Display device

• US 7,190,428 B2
• Filed: 07/25/2005
• Issued: 03/13/2007
• Est. Priority Date: 03/26/1997
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Nguyen; Dung
• Application Number:
  US11/187,809
• Publication Number:
  US 20050264740A1
• Time in Patent Office: 596 Days
• Field of Search: 349 42- 43, 349/138
• US Class Current: 349/138
• CPC Class Codes: G02F 1/133334 Electromagnetic shields
• CPC Class Codes: G02F 1/133385 with cooling means, e.g. fans
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence

Abstract

There is disclosed a structure for radiating heat generated by TFTs in a liquid crystal panel. A DLC film 125 is provided on a resin interlayer film 123 disposed on the TFTs 105, 109, and 113. The DLC film 125 can be easily formed on the resin film, and has high heat conductivity, so that the film can be made to function as a heat radiating layer.

Claims

1. A display device comprising:

a substrate;

a thin film transistor formed over the substrate;

a first insulating film formed over the thin film transistor wherein the first insulating film has a first contact hole;

an electrode formed over the first insulating film wherein the electrode contacts one of a source region or a drain region of the thin film transistor through the first contact hole of the first insulating film;

a second insulating film formed over the electrode wherein the second insulating film has a second contact hole;

a third insulating film comprising an organic resin and covering an inside of the second contact hole wherein the third insulating film has a third contact hole;

a pixel electrode contacting the electrode through the third contact hole of the third insulating film; and

a light emitting layer formed over the pixel electrode.

2. The display device according to claim 1, wherein the organic resin is selected from the group consisting of polyimide, polyimideamide, polyamide, acryl and epoxy.

3. The display device according to claim 1, wherein the thin film transistor is a top-gate type thin film transistor.

4. The display device according to claim 1, further comprising:

a fourth insulating film comprising an organic resin between the first insulating film and the light emitting layer.

5. The display device according to claim 1, wherein the electrode comprises a titanium film, an aluminum film and a titanium film.

6. The display device according to claim 1, wherein the display device is incorporated into an electric apparatus selected from the group consisting of a portable information terminal, a head mount display, a portable telephone, a video camera and a projector.

7. The display device according to claim 1, wherein the thin film transistor is a bottom-gate type thin film transistor.

8. The display device according to claim 1, wherein the second contact hole and the third contact hole overlap the first contact hole.

9. The display device according to claim 1, wherein the second insulating film is a diamond-like carbon film.

10. A display device comprising:

a substrate;

a thin film transistor formed over the substrate;

a first insulating film formed over the thin film transistor wherein the first insulating film has a first contact hole and comprises silicon oxide;

an electrode formed over the first insulating film wherein the electrode contacts one of a source region or a drain region of the thin film transistor through the first contact hole of the first insulating film;

a second insulating film formed over the electrode wherein the second insulating film has a second contact hole;

a third insulating film comprising an organic resin and covering an inside of the second contact hole wherein the third insulating film has a third contact hole;

a pixel electrode contacting the electrode through the third contact hole of the third insulating film; and

a light emitting layer formed over the pixel electrode.

11. The display device according to claim 10, wherein the organic resin is selected from the group consisting of polyimide, polyimideamide, polyamide, acryl and epoxy.

12. The display device according to claim 10, wherein the thin film transistor is a top-gate type thin film transistor.

13. The display device according to claim 10, further comprising:

a fourth insulating film comprising an organic resin between the first insulating film and the light emitting layer.

14. The display device according to claim 10, wherein the electrode comprises a titanium film, an aluminum film and a titanium film.

15. The display device according to claim 10, wherein the display device is incorporated into an electric apparatus selected from the group consisting of a portable information terminal, a head mount display, a portable telephone, a video camera and a projector.

16. The display device according to claim 10, wherein the thin film transistor is a bottom-gate type thin film transistor.

17. The display device according to claim 10, wherein the second contact hole and the third contact hole overlap the first contact hole.

