Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
First Claim
1. A magnetic element, comprising:
- a resettable layer having a first magnetization that is set in a selected direction by at least one magnetic field, each magnetic field being generated externally to the resettable layer;
a storage layer having at least one magnetic easy axis and having a second magnetization that changes direction based on a spin-transfer effect when a write current passes through the magnetic element; and
a spacing layer formed between the resettable layer and the storage layer.
2 Assignments
0 Petitions
Accused Products
Abstract
A magnetic element for a high-density memory array includes a resettable layer and a storage layer. The resettable layer has a magnetization that is set in a selected direction by at least one externally generated magnetic field. The storage layer has at least one magnetic easy axis and a magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element. An alternative embodiment of the magnetic element includes an additional multilayer structure formed from a tunneling barrier layer, a pinned magnetic layer and an antiferromagnetic layer that pins the magnetization of the pinned layer in a predetermined direction. Another alternative embodiment of the magnetic element includes an additional multilayer structure that is formed from a tunneling barrier layer and a second resettable layer having a magnetic moment that is different from the magnetic moment of the resettable layer of the basic embodiment.
-
Citations
63 Claims
-
1. A magnetic element, comprising:
-
a resettable layer having a first magnetization that is set in a selected direction by at least one magnetic field, each magnetic field being generated externally to the resettable layer; a storage layer having at least one magnetic easy axis and having a second magnetization that changes direction based on a spin-transfer effect when a write current passes through the magnetic element; and a spacing layer formed between the resettable layer and the storage layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
-
-
27. A magnetic memory having a plurality of magnetic cells, at least one magnetic cell including a magnetic element comprising:
-
a resettable layer having a first magnetization that is set in a selected direction by at least one magnetic field, each magnetic field being generated externally to the resettable layer; a storage layer having at least one magnetic easy axis and having a second magnetization that changes direction based on a spin-transfer effect when a write current passes through the magnetic element; and a spacing layer formed between the resettable layer and the storage layer. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52)
-
-
53. A method for forming a magnetic element, the method comprising steps of:
-
forming a resettable layer having a first magnetization that is set in a selected direction by at least one magnetic field, each magnetic field being generated externally to the resettable layer; forming a storage layer having at least one magnetic easy axis and having a second magnetization that changes direction based on a spin-transfer effect when a write current passes through the magnetic element; and forming a spacing layer between the resettable layer and the storage layer. - View Dependent Claims (54, 55, 56, 57, 58, 59, 60, 61, 62, 63)
-
Specification