Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source

• US 7,196,342 B2
• Filed: 06/29/2005
• Issued: 03/27/2007
• Est. Priority Date: 03/10/2004
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: Cymer Incorporated (ASML Holding NV)
• Inventors: Ershov, Alexander I., Marx, William F.
• Primary Examiner(s): VANORE, DAVID A
• Application Number:
  US11/174,442
• Publication Number:
  US 20050269529A1
• Time in Patent Office: 636 Days
• Field of Search: None
• US Class Current: 250/504.00R
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G03F 7/70033 by plasma extreme ultraviolet [EUV] sources
• CPC Class Codes: G03F 7/70175 Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
• CPC Class Codes: G03F 7/7085 Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
• CPC Class Codes: G03F 7/70916 Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
• CPC Class Codes: G21K 1/06 using diffraction, refraction or reflection, e.g. monochromators G21K1/10, G21K7/00 take precedence
• CPC Class Codes: G21K 2201/06 using diffractive, refractive or reflecting elements
• CPC Class Codes: H05G 2/001 Production of X-ray radiation generated from plasma

Abstract

Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV meteorology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

Claims

1. An apparatus for etching debt from a surface of a EUV light source collector mirror with a controlled plasma etch rate, said apparatus comprising:

a plasma etch system for etching debris, said etch system having at least one controllable parameter to vary a plasma etch rate;

a reference material having a surface positioned to receive substantially a same amount of debris accumulation as at least one zone on the collector mirror surface;

an instrument for analyzing an emission from said reference material surface to produce an output indicative of a debris accumulation amount on said reference material surface; and

a controller responsive to said output to vary an etch rate parameter to control plasma etch rate.

2. An apparatus as recited in claim 1 wherein said emission comprises an etching plasma emission.

3. An apparatus as recited in claim 1 wherein said reference material comprises Indium.

4. An apparatus as recited in claim 1 wherein said reference material comprises Antimony.

5. An apparatus as recited in claim 1 wherein said plasma etch system establishes an RF plasma and said etch rate parameter is RF power.

6. An apparatus as recited in claim 1 further comprising a fiber optic cable to transmit said emission to said instrument.

7. An apparatus as recited in claim 1 wherein said instrument is a spectrometer.

8. An apparatus as recited in claim 7 wherein said output is a spectral line intensity for said reference material.

9. An apparatus as recited in claim 7 wherein said EUV light source creates a plasma comprising tin to generate EUV light and said output is a ratio of a spectral line intensity for said reference material and a spectral line intensity for Tin.