Thin film transistor, manufacturing method thereof, and circuit and liquid crystal display device using the thin film transistor

• US 7,195,960 B2
• Filed: 10/03/2003
• Issued: 03/27/2007
• Est. Priority Date: 06/28/1996
• Status: Expired due to Fees

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Inoue, Satoshi
• Primary Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US10/677,257
• Publication Number:
  US 20040126940A1
• Time in Patent Office: 1,271 Days
• Field of Search: 438/149, 438/163, 438/164, 438/166, 438/291, 438/282
• US Class Current: 438/149
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A thin film transistor has a structure capable of decreasing deterioration in Vgs-Ids characteristics. The thin film transistor has a source region composed of an N-type impurity-diffused region, a drain region, and a gate electrode, and a channel region formed directly below the gate electrode. To the source region and the drain region are connected a source electrode and a drain electrode, respectively, through a plurality of contact holes. In the channel region are formed a plurality of P-type impurity-diffused regions at constant intervals.

Claims

1. A method of manufacturing a transistor, comprising:

forming a semiconductor film on a substrate;

forming an intrinsic portion and a first impurity portion in the semiconductor film by applying a first impurity atom to the semiconductor film, the intrinsic portion not including the first impurity atom, the first impurity portion including the first impurity atom;

forming an insulator film over the semiconductor film;

forming a gate electrode over the insulator film to define the first impurity portion as three portions, a first portion of the first impurity portion overlapping with the gate electrode, and a second portion of the first impurity portion and a third portion of the first impurity portion not overlapping with the gate electrode, the first portion of the first impurity portion being positioned between the second portion of the first impurity portion and the third portion of the first impurity portion, and to define the intrinsic portion as three portions, a first portion of the intrinsic portion overlapping with the gate electrode, and a second portion of the intrinsic portion and a third portion of the intrinsic portion not overlapping with the gate electrode, the first portion of the intrinsic portion being positioned between the second portion of the intrinsic portion and the third portion of the intrinsic portion; and

forming a second impurity portion in the semiconductor film by applying a second impurity atom to the semiconductor film using the gate electrode as a mask, the second portion of the intrinsic portion being turned into a first portion of the second impurity portion by the applying the second impurity atom, the third portion of the intrinsic portion being turned into a second portion of the second impurity portion by the applying the second impurity atom, the second portion of the first impurity portion protruding into the first portion of the second impurity portion, and the third portion of the first impurity portion protruding into the second portion of the second impurity portion.

2. The method of manufacturing a transistor according to claim 1,

the first impurity portion being separated into at least two parts by the intrinsic portion by applying the first impurity atom to the semiconductor film.

3. The method of manufacturing a transistor according to claim 1,

the intrinsic portion being separated into at least two parts by the first impurity portion by applying the first impurity atom to the semiconductor film.

4. The method of manufacturing a transistor according to claim 1,

the intrinsic portion being separated into at least two parts by the first impurity portion by applying the first impurity atom to the semiconductor film, the two parts of the intrinsic portion being arranged in a channel width direction.

5. The method of manufacturing a transistor according to claim 1, the semiconductor film having a channel region under the gate electrode, the channel region consisted of the intrinsic portion and the first impurity portion, the intrinsic portion being separated into a plurality of intrinsic parts and the first impurity portion being separated into a plurality of first impurity parts, the plurality of intrinsic parts and the plurality of first impurity parts being alternated.

6. The method of manufacturing a transistor according to claim 1, the semiconductor film having a channel region under the gate electrode, the channel region consisted of the intrinsic portion and the first impurity portion, the intrinsic portion being separated into a plurality of intrinsic parts and the first impurity portion being separated into a plurality of first impurity parts, the plurality of intrinsic parts and the plurality of first impurity parts being arranged in a channel width direction.

7. The method of manufacturing a transistor according to claim 1, further comprising:

applying an energy to the semiconductor film to crystallize it before the forming of the intrinsic portion and the first impurity portion.

8. The method of manufacturing a transistor according to claim 1, a dosage of the first impurity portion being larger than a dosage of the second impurity portion.

9. A method of manufacturing an active-matrix substrate using the method of manufacturing a transistor according to claim 1.

10. A method of manufacturing an electro luminescent device using the method of manufacturing a transistor according to claim 1.

11. A method of manufacturing a display device using the method of manufacturing a transistor according to claim 1.

12. A method of manufacturing an electronic apparatus using the method of manufacturing a transistor according to claim 1.

13. The method of manufacturing a transistor according to claim 1, an amount of peripheral electron of the first impurity atom and an amount of peripheral electron of the second impurity atom being different.

14. A method of manufacturing a transistor, comprising:

forming a semiconductor film on a substrate;

forming an intrinsic portion and a first impurity portion in the semiconductor film by applying a first impurity atom to the semiconductor film, the intrinsic portion not including the first impurity atom, the first impurity portion including the first impurity atom;

forming an insulator film over the semiconductor film;

forming a gate electrode over the insulator film to define the intrinsic portion as three portions, a first portion of the intrinsic portion overlapping with the gate electrode, and a second portion of the intrinsic portion and a third portion of the intrinsic portion not overlapping with the gate electrode, the first portion of the intrinsic portion being positioned between the second portion of the intrinsic portion and the third portion of the intrinsic portion; and

forming a second impurity portion in the semiconductor film by applying a second impurity atom to the semiconductor film using the gate electrode as a mask, the second portion of the intrinsic portion being turned into a first portion of the second impurity portion by the applying the second impurity atom the third portion of the intrinsic portion being turned into a second portion of the second impurity portion by the applying the second impurity atom, and no portion of the first impurity portion not overlapping with the gate electrode.

15. A method of manufacturing a transistor, comprising:

forming a semiconductor film on a substrate;

forming an intrinsic portion and a first impurity portion in the semiconductor film by applying a first impurity atom to the semiconductor film, the intrinsic portion not including the first impurity atom, the first impurity portion including the first atom, the first impurity portion being separated into at least two portions by the intrinsic portion;

forming an insulator film over the semiconductor film;

forming a gate electrode over the insulator film to define the intrinsic portion as three portions, a first portion of the intrinsic portion overlapping with the gate electrode, and a second portion of the intrinsic portion and a third portion of the intrinsic portion not overlapping with the gate electrode, the first portion of the intrinsic portion being positioned between the second portion of the intrinsic portion and the third portion of the intrinsic portion, the at least two portions of the first impurity portion overlapping with the gate electrode; and

forming a second impurity portion in the semiconductor film by applying a second impurity atom to the semiconductor film using the gate electrode as a mask, the second portion of the intrinsic portion being turned into a first portion of the second impurity portion by the applying the second impurity atom, the third portion of the intrinsic portion being turned into a second portion of the second impurity portion by applying the second impurity atom.