18. The display device according to claim 10, wherein the second insulating film is a diamond-like carbon film.

19. A semiconductor device comprising:

a substrate;

a thin film transistor formed over the substrate, the thin film transistor comprising at least a semiconductor film and a gate electrode adjacent to the semiconductor film with a gate insulating film interposed therebetween;

an electrode formed over the thin film transistor wherein the electrode contacts one of a source region or a drain region of the semiconductor film;

a first insulating film formed over the electrode wherein the first insulating film has a first contact hole;

a second insulating film comprising an organic resin formed over the first insulating film wherein the second insulating film has a second contact hole and covers an inside of the first contact hole; and

a pixel electrode contacting the electrode through the second contact hole of the second insulating film.

20. The semiconductor device according to claim 19, wherein the semiconductor device is a liquid crystal display device.

21. The semiconductor device according to claim 19, wherein the semiconductor device is an EL display device.

22. The semiconductor device according to claim 19, wherein the organic resin is selected from the group consisting of polyimide, polyimideamide, polyamide, acryl and epoxy.

23. The semiconductor device according to claim 19, wherein the thin film transistor is a top-gate type thin film transistor.

24. The semiconductor device according to claim 19, wherein the thin film transistor is a bottom-gate type thin film transistor.

25. The semiconductor device according to claim 19, wherein the electrode comprises a titanium film, an aluminum film and a titanium film.

26. The semiconductor device according to claim 19, wherein the semiconductor device is incorporated into an electric apparatus selected from the group consisting of a portable information terminal, a head mount display, a portable telephone, a video camera and a projector.

27. The semiconductor device according to claim 19, wherein the first insulating film is a diamond-like carbon film.

28. A semiconductor device comprising:

a substrate;

a thin film transistor formed over the substrate, the thin film transistor comprising at least a semiconductor film and a gate electrode adjacent to the semiconductor film with a gate insulating film interposed therebetween;

an electrode formed over the thin film transistor;

a first insulating film formed over the electrode wherein the first insulating film has a first contact hole;

a second insulating film comprising an organic resin formed over the first insulating film wherein the second insulating film has a second contact hole and covers an inside of the first contact hole; and

a pixel electrode contacting the electrode through the second contact hole of the second insulating film.

29. The semiconductor device according to claim 28, wherein the semiconductor device is a liquid crystal display device.

30. The semiconductor device according to claim 28, wherein the semiconductor device is an EL display device.

31. The semiconductor device according to claim 28, wherein the organic resin is selected from the group consisting of polyimide, polyimideamide, polyamide, acryl and epoxy.

32. The semiconductor device according to claim 28, wherein the thin film transistor is a top-gate type thin film transistor.

33. The semiconductor device according to claim 28, wherein the thin film transistor is a bottom-gate type thin film transistor.

34. The semiconductor device according to claim 28, wherein the electrode comprises a titanium film, an aluminum film and a titanium film.

35. The semiconductor device according to claim 28, wherein the semiconductor device is incorporated into an electric apparatus selected from the group consisting of a portable information terminal, a head mount display, a portable telephone, a video camera and a projector.

36. The semiconductor device according to claim 28, wherein the first insulating film is a diamond-like carbon film.

37. A semiconductor device comprising:

a substrate;

a first electrode formed over the substrate;

a first insulating film formed over the first electrode wherein the first insulating film has a first contact hole;

a second insulating film comprising an organic resin formed over the first insulating film wherein the second insulating film has a second contact hole and covers an inside of the first contact hole; and

a second electrode formed over the second insulating film wherein the second electrode contacts the first electrode through the second contact hole of the second insulating film.

38. The semiconductor device according to claim 37, wherein the semiconductor device is a liquid crystal display device.

39. The semiconductor device according to claim 37, wherein the semiconductor device is an EL display device.

40. The semiconductor device according to claim 37, wherein the organic resin is selected from the group consisting of polyimide, polyimideamide, polyamide, acryl and epoxy.

41. The semiconductor device according to claim 37, wherein the first electrode comprises a titanium film, an aluminum film and a titanium film.

42. The semiconductor device according to claim 37, wherein the semiconductor device is incorporated into an electric apparatus selected from the group consisting of a portable information terminal, a head mount display, a portable telephone, a video camera and a projector.

43. The semiconductor device according to claim 37, wherein the first insulating film is a diamond-like carbon film.

44. The semiconductor device according to claim 37, wherein the second electrode is a pixel electrode.