Capacitive pressure sensor
First Claim
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1. A capacitive pressure sensor comprising:
- evaluation circuits for measuring an applied pressure;
a capacitive electrode;
a counter electrode; and
first and second silicon on insulator (SOI) wafers lying opposite of each other and being joined to each other in a vacuum-tight manner, a recess being formed between the first and second wafers, the first wafer supporting exclusively the evaluation circuits and the capacitive electrode, the second wafer having the recess formed by surface micromechanics processes, in which the counter electrode to the capacitive electrode of the first wafer is situated, the second wafer forming a cover for the first wafer.
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Abstract
A capacitive pressure sensor made up of two silicon on insulator (SOI) wafers lying opposite of each other and joined to each other in a vacuum-tight manner, a recess being formed between the two wafers. The first wafer exclusively supports the evaluation circuits required for measuring the applied pressure and a capacitive electrode, and the second wafer has a recess formed by surface micromechanics processes, in which the counter electrode to the capacitive electrode of the first wafer is situated. The second wafer at the same time forms a cover for the first wafer.
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Citations
6 Claims
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1. A capacitive pressure sensor comprising:
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evaluation circuits for measuring an applied pressure; a capacitive electrode; a counter electrode; and first and second silicon on insulator (SOI) wafers lying opposite of each other and being joined to each other in a vacuum-tight manner, a recess being formed between the first and second wafers, the first wafer supporting exclusively the evaluation circuits and the capacitive electrode, the second wafer having the recess formed by surface micromechanics processes, in which the counter electrode to the capacitive electrode of the first wafer is situated, the second wafer forming a cover for the first wafer. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification