Methods and systems for determining a thin film characteristic and an electrical property of a specimen
First Claim
1. A system configured to determine at least two properties of a specimen during use, comprising:
- a stage configured to support the specimen during use;
a first measurement device coupled to the stage, wherein the first measurement device is configured to generate one or more output signals responsive to at least one thin film characteristic of the specimen during use, and wherein the first measurement device comprises an X-ray reflectometer;
a second measurement device coupled to the stage, wherein the second measurement device is configured to generate one or more output signals responsive to at least one electrical property of the specimen during use, wherein the second measurement device comprises a device configured to deposit a charge on an upper surface of the specimen, and wherein the second measurement device is further configured to anneal the specimen to drive metal contamination into a dielectric material formed on the specimen and to measure a tunneling voltage of the dielectric material subsequent to annealing of the specimen; and
a processor coupled to the first measurement device and the second measurement device, wherein the processor is configured to determine the at least one thin film characteristic from the one or more output signals of the first measurement device during use and to determine the at least one electrical property of the specimen from the one or more output signals of the second measurement device during use, wherein the at least one electrical property comprises the metal contamination of the dielectric material, andwherein the processor is further configured to determine the metal contamination as a function of the measured tunneling voltage.
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Accused Products
Abstract
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a thin film characteristic and an electrical property of a specimen. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
309 Citations
71 Claims
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1. A system configured to determine at least two properties of a specimen during use, comprising:
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a stage configured to support the specimen during use; a first measurement device coupled to the stage, wherein the first measurement device is configured to generate one or more output signals responsive to at least one thin film characteristic of the specimen during use, and wherein the first measurement device comprises an X-ray reflectometer; a second measurement device coupled to the stage, wherein the second measurement device is configured to generate one or more output signals responsive to at least one electrical property of the specimen during use, wherein the second measurement device comprises a device configured to deposit a charge on an upper surface of the specimen, and wherein the second measurement device is further configured to anneal the specimen to drive metal contamination into a dielectric material formed on the specimen and to measure a tunneling voltage of the dielectric material subsequent to annealing of the specimen; and a processor coupled to the first measurement device and the second measurement device, wherein the processor is configured to determine the at least one thin film characteristic from the one or more output signals of the first measurement device during use and to determine the at least one electrical property of the specimen from the one or more output signals of the second measurement device during use, wherein the at least one electrical property comprises the metal contamination of the dielectric material, and wherein the processor is further configured to determine the metal contamination as a function of the measured tunneling voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66)
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67. A method for determining at least two properties of a specimen, comprising:
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disposing the specimen upon a stage, wherein the stage is coupled to a first measurement device and a second measurement device, and wherein the first measurement device comprises an X-ray reflectometer; generating one or more output signals responsive to at least one thin film characteristic of the specimen with the first measurement device; generating one or more output signals responsive to at least one electrical property of the specimen with the second measurement device, wherein said generating the one or more output signals responsive to the at least one electrical property comprises depositing a charge on an upper surface of the specimen with the second measurement device, annealing the specimen to drive metal contamination into a dielectric material formed on the specimen, and measuring a tunneling voltage of the dielectric material subsequent to annealing of the specimen; processing the one or more output signals from the first measurement device to determine the at least one thin film characteristic of the specimen; and processing the one or more output signals from the second measurement device to determine the at least one electrical property of the specimen, wherein the at least one electrical property comprises the metal contamination of the dielectric material, and wherein the metal contamination is determined as a function of the measured tunneling voltage.
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68. A computer-implemented method for controlling a system configured to determine at least two properties of a specimen during use, wherein the system comprises a stage configured to support the specimen, and wherein the stage is coupled to a first measurement device and a second measurement device, comprising:
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controlling the first measurement device to generate one or more output signals responsive to at least one thin film characteristic of the specimen, wherein the first measurement device comprises an X-ray reflectometer; controlling the second measurement device to generate one or more output signals responsive to at least one electrical property of the specimen, wherein the second measurement device is further configured to generate the one or more output signals by depositing a charge on an upper surface of the specimen, annealing the specimen to drive metal contamination into a dielectric material formed on the specimen, and measuring a tunneling voltage of the dielectric material subsequent to annealing of the specimen; processing the one or more output signals from the first measurement device to determine the at least one thin film characteristic of the specimen; and processing the one or more output signals from the second measurement device to determine the at least one electrical property of the specimen, wherein the at least one electrical property comprises the metal contamination of the dielectric material, and wherein the metal contamination is determined as a function of the measured tunneling voltage.
