Semiconductor device and manufacturing method of the same
First Claim
1. A manufacturing method of a semiconductor device, comprising the steps of:
- (a) sequentially depositing over a substrate made of a semiconductor substrate or an insulator substrate a first conductive film, a first insulating film and a second conductive film;
(b) patterning the second conductive film to form an upper electrode; and
(c) after the step (b), patterning the first conductive film to form a lower electrode and thereby forming a capacitor element including an upper electrode, a capacitor insulating film and a lower electrode,wherein the capacitor element and a bipolar transistor are formed over the substrate,the bipolar transistor being formed by a process comprising the steps of;
(g1) forming a first conductivity type collector layer over the substrate;
(g2) forming a second conductivity type base layer over the collector layer;
(g3) forming a first conductivity type emitter layer over the base layer;
(g4) forming an emitter electrode that electrically connects with the emitter layer over the emitter layer;
(g5) etching the emitter layer;
(g6) after the step of (g5), forming a base electrode that electrically connects with the base layer over the base layer;
(g7) after the step of (g5), patterning the base layer to expose a first region of the collector layer; and
(g8) in the first region, forming a collector electrode that electrically connects with the collector layer.
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Accused Products
Abstract
The present invention intends to provide a technique that can improve the capacitance density while securing the withstand voltage of a capacitor element. In order to achieve the above object, the present inventive manufacturing method of a semiconductor device includes forming a metal film on a silicon oxide film, forming a SiN film on the metal film, forming a metal film on the SiN film, etching the upper most metal film with a photoresist film as a mask to form an upper electrode, thereafter forming a silicon oxide film that covers the upper electrode, patterning by etching the silicon oxide film and the SiN film with a photoresist film as a mask to form a capacitor insulating film and sputter-etching the lowermost metal film with the patterned silicon oxide film as a mask to form a lower electrode.
15 Citations
9 Claims
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1. A manufacturing method of a semiconductor device, comprising the steps of:
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(a) sequentially depositing over a substrate made of a semiconductor substrate or an insulator substrate a first conductive film, a first insulating film and a second conductive film; (b) patterning the second conductive film to form an upper electrode; and (c) after the step (b), patterning the first conductive film to form a lower electrode and thereby forming a capacitor element including an upper electrode, a capacitor insulating film and a lower electrode, wherein the capacitor element and a bipolar transistor are formed over the substrate, the bipolar transistor being formed by a process comprising the steps of; (g1) forming a first conductivity type collector layer over the substrate; (g2) forming a second conductivity type base layer over the collector layer; (g3) forming a first conductivity type emitter layer over the base layer; (g4) forming an emitter electrode that electrically connects with the emitter layer over the emitter layer; (g5) etching the emitter layer; (g6) after the step of (g5), forming a base electrode that electrically connects with the base layer over the base layer; (g7) after the step of (g5), patterning the base layer to expose a first region of the collector layer; and (g8) in the first region, forming a collector electrode that electrically connects with the collector layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification