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Non-planar MOS structure with a strained channel region

  • US 7,193,279 B2
  • Filed: 01/18/2005
  • Issued: 03/20/2007
  • Est. Priority Date: 01/18/2005
  • Status: Expired due to Fees
First Claim
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1. A non-planar transistor comprising:

  • a silicon germanium body with a top and two sidewalls formed on a substrate and electrically isolated from the substrate;

    a doped strained silicon film formed on the sidewalls of the silicon germanium body;

    a gate dielectric formed on the strained silicon film;

    a gate formed on the gate dielectric; and

    a source and a drain formed in the strained silicon.

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