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69. A method for fabricating a semiconductor device, comprising:
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forming a portion of the semiconductor device upon a specimen; disposing the specimen upon a stage, wherein the stage is coupled to a first measurement device and a second measurement device; generating one or more output signals responsive to at least one thin film characteristic of the specimen with the first measurement device, wherein the first measurement device comprises an X-ray reflectometer; generating one or more output signals responsive to at least one electrical property of the specimen with the second measurement device, wherein said generating the one or more output signals responsive to the at least one electrical property comprises depositing a charge on an upper surface of the specimen with the second measurement device, annealing the specimen to drive metal contamination into a dielectric material formed on the specimen, and measuring a tunneling voltage of the dielectric material subsequent to annealing of the specimen; processing the one or more output signals from the first measurement device to determine the at least one thin film characteristic of the specimen; and processing the one or more output signals from the second measurement device to determine the at least one electrical property of the specimen, wherein the at least one electrical property comprises the metal contamination of the dielectric material, and wherein the metal contamination is determined as a function of the measured tunneling voltage.
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70. A system configured to determine at least two properties of a specimen during use, comprising:
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a stage configured to support the specimen during use; a first measurement device coupled to the stage, wherein the first measurement device is configured to generate one or more output signals responsive to at least one thin film characteristic of the specimen during use, and wherein the first measurement device comprises an X-ray reflectometer; a second measurement device coupled to the stage, wherein the second measurement device is configured to generate one or more output signals responsive to at least one electrical property during use, wherein the second measurement device is further configured to generate the one or more output signals by depositing a charge on an upper surface of the specimen, annealing the specimen to drive metal contamination into a dielectric material formed on the specimen, and measuring a tunneling voltage of the dielectric material subsequent to annealing of the specimen; a local processor coupled to the first and second measurement devices, wherein the local processor is configured to at least partially process the one or more output signals from the first measurement device and the one or more output signals from the second measurement device during use; and a remote controller computer coupled to the local processor, wherein the remote controller computer is configured to receive the at least partially processed one or more output signals, to determine the at least one thin film characteristic from the at least partially processed output signals of the first measurement device, and to determine the at least one electrical property of the specimen from the at least partially processed output signals of the second measurement device during use, wherein the at least one electrical property comprises the metal contamination of the dielectric material, and wherein the remote controller computer is further configured to determine the metal contamination as a function of the measured tunneling voltage.
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71. A method for determining at least two properties of a specimen, comprising:
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disposing the specimen upon a stage, wherein the stage is coupled to a first measurement device and a second measurement device; generating one or more output signals responsive to at least one thin film characteristic of the specimen with the first measurement device, wherein the first measurement device comprises an X-ray reflectometer; generating one or more output signals responsive to at least one electrical property of the specimen with the second measurement device, wherein said generating the one or more output signals responsive to the at least one electrical property comprises depositing a charge on an upper surface of the specimen, annealing the specimen to drive metal contamination into a dielectric material formed on the specimen, and measuring a tunneling voltage of the dielectric material subsequent to annealing of the specimen; processing the one or more output signals from the first measurement device to determine the at least one thin film characteristic of the specimen and the one or more output signals from the second measurement device to determine the at least one electrical property of the specimen, wherein the at least one electrical property comprises the metal contamination of the dielectric material, and wherein the metal contamination is determined as a function of the measured tunneling voltage, comprising; at least partially processing the one or more output signals from the first measurement device and the one or more output signals from the second measurement device using a local processor, wherein the local processor is coupled to the first and second measurement devices; sending the at least partially processed one or more output signals from the local processor to a remote controller computer; and further processing the at least partially processed one or more output signals using the remote controller computer.
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Specification