Method and apparatus for detecting faults using principal component analysis parameter groupings
First Claim
1. A method for identifying faults in a semiconductor fabrication process, comprising:
- storing measurements for a plurality of parameters of a wafer in the semiconductor fabrication process;
selecting a first subset of the parameters, the subset being associated with a feature formed on the wafer and including at least one of a physical measurement of the feature and an electrical measurement of the feature;
applying a principal component analysis model to the first subset to generate a performance metric; and
identifying a fault condition with the wafer based on the performance metric.
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Abstract
A method for identifying faults in a semiconductor fabrication process includes storing measurements for a plurality of parameters of a wafer in the semiconductor fabrication process. A first subset of the parameters is selected. The subset is associated with a feature formed on the wafer. A principal component analysis model is applied to the first subset to generate a performance metric. A fault condition with the wafer is identified based on the performance metric. A system includes a data store and a fault monitor. The data store is adapted to store measurements for a plurality of parameters of a wafer in a semiconductor fabrication process. The fault monitor is adapted to select a first subset of the parameters, the subset being associated with a feature formed on the wafer, apply a principal component analysis model to the first subset to generate a performance metric, and identify a fault condition with the wafer based on the performance metric.
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Citations
38 Claims
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1. A method for identifying faults in a semiconductor fabrication process, comprising:
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storing measurements for a plurality of parameters of a wafer in the semiconductor fabrication process; selecting a first subset of the parameters, the subset being associated with a feature formed on the wafer and including at least one of a physical measurement of the feature and an electrical measurement of the feature; applying a principal component analysis model to the first subset to generate a performance metric; and identifying a fault condition with the wafer based on the performance metric. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for identifying faults in a semiconductor fabrication process, comprising:
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generating measurements for a plurality of electrical parameters of a wafer in the semiconductor fabrication process; selecting a first subset of the electrical parameters, the subset being associated with a feature formed on the wafer; applying a principal component analysis model to the first subset to generate a performance metric; and identifying a fault condition with the wafer based on the performance metric. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
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Specification