Semiconductor device having a heat spreader exposed from a seal resin

• US 7,193,320 B2
• Filed: 01/28/2003
• Issued: 03/20/2007
• Est. Priority Date: 05/30/2002
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Honda, Toshiyuki, Tsuji, Kazuto, Hiraiwa, Katsuro, Minamizawa, Masaharu, Hosoyamada, Sumikazu, Takenaka, Masashi, Hamano, Toshio, Abe, Mitsuo, Kato, Yoshitsugu
• Primary Examiner(s): Andujar; Leonardo
• Application Number:
  US10/352,074
• Publication Number:
  US 20030222344A1
• Time in Patent Office: 1,512 Days
• Field of Search: 257/738, 257/737, 257/684, 257/796, 257/786, 257/784
• US Class Current: 257/738
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/06135 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/4813 Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/4824 Connecting between the body and an opposite side of the item with respect to the body
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48599 Principal constituent of the connecting portion of the wire connector being Gold (Au)
• CPC Class Codes: H01L 2224/48699 Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
• CPC Class Codes: H01L 2224/49109 outside the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/4911 the connectors being bonded to at least one common bonding area, e.g. daisy chain
• CPC Class Codes: H01L 2224/4943 : the connecting portions being staggered
• CPC Class Codes: H01L 2224/73207 : Bump and wire connectors
• CPC Class Codes: H01L 2224/73215 : Layer and wire connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 23/3128 : the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/4334 : Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 23/49822 : Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/50 : for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10162 : with a square active surface
• CPC Class Codes: H01L 2924/1433 : Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/15151 : the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/1532 : the connection portion being formed on the die mounting surface of the substrate
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18165 : of a wire bonded chip
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/30107 : Inductance

Abstract

A semiconductor element has a circuit formation surface on which electrode terminals are arranged in a peripheral part thereof. The semiconductor element is encapsulated by a mold resin on a substrate which has openings at positions corresponding to the electrodes of the semiconductor element. The semiconductor element is mounted to the substrate in a state where the circuit formation surface faces the substrate and the electrode terminals are positioned at the openings and a back surface opposite to the circuit formation surface of the semiconductor element is exposed from the mold resin. A heat-emitting member formed of a metal plate is provided on a surface of the substrate opposite to a surface on which the semiconductor element is mounted. The surface of the heat-emitting member being exposed from the mold resin.

Claims

1. A semiconductor device comprising:

a first wiring board formed on a substrate and having an opening through which a surface of the substrate is exposed;

a semiconductor element located in the opening and having a back surface opposite to a circuit formation surface, the back surface being bonded to said substrate;

bonding wires which connect electrodes formed on said first wiring board to first electrodes arranged in a peripheral part of the circuit formation surface of said semiconductor element;

a second wiring board facing the circuit formation surface of said semiconductor element and having connection members which are connected to second electrodes arranged in a center part of said circuit formation surface;

first wirings located in said first wiring board;

second wirings located in said second wiring board;

a resin located between said first and second wiring boards;

first external connection terminals formed on said second wiring board and electrically connected to said second electrodes of said semiconductor element through said second wirings in said second wiring board and said connection members;

second external connection terminals formed on said first wiring board electrically connected to said first electrodes of said semiconductor element through wirings in said first wiring board and said bonding wires;

wherein said second wirings are free of contact with said resin;

wherein the first external connection terminals on the second wiring board and the second electrodes on the semiconductor element align respectively, and the second wirings directly connect the first external connection terminals and the connection members by extending in a vertical direction.

2. The semiconductor device as claimed in claim 1, wherein said first electrodes of said semiconductor element are electrodes directly connected to signals and power supply or grounding elements;

said second electrodes are electrodes directly connected to power supply and grounding elements; and

an arrangement pitch and an electrode size of said second electrodes are larger than an arrangement pitch and an electrode size of said first electrodes.

3. The semiconductor device as claimed in claim 2, wherein said second electrodes are formed along circuit wirings for power supply or grounding formed on the circuit formation surface of said semiconductor element.

4. The semiconductor device as claimed in claim 1, wherein said connection members of said second wiring board are made of a thermally meltable conductive material.

5. The semiconductor device as claimed in claim 1, wherein said connection members of said second wiring board are made of a metal wire formed in the shape of a loop.

6. The semiconductor device as claimed in claim 1, wherein said second electrodes of a said semiconductor element have an elongated shape, and said connection members of said second wiring board are made of a metal wire or a metal foil formed by stitch-bonding provided along said second electrodes.

7. The semiconductor device as claimed in claim 1, wherein said substrate is made of an electrically conductive material and the back surface of said semiconductor element is joined to said substrate by an electrically conductive bonding material.

8. The semiconductor device as claimed in claim 1, wherein said first wiring board is a multi-layer wiring board, and said first electrodes of said semiconductor element are connected to electrodes formed in a different layer of said first wiring board through bonding wires.

9. The semiconductor device as claimed in claim 1, wherein said second wiring board is a multi-layer wiring board, and a passive element is formed on at least one of said first and second wiring boards.

10. The semiconductor device as claimed in claim 9, wherein passive element is a bypass capacitor.

11. The semiconductor device as claimed in claim 1, wherein said semiconductor element is located in a recess formed in said substrate;

said first wiring board is a flexible board; and

electrodes of said flexible board are connected to said first electrodes of said semiconductor element by TAB connection.

12. A semiconductor device comprising:

a first wiring board formed on a substrate;

a semiconductor element being bonded to said substrate;

bonding wires that connect electrodes formed on said first wiring board to first electrodes arranged on said semiconductor element;

a second wiring board connected to said semiconductor element according to a flip-chip connection, said second wiring board having connection members which are connected to second electrodes arranged in a center part of a surface of said semiconductor element;

first external connection terminals formed on said second wiring board;

second external connection terminals formed on said first wiring board; and

wherein the first external connection terminals on the second wiring board and the second electrodes on the semiconductor element align respectively, and second wirings directly connect the first external connection terminals and the connection members by extending in a vertical direction.