GaN system semiconductor light emitting device excellent in light emission efficiency and light extracting efficiency

• US 7,196,348 B2
• Filed: 01/21/2004
• Issued: 03/27/2007
• Est. Priority Date: 02/12/2003
• Status: Expired due to Fees

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Nakahara, Ken
• Primary Examiner(s): Soward; Ida M.
• Application Number:
  US10/763,137
• Publication Number:
  US 20040164314A1
• Time in Patent Office: 1,161 Days
• Field of Search: 257/13, 257/94, 257 96- 97, 257101-103
• US Class Current: 257/13
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

Although there is provided a high light transmittance of an emitted light by a ITO electrode film conventionally employed, there occurs a formation of a Schottky type contact between the ITO electrode film and a p type GaN system semiconductor layer, thus resulting in a not uniform flow of an electric current. It is an object of the present invention to provide a semiconductor light emitting device constituted by forming a transparent electrode, which facilitates acquiring an ohmic property, to be replaced by an ITO electrode film, at the light extracting or light exit side of the GaN system semiconductor light emitting device, so as to improve a light emission efficiency and a radiation extracting efficiency or a light exit efficiency of a GaN system semiconductor light emitting device. In order to accomplish the above mentioned object, the present invention provides a semiconductor light emitting device comprising a light emission layer, consisting of a GaN system semiconductor, which is interposed between an n type GaN system semiconductor layer and a p type GaN system semiconductor layer, wherein there is provided a Ga-doped Mg_zZn_1-zO (0≦<1) electrode film.

Claims

1. A semiconductor light emitting device comprising a light emission layer, consisting of a GaN system semiconductor, which is interposed between an n type GaN system semiconductor layer and a p type GaN system semiconductor layer, wherein there is provided a Ga-doped Mg_zZn_1-zO (0≦

z<

1) electrode film.

2. The semiconductor light emitting device according to claim 1, characterized in that associated with a quantity of doped Ga, with which the Mg_zZn_1-zO(0≦

z<

1) electrode film is doped, wherein a carrier concentration is 1×

10¹⁹ cm<sup>−

3</sup> or more and 5×

10²¹ cm<sup>−

3</sup> or less.

3. The semiconductor light emitting device according to claim 1, characterized in that there is provided a metal electrode, which supplies an electric current to either the n type GaN system semiconductor layer or the p type GaN system semiconductor layer, and that said Ga-doped Mg_zZn_1-zO (0≦

z<

1) electrode film is formed between the n type GaN system semiconductor layer or the p type GaN system semiconductor layer, and the metal electrode.

4. The semiconductor light emitting device according to claim 3, characterized in that associated with a quantity of, the doped Ga, with which the Mg_zZn_1-zO (0≦

z<

1) electrode film is doped, wherein a carrier concentration is 1×

10¹⁹ cm<sup>−

3</sup> or more and less than 5×

10²¹ cm<sup>−

3</sup>.

5. The semiconductor light emitting device according to claim 1, characterized in that there is provided a metal electrode, which supplies an electric current to either the n type GaN system semiconductor layer or the p type GaN system semiconductor layer, and that the metal electrode and the Ga-doped Mg_zZn_1-zO (0≦

z<

1) electrode film adjoin each other; and

the metal electrode and the Ga-doped Mg_zZn_1-zO(0≦

z<

1) electrode film are arranged so as to be contiguous to the face of the n type GaN system semiconductor layer or the p type GaN system semiconductor layer.

6. The semiconductor light emitting device according to claim 5, characterized in that associated with a quantity of the doped Ga, with which the Mg_zZn_1-zO (0≦

z<

1) electrode is doped, wherein a carrier concentration is 1×

10¹⁹ cm<sup>−

3</sup> or more and less than 5×

10²¹ cm<sup>−

3</sup>.

7. A semiconductor light emitting device comprising a light emission layer, consisting of a GaN system semiconductor, which is interposed between a n type GaN system semiconductor layer and a p type GaN system semiconductor layer, wherein there is provided a B-doped Mg_zZn_1-zO (0≦

z<

1) electrode film disposed on one of the GaN system semiconductor layers.

8. The semiconductor light emitting device according to claim 7, characterized in that there is provided a metal electrode, which supplies an electric current to either the n type GaN system semiconductor layer or the p type GaN system semiconductor layer, wherein said B-doped Mg_zZn_1-zO (0≦

z<

1) electrode film is formed between the n type GaN system semiconductor layer or the p type GaN system semiconductor layer, and the metal electrode.

9. The semiconductor light emitting device according to claim 7, characterized in that there is provided a metal electrode, which supplies an electric current to either the n type GaN system semiconductor layer or the p type GaN system semiconductor layer, wherein the metal electrode and the B-doped Mg_zZn_1-zO (0≦

z<

1) electrode film adjoin each other and the metal electrode and the B-doped Mg_zZn_1-zO (0≦

z<

1) electrode film are arranged so as to be contiguous to the face of the n type GaN system semiconductor layer or the p type GaN system semiconductor layer.

10. A semiconductor light emitting device comprising a light emission layer, consisting of a GaN system semiconductor, which is interposed between a n type GaN system semiconductor layer and a p type GaN system semiconductor layer, wherein there is provided a B-doped Mg_zZn_1-zO (0≦

z<

1) electrode film disposed on one of the GaN system semiconductor layers;

characterized in that associated with a quantity of the doped B, with which the Mg_zZn_1-zO (0≦

z<

1) electrode is doped, wherein a carrier concentration is 1×

10¹⁹ cm<sup>−

3</sup> or more and less than 5×

10²¹ cm<sup>−

3</sup>.

11. A semiconductor light emitting device comprising a light emission layer, consisting of a GaN system semiconductor, which is interposed between a n type GaN system semiconductor layer and a p type GaN system semiconductor layer, wherein there is provided a B-doped Mg_zZn_1-zO (0≦

z<

1) electrode film disposed on one of the GaN system semiconductor layers;

characterized in that there is provided a metal electrode, which supplies an electric current to either the n type GaN system semiconductor layer or the p type GaN system semiconductor layer, wherein said B-doped Mg_zZn_1-zO (0≦

z<

1) electrode film is formed between the n type GaN system semiconductor layer or the p type GaN system semiconductor layer, and the metal electrode;

characterized in that associated with a quantity of the doped B, with which the Mg_zZn_1-zO (0≦

z<

1) electrode is doped, wherein a carrier concentration is 1×

10¹⁹ cm<sup>−

3</sup> or more and less than 5×

10²¹ cm<sup>−

3</sup>.

12. A semiconductor light emitting device comprising a light emission layer, consisting of a GaN system semiconductor, which is interposed between a n type GaN system semiconductor layer and a p type GaN system semiconductor layer, wherein there is provided a B-doped Mg_zZn_1-zO (0≦

z<

1) electrode film disposed on one of the GaN system semiconductor layers;

characterized in that there is provided a metal electrode, which supplies an electric current to either the n type GaN system semiconductor layer or the p type GaN system semiconductor layer, wherein the metal electrode and the B-doped Mg_zZn_1-zO (0≦

z<

1) electrode film adjoin each other and the metal electrode and the B-doped Mg_zZn_1-zO (0≦

z<

1) electrode film are arranged so as to be contiguous to the face of the n time GaN system semiconductor layer or the p type GaN system semiconductor layer;

characterized in that associated with a quantity of the doped B, with which the Mg_zZn_1-zO (0≦

z<

1) electrode is doped, wherein a carrier concentration is 1×

10¹⁹ cm<sup>−

3</sup> or more and less than 5×

10²¹ cm<sup>−

3</sup>.