Ultraviolet sensor and method for manufacturing the same

• US 7,193,241 B2
• Filed: 02/15/2005
• Issued: 03/20/2007
• Est. Priority Date: 02/16/2004
• Status: Expired due to Fees

• Current Assignee: Klaus Schmidt
• Original Assignee: Klaus Schmidt
• Inventors: Hayashi, Kazushi, Kawakami, Nobuyuki, Yokota, Yoshihiro, Tachibana, Takeshi
• Primary Examiner(s): TRAN, LONG K
• Application Number:
  US11/057,603
• Publication Number:
  US 20050181122A1
• Time in Patent Office: 763 Days
• Field of Search: 257/77, 257/226, 257/440, 257/323.14, 257/E31.954, 257/E23.111, 257/417, 313/531, 313/530
• US Class Current: 257/77
• CPC Class Codes: G01J 1/429 applied to measurement of ultraviolet light using counting tubes G01T
• CPC Class Codes: G01J 2001/0276 Protection
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/09 Devices sensitive to infrared, visible or ultraviolet radiation H01L31/101 takes precedence
• CPC Class Codes: H01L 31/1085 the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

An ultraviolet sensor includes a substrate; a diamond layer, placed on the substrate, functioning as a detector; and at least one pair of surface electrodes arranged on the diamond layer. The diamond layer has a detecting region present at the surface thereof, the detecting region has at least one sub-region exposed from the surface electrodes, and the sub-region has a covering layer, made of oxide or fluoride, lying thereon. A method for manufacturing the ultraviolet sensor includes a step of forming a diamond layer, functioning as a detector, on a substrate; a step of forming at least one pair of surface electrodes on the diamond layer; and a step of forming a covering layer, made of oxide or fluoride, on at least one sub-region of a detecting region present at the surface of the diamond layer, the sub-region being exposed from the surface electrodes.

Claims

1. An ultraviolet sensor comprising:

a substrate;

a diamond layer, placed on the substrate, functioning as a detector; and

at least one pair of surface electrodes arranged on the diamond layer,

wherein the diamond layer has a detecting region present at the surface thereof, the detecting region has at least one sub-region exposed from the surface electrodes, and the sub-region has a covering layer, made of oxide or fluoride, lying thereon, the oxide being at least one selected from the group consisting of alumina, silica, titania, and zirconia, the fluoride being at least one of calcium fluoride and magnesium fluoride.

2. The ultraviolet sensor according to claim 1, wherein the diamond layer is polycrystalline.

3. The ultraviolet sensor according to claim 1, wherein the diamond layer has a (100) surface and crystal grains which are arranged at the (100) surface, which are oriented in a single direction, and of which the in-plane directions are aligned with each other.