Non-planar MOS structure with a strained channel region
First Claim
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1. A non-planar transistor comprising:
- a silicon germanium body with a top and two sidewalls formed on a substrate and electrically isolated from the substrate;
a doped strained silicon film formed on the sidewalls of the silicon germanium body;
a gate dielectric formed on the strained silicon film;
a gate formed on the gate dielectric; and
a source and a drain formed in the strained silicon.
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Abstract
An embodiment is a non-planar MOS transistor structure including a strained channel region. The combination of a non-planar MOS transistor structure, and in particular an NMOS tri-gate transistor, with the benefits of a strained channel yields improved transistor drive current, switching speed, and decreased leakage current for a given gate length width versus a non-planar MOS structure with an unstrained channel or planar MOS structure including a strained channel.
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Citations
23 Claims
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1. A non-planar transistor comprising:
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a silicon germanium body with a top and two sidewalls formed on a substrate and electrically isolated from the substrate; a doped strained silicon film formed on the sidewalls of the silicon germanium body; a gate dielectric formed on the strained silicon film; a gate formed on the gate dielectric; and a source and a drain formed in the strained silicon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A tri-gate transistor comprising:
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a silicon germanium fin formed on an insulator, the silicon germanium fin including a top surface and two sidewall surfaces; a doped strained silicon film formed on the top surface and two sidewall surfaces of the silicon germanium fin; a gate dielectric formed on the strained silicon film; a gate formed on the gate dielectric wherein the gate extends over the top surface of the silicon germanium fin; and a source and a drain formed in the strained silicon film. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A non-planar transistor comprising:
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a silicon germanium body with a top and two sidewalls formed on a substrate and electrically isolated from the substrate, the silicon germanium body comprising a silicon germanium layer interdiffused with a silicon layer such that the silicon layer has a substantially uniform germanium concentration; a strained silicon film formed on the sidewalls of the silicon germanium body; a gate dielectric formed on the doped strained silicon film; a gate formed on the gate dielectric; and a source and a drain formed in the doped strained silicon film. - View Dependent Claims (19, 20, 21, 22, 23)
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Specification