Aperiodic dielectric multilayer stack
First Claim
1. A structure, comprising:
- a substrate;
a device disposed over the substrate; and
a first dielectric stack disposed between the substrate and the device, wherein the first dielectric stack further comprises;
a plurality of layers comprising a first dielectric material, wherein at least two of the layers comprising a first dielectric material have substantially different thicknesses;
a plurality of layers comprising a second dielectric material;
wherein the average outcoupling efficiency into air of the device over a bandwidth of at least 300 nm is at least 40% greater than that of an otherwise identical device disposed in a structure without the first dielectric stack.
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Accused Products
Abstract
A structure is provided that includes an aperiodic dielectric stack. The structure may include a substrate, a device disposed over the substrate, and a first dielectric stack disposed between the substrate and the device. The first dielectric stack includes a plurality of layers comprising a first dielectric material, wherein at least two of the layers comprising a first dielectric material have substantially different thicknesses, as well as a plurality of layers comprising a second dielectric material. The average outcoupling efficiency into air of the device over a bandwidth of at least 300 nm may be at least 40% greater than that of an otherwise identical device disposed in a structure without the first dielectric stack.
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Citations
25 Claims
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1. A structure, comprising:
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a substrate; a device disposed over the substrate; and a first dielectric stack disposed between the substrate and the device, wherein the first dielectric stack further comprises; a plurality of layers comprising a first dielectric material, wherein at least two of the layers comprising a first dielectric material have substantially different thicknesses; a plurality of layers comprising a second dielectric material; wherein the average outcoupling efficiency into air of the device over a bandwidth of at least 300 nm is at least 40% greater than that of an otherwise identical device disposed in a structure without the first dielectric stack. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A structure, comprising:
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a substrate having a treated surface that improves the outcoupling of light from the substrate into air; a device disposed over the substrate; and a first dielectric stack disposed between the substrate and the device, wherein the first dielectric stack further comprises; a plurality of layers comprising a first dielectric material, wherein at least two of the layers comprising a first dielectric material have substantially different thicknesses; a plurality of layers comprising a second dielectric material wherein the outcoupling efficiency into air of the device is at least 10% greater than that of an identical device in a structure without a dielectric stack. - View Dependent Claims (12)
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13. A structure, comprising:
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an optical cavity defined by a first end layer and a second end layer; the first end layer further comprising a first dielectric stack, wherein the first dielectric stack further comprises; a plurality of layers comprising a first dielectric material, wherein at least two of the layers comprising a first dielectric material have substantially different thicknesses; a plurality of layers comprising a second dielectric material, an optoelectronic device having a first active layer disposed within the optical cavity. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification