said method further comprises:

a) connecting a third electronic device in dc parallel with one of said electronic devices; and

b) connecting two of said electronic devices in rf series.

28. A method as claimed in claim 8 in which said method further comprises:

a) splitting an rf input into two rf signals; and

b) separately amplifying said rf signals, in respective ones of said electronic devices, into two separate rf outputs.

29. A method as claimed in claim 28 in which said method still further comprises combining said separately-amplified rf signals into a single rf output.

30. A method as claimed in claim 28 in which:

a) said splitting step comprises splitting said rf input into in-phase and quadrature rf signals;

b) said method further comprises combining said separately-amplified rf signals into a single rf output; and

c) said method still further comprises phase shifting said rf output.

31. A method as claimed in claim 28 in which said method still further comprises selectively proportioning a total rf output between said separate rf outputs.

32. A method as claimed in claim 28 in which said method still further comprises selectively switching a total rf output between said separate rf outputs.

33. A method as claimed in claim 8 in which said method further comprises:

a) connecting two additional electronic devices in dc series with said solid-state electronic device and said other electronic device;

b) splitting an rf input into in-phase, 90 degree, 180 degree, and 270 degree rf signals; and

c) separately amplifying said split rf signals, in respective ones of said electronic devices, into four separate rf outputs.

34. A method as claimed in claim 33 in which said method further comprises:

a) combining said separately-amplified rf signals into a single rf output; and

b) selectively phase-shifting said combined rf output.

35. A method as claimed in claim 33 in which said method further comprises selectively proportioning percentages of a total rf power to selected ones of said rf outputs.

36. A method as claimed in claim 33 in which said method further comprises selectively switching a total rf power to selected ones of said rf outputs.

37. A method as claimed in claim 8 in which said method further comprises:

a) increasing current flow through one of said electronic devices without increasing current flow through both of said electronic devices; and

b) said increasing step comprises shunting.

42. A method as claimed in claim 8 in which said method further comprises:

a) interposing a third solid-state device in dc series with said electronic devices; and

b) precisely proportioning an other selected percentage of said dc source voltage to an other of said electronic devices irrespective of production variations of operating parameters in any of said electronic devices.

10. Electronic apparatus (180, 190, or 200) which comprises:

a processing electronic device (92, 110, or 112) having higher and lower dc voltage terminals;

a solid-state electronic device (Q1 or Q2) having higher and lower dc voltage terminals;

means, comprising means (L2) for connecting said lower dc voltage terminal of one of said devices to said higher dc voltage terminal of an other of said devices, for connecting said devices in dc series between a dc source voltage and an electrical ground; and

means (122 or 122A), being connected to a proportioning voltage and to said one electronic device, for precisely proportioning a preselected percentage of said dc source voltage to said one electronic device irrespective of production variations of operating parameters in one or both of said electronic devices or drift of said operating parameters in one or both of said electronic devices.

11. Apparatus (190) as claimed in claim 10 in which said processing electronic device comprises a baseband processor (110).

12. Apparatus (190) as claimed in claim 10 in which:

said apparatus further comprises a second electronic device (112, Q11, or Q12); and

said processing electronic device (92, 110, or 112) and said second electronic device are connected in dc parallel and rf series.

13. Apparatus (190) as claimed in claim 10 in which said processing electronic device comprises a baseband processor (110);

and

said apparatus comprises a third electronic device (112, Q11, or Q12), that is interposed, in rf series, between said processing electronic device and said solid-state device (Q1).

38. Apparatus (180, 190, or 200) as claimed in claim 10 in which said means for precisely proportioning, and said connection thereof to said proportioning voltage and to said one electronic device, comprises an operational amplifier (OP2 or OP3) that is connected to said proportioning voltage, that is connected to said lower dc voltage terminal of said one processing electronic device (Q1, Q2, 92, 110, or 112), and that is connected to a control terminal of said one solid-state electronic device.

39. Apparatus (180, 190, or 200) as claimed in claim 38 in which said proportioning voltage comprises a variable percentage of said dc source voltage.

40. Apparatus (180, 190, or 200) as claimed in claim 38 in which said apparatus comprises a voltage divider (VD3) that is connected to said dc source voltage and to said electrical ground;

and

said connection of said means for precisely proportioning to said proportioning voltage comprises connection of said means (122 or 122A) for precisely proportioning to said voltage divider.

43. Apparatus (170 or 200) as claimed in claim 10 in which said apparatus further comprises:

a third electronic device (Q2 or Q9) that is interposed in dc series between said solid-state electronic device (Q1 or Q2) and said processing electronic device (92, 110, or 112); and

means (122A, 162A, or 162B), being connected to a second proportioning voltage and to said third electronic device, for precisely proportioning a preselected percentage of said dc source voltage to said third electronic device irrespective of production variations of operating parameters or drift of said operating parameters in any of said electronic devices.

14. A method which comprises:

a) rf series connecting a processing electronic device to a first solid-state electronic device;

b) dc series connecting said first solid-state electronic device and said processing electronic device with a dc source voltage and an electrical ground;

c) decoupling said electronic devices; and

d) precisely proportioning s selected percentage of said dc source voltage to one of said electronic devices irrespective of production variations in operating parameters of either or both of said electronic devices.

15. A method as claimed in claim 14 in which said rf series connecting step comprises connecting an other solid-state electronic device in rf series between said processing electronic device and said first solid-state electronic device.

16. A method as claimed in claim 14 in which:

a) said rf series connecting step comprises connecting an other solid-state electronic device in rf series between said processing electronic device and said first solid-state electronic device; and

b) said method further comprises connecting said processing electronic device and said other solid-state electronic device in dc parallel.

41. A method as claimed in claim 14 in which said method further comprises:

a) increasing current flow through one of said electronic devices without increasing current flow through both of said electronic devices; and

b) said increasing step comprises shunting.

17. A method which comprises:

a) connecting first and second electronic devices in dc parallel;

b) connecting said first and second parallel-connected electronic devices and a third electronic device in dc series between a dc source voltage and an electrical ground;

c) connecting said first, second, and third electronic devices in rf series; and

d) precisely proportioning a selected percentage of said dc source voltage to one of said electronic devices irrespective of production variations in operating parameters of any of said electronic devices and/or drift of any of said electronic devices.

44. A method as claimed in claim 17 in which said step of connecting first and second electronic devices in dc parallel comprises connecting a baseband processor and a multiplier/up-converter in dc parallel.