Process for fabrication of high reflectors by reversal of layer sequence and application thereof

• US 7,190,524 B2
• Filed: 08/12/2004
• Issued: 03/13/2007
• Est. Priority Date: 08/12/2003
• Status: Expired due to Fees

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Wada, Kazumi, Akiyama, Shoji, Kaertner, Franz X., Grawert, Felix Jan
• Primary Examiner(s): AMARI, ALESSANDRO V
• Application Number:
  US10/917,209
• Publication Number:
  US 20050063061A1
• Time in Patent Office: 943 Days
• Field of Search: 359/584, 359/586, 359/587, 359/588, 427/163.2, 427/165, 427/166, 427/167
• US Class Current: 359/584
• CPC Class Codes: G02B 5/0833 comprising inorganic materials only

Abstract

An optical reflector includes an optical reflective element that comprises alternating layers of high and low index layers. A new substrate is bonded on the optical reflective element. The sequence of layers in the reflective element is reversed in order such that the layers grown first with lowest surface roughness are exposed to the highest electric field strength, and the layer grown last, of highest roughness, are buried deep in the multilayer stack.

Claims

1. An optical reflector comprising:

an optical reflective element that includes alternating layers of high and low index layers are formed on a first semiconductor substrate; and

a new substrate that is bonded on said optical reflective element, wherein

the sequence of layers in the reflective element is reversed in order such that the layers grown first with lowest surface roughness are exposed to the highest electric field strength, and the layer grown last, of highest roughness, is buried deep in the multilayer stack, and said first semiconductor substrate that is adjacent to the first layer of lowest surface roughness is removed.

2. The optical reflector of claim 1, wherein said high index layers comprise of Si, doped Si, Si-compounds such as Si(x)Ge(1−

x), Ge, or other heat or electrically conductive materials.

3. The optical reflector of claim 1, wherein said low index layers comprise of SiO2, Si(x)O(y), SiN, ITO, or other heat or electrically conductive materials.

4. The optical reflector of claim 1 further comprising a protective layer that comprises SiN.

5. The method of claim 1, wherein said high index layers comprise of Si, doped Si, Si-compounds such as Si(x)Ge(1−

x), Ge, or other heat or electrically conductive materials.

6. An optical device comprising:

an optical reflective element that includes alternating layers of high and low index layers formed on a first semiconductor substrate; and

a new substrate that is bonded on said optical reflective element, wherein

the sequence of layers in the reflective element is reversed in order such that the layers grown first with lowest surface roughness are exposed to the highest electric field strength, and the layer grown last, of highest roughness, is buried deep in the multilayer stack, and said first semiconductor substrate that is adjacent to the first layer of lowest surface roughness is removed.

7. The optical reflector of claim 6, wherein said high index layers comprise of Si, doped Si, Si-compounds such as Si(x)Ge(1−

x), Ge, or other heat or electrically conductive materials.

8. The optical reflector of claim 6, wherein said low index layers comprise of SiO2, Si(x)O(y), SiN, ITO, or other heat or electrically conductive materials.

9. The optical reflector of claim 6 further comprising a protective layer that comprises SiN.

10. The optical device of claim 6, wherein said device is configured to be an optical beam splitter.

11. The optical device of claim 6, wherein said device is configured to be an output coupler.