Interference display cell

• US 7,193,768 B2
• Filed: 03/24/2004
• Issued: 03/20/2007
• Est. Priority Date: 08/26/2003
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm MEMS Technologies Incorporated (Qualcomm, Inc.)
• Inventors: Lin, Wen-Jian
• Primary Examiner(s): Lester; Evelyn A.
• Application Number:
  US10/807,129
• Publication Number:
  US 20050046948A1
• Time in Patent Office: 1,091 Days
• Field of Search: 359290-292, 359/298, 359/223, 359/224, 359/578, 359/585
• US Class Current: 359/291
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

An optical interference display unit with a first electrode, a second electrode and support structures located between the two electrodes is provided. The second electrode has at least a first material layer and a second material layer. At least one material layer of the two is made from conductive material and the second conductive layer is used as a mask while an etching process is performed to etch the first material layer to define the second electrode.

Claims

1. An optical interference display unit at least comprising:

a first electrode;

a second electrode, in parallel with the first electrode and comprising;

a material layer; and

a conductive layer on the first material layer; and

a support structure partially covered by the second electrode and supporting an edge of the second electrode;

wherein a material of the conductive layer is more difficult to etch than a material of the first material layer.

2. The optical interference display unit of claim 1, wherein the optical interference display unit is located on a substrate.

3. The optical interference display unit of claim 2, wherein the substrate is a transparent substrate.

4. The optical interference display unit of claim 1, wherein a material of the first electrode is a conductive transparent material.

5. The optical interference display unit of claim 4, wherein the conductive transparent material is indium tin oxide (ITO), indium zinc oxide (IZO), or indium oxide (IO).

6. The optical interference display unit of claim 1, wherein the second electrode is a deformable electrode.

7. The optical interference display unit of claim 1, wherein the second electrode is a movable electrode.

8. The optical interference display unit of claim 1, wherein a material for forming the support structure is selected from a group consisting of positive photoresist, negative photoresist, acrylic resin and epoxy resin.

9. The optical interference display unit of claim 1, wherein the first material layer is made from a conductive material.

10. The optical interference display unit of claim 4 9 wherein a material for forming the first material layer is aluminum, chromium, cobalt, copper, silicon nitride or silicon oxide.

11. The optical interference display unit of claim 1, wherein the first material layer is made from dielectric material.

12. The optical interference display unit of claim 1, wherein a material for forming the conductive layer is aluminum, chromium, cobalt, copper, silicon nitride or silicon oxide.