Electro-optical device and electronic apparatus

• US 7,193,663 B2
• Filed: 10/22/2003
• Issued: 03/20/2007
• Est. Priority Date: 10/31/2002
• Status: Active Grant

• Current Assignee: 138 East LCD Advancements Limited (Vector Capital Corporation)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Shimizu, Yuichi, Iki, Takunori, Yamasaki, Yasuji
• Primary Examiner(s): TON, MINH TOAN T
• Application Number:
  US10/690,270
• Publication Number:
  US 20050088596A1
• Time in Patent Office: 1,245 Days
• Field of Search: 349/110, 349/38, 349/44, 349/139
• US Class Current: 349/38
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136218 Shield electrodes

Abstract

An electro-optical device includes, above a substrate: data lines extending in a first direction; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and shielding layers disposed between the data lines and the pixel electrodes. Further, nitride films are included in the shielding layers and are formed along the data lines and are wider than the data lines.

Claims

1. An electro-optical device, comprising:

a substrate;

a data line extending in a first direction;

a scanning line extending in a second direction and intersecting the data line;

a pixel electrode and a thin film transistor disposed so as to correspond to an intersection region of the data line and the scanning line, the pixel electrode being formed above the substrate;

a shielding layer disposed above the data line and below the pixel electrode,

a first storage capacitor electrode electrically connected to the thin film transistor and the pixel electrode;

a second storage capacitor electrode electrically connected to the shielding layer and overlapping the first storage capacitor in plan view, the second storage capacitor electrode being electrically isolated from the data line and being formed in the same layer and from the same material as the data line;

a first titanium nitride film being included in the shielding layer and being formed along the data line and wider than the data line; and

a second titanium nitride film included in the data line and the second storage capacitor electrode.

2. The electro-optical device according to claim 1, a planarization process being performed on a surface of an interlayer insulating film arranged as a base of the pixel electrode.

3. The electro-optical device according to claim 1, the data line being formed of the same film as one of a pair of electrodes which constitute a storage capacitor.

4. The electro-optical device according to claim 3, the data line forming a laminated structure of an aluminum film and a conductive polysilicon film.

5. The electro-optical device according to claim 1, further comprising:

a relay layer being electrically connected to the pixel electrode and one of a pair of electrodes which constitute a storage capacitor.

6. The electro-optical device according to claim 5, the relay layer being made of an aluminum film and a nitride film.

7. The electro-optical device according to claim 5, the shielding layer being formed of the same film as the relay layer.

8. The electro-optical device according to claim 1, the nitride film being formed on a surface of the data line.

9. The electro-optical device according to claim 1, the shielding layer being formed of a transparent conductive material and being formed over an entire surface of the substrate.

10. The electro-optical device according to claim 1, wherein all edges of the light shielding layer are aligned with all edges of the titanium nitride film.