Nitridation of STI liner oxide for modulating inverse width effects in semiconductor devices
First Claim
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1. A method of fabricating a semiconductor device containing isolation structures, the method comprising:
- defining isolation regions and active regions of a semiconductor body;
forming trench regions within the isolation regions of the semiconductor body;
nitriding surfaces of the trench regions including forming a nitride compound;
oxidizing the nitrided surfaces of the trench regions including forming a nitride compound to form nitrogen containing liners; and
filling the trench regions with a dielectric fill material.
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Abstract
A method (1300) of forming a semiconductor device comprising an isolation structure is disclosed, and includes forming a trench region within a semiconductor body (1308). Then, surfaces of the trench region are nitrided (1310) via a nitridation process. An oxidation process is performed that combines with the nitrided surfaces (1312) to form a nitrogen containing liner. Subsequently, the trench region is filled with dielectric material (1316) and then planarized (1318) to remove excess dielectric fill material.
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17 Claims
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1. A method of fabricating a semiconductor device containing isolation structures, the method comprising:
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defining isolation regions and active regions of a semiconductor body; forming trench regions within the isolation regions of the semiconductor body; nitriding surfaces of the trench regions including forming a nitride compound; oxidizing the nitrided surfaces of the trench regions including forming a nitride compound to form nitrogen containing liners; and filling the trench regions with a dielectric fill material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of fabricating a semiconductor device containing isolation structures, the method comprising:
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forming a pad oxide layer over a semiconductor body; forming a hard mask layer on the pad oxide layer; forming a resist mask on the hard mask layer that exposes the hard mask layer within isolation regions and covers the hard mask layer within active regions of the device; patterning the hard mask layer to expose the semiconductor body within isolation regions; performing an etch process using the hard mask layer as a mask that forms trench regions within the isolation regions; nitriding exposed surfaces of the trench regions including forming a nitride compound; oxidizing the exposed surfaces of the trench regions to form nitrogen containing liners; and filling the trench regions with a dielectric fill material. - View Dependent Claims (14, 15)
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16. A method of fabricating a semiconductor device containing isolation structures, the method comprising:
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defining an isolation region of the semiconductor device; performing an etch process using a mask that forms a trench region within the isolation region, wherein the trench region comprises a bottom surface and sidewall surfaces; nitriding the bottom surface and the sidewall surfaces of the trench region; oxidizing the nitrided bottom surface and the sidewall surfaces of the trench regions to form a nitrogen containing liner; repairing damage incurred during the oxidizing with an anneal; and filling the trench region with a dielectric fill material. - View Dependent Claims (17)
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Specification