Composite structure providing steady-state non-equilibrium distribution of free carriers and IR system using same for photon energy up-conversion

• US 7,193,210 B2
• Filed: 06/15/2005
• Issued: 03/20/2007
• Est. Priority Date: 06/12/2003
• Status: Expired due to Fees

• Current Assignee: Sirica Corp.
• Original Assignee: Sirica Corp.
• Inventors: Baskin, Emanuel, Epstein, Alexander, Garber, Valery, Spektor, Boris, Fayer, Alexander
• Primary Examiner(s): Porta; David
• Assistant Examiner(s): Sung; Christine
• Application Number:
  US11/152,399
• Publication Number:
  US 20060022139A1
• Time in Patent Office: 643 Days
• Field of Search: 250/330, 359/326, 136/255
• US Class Current: 250/330
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 2006/12038 Glass (SiO2 based materials)
• CPC Class Codes: G02F 1/353 Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
• CPC Class Codes: G02F 1/3556 Semiconductor materials, e.g. quantum wells
• CPC Class Codes: G02F 2/02 Frequency-changing of light, e.g. by quantum counters
• CPC Class Codes: G02F 2202/10 semiconductor
• CPC Class Codes: G02F 2202/36 Micro- or nanomaterials
• CPC Class Codes: G02F 2203/11 involving infrared radiation
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 31/02162 for filtering or shielding light, e.g. multicolour filters for photodetectors

Abstract

Methods and specialized media adapted to the formation of a steady-state, non-equilibrium distribution of free carriers using mesoscopic classical confinement. Specialized media is silicon-based (e.g., crystalline silicon, amorphous silicon, silicon dioxide) and formed from mesoscopic sized particles embedded with a matrix of wide-bandgap material, such as silicon dioxide. An IR to visible light imaging system is implemented around the foregoing.

Claims

1. A composite structure comprising:

a layer of wide-bandgap material having mesoscopic sized particles of narrow bandgap material embedded therein, the mesoscopic sized particles being substantially spatially separated from each other.

2. The composite structure of claim 1, wherein the mesoscopic sized particles are crystalline silicon particles and the wide-bandgap material is a silicon dioxide layer.

3. The composite structure of claim 2, wherein the mesoscopic particles are formed from a silicon based material layer.

4. The composite structure of claim 1, wherein interface states between the mesoscopic sized particles and the wide-bandgap material are formed substantially without the presence of any intervening, unoccupied interface states.

5. The composite structure of claim 1, wherein the mesoscopic sized particles are electrically isolated one from another within the wide-bandgap material;

and,

wherein the wide-bandgap material comprises a plurality of operative radiative recombination states.

6. The composite structure of claim 5, wherein the wide-bandgap material is doped with at least one of a rare earth element and an isovalent element.

7. A composite structure, comprising:

a layer of wide-bandgap material having mesoscopic sized particles embedded therein;

a first reflective layer formed under the composite structure; and

,

a second reflective layer formed over the composite structure;

wherein the first and second reflective layers cooperate to form a waveguide structure around the layer of wide-bandgap material.

8. The composite structure of claim 7, wherein the waveguide structure passes at least some portion of the visible light spectrum.

9. The composite structure of claim 7, wherein the waveguide structure passes at least some portion of the infrared light spectrum.

10. The composite structure of claim 7, wherein the waveguide structure is adapted to couple optical energy into the layer of wide-bandgap material.

11. An infrared (IR) imaging system, comprising:

an optics subsystem focusing IR radiation on a first surface of a composite structure formed from a layer of wide band-gap material with mesoscopic sized particles embedded therein;

an optical pumping source applying optical pumping energy to the composite structure; and

,

a visible light imaging circuit receiving visible light from a second surface of the composite structure.

12. The infrared (IR) imaging system of claim 11, wherein the mesoscopic sized particles are crystalline silicon particles and the wide band-gap material is one selected from a group consisting of SiO₂, Si₃N₄, or amorphous silicon.

13. The infrared (IR) imaging system of claim 11, further comprising:

a first optical filter selectively passing a portion of the infrared radiation spectrum to the first surface of the composite structure.

14. The infrared (IR) imaging system of claim 13, further comprising a second optical filter isolating the visible light imaging circuit from the optical pump energy.

15. The infrared (IR) imaging system of claim 14, wherein the optical pumping source directly illuminates the first surface of the composite structure with optical pump energy.

16. The infrared (IR) imaging system of claim 14, wherein the optical pumping source illuminates the second surface of the composite structure.

17. The infrared (IR) imaging system of claim 14, further comprising:

a waveguide structure formed around the composite structure; and

wherein the optical pumping source is optically coupled to the composite structure through the waveguide structure.

18. The infrared (IR) imaging system of claim 17, wherein the waveguide structure passes at least some portion of the visible light spectrum.

19. The infrared (IR) imaging system of claim 17, wherein the waveguide structure passes at least some portion of the infrared light spectrum.

20. The infrared (IR) imaging system of claim 11, wherein the optical pumping source is a tunable optical energy source adapted to illuminate the composite structure with wavelength variable optical pumping energy.

21. The infrared (IR) imaging system of claim 11, wherein the mesoscopic sized particles are electrically isolated one from another within the wide-bandgap material;

and,

wherein the wide-bandgap material comprises a plurality of radiative recombination states.

22. The infrared (IR) imaging system of claim 21, wherein the wide-bandgap material is doped with at least one of a rare earth element and an isovalent element.

23. A single infrared (IR) detector, comprising:

a composite structure comprising;

wide-bandgap material doped with at least one of a rare earth element and an isovalent element and having electrically isolated mesoscopic sized particles embedded therein.

24. The single infrared (IR) detector of claim 23, wherein the mesoscopic sized particles are crystalline silicon particles and the wide-bandgap material is a silicon dioxide layer.

25. The single infrared (IR) detector of claim 23, wherein interface states between the mesoscopic sized particles and the wide-bandgap material are formed with substantially no intervening unoccupied interface states.

26. A single infrared (IR) detector, comprising:

a composite structure comprising a wide-bandgap material doped with at least one of a rare earth element and an isovalent element, and having electrically isolated mesoscopic sized particles embedded therein;

a first reflective layer formed under the composite structure; and

,

a second reflective layer formed over the composite structure;

wherein the first and second reflective layers cooperate to form a waveguide structure around the composite structure.

27. The single infrared (IR) detector of claim 26, wherein the waveguide structure passes at least some portion of the visible light spectrum or at least some portion of the infrared light spectrum.

28. The single infrared (IR) detector of claim 27, wherein the waveguide structure is adapted to couple optical energy into the composite structure.