Diverse band gap energy level semiconductor device

• US 7,199,418 B2
• Filed: 09/25/2002
• Issued: 04/03/2007
• Est. Priority Date: 02/15/2002
• Status: Expired due to Term

• Current Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Original Assignee: SanDisk 3D LLC (Western Digital Corporation)
• Inventors: Lee, Thomas H.
• Primary Examiner(s): Pham; Long
• Application Number:
  US10/254,326
• Publication Number:
  US 20030164494A1
• Time in Patent Office: 1,651 Days
• Field of Search: 365/148, 365/175, 365/105, 257/530, 257/307, 257/328, 257/302
• US Class Current: 257/302
• CPC Class Codes: G11C 11/36 using diodes, e.g. as threshold elements , i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
• CPC Class Codes: H01L 23/5252 comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
• CPC Class Codes: H01L 29/165 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/267 in different semiconductor regions , e.g. heterojunctions H01L29/263 takes precedence
• CPC Class Codes: H01L 29/8615 Hi-lo semiconductor devices, e.g. memory devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10B 20/25 One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links

Abstract

Hetero-structure semiconductor devices having first and second-type semiconductor junctions are disclosed. The hetero-structures are incorporated into pillar and rail-stack memory circuits improving the forward-to-reverse current ratios thereof.

Claims

1. A semiconductor structure comprising:

a first conductor and a second conductor;

a steering element in circuit communication with the first conductor and comprising at least first and second semiconductor materials, the first semiconductor material having a first band gap energy level, the second semiconductor in electrical communication with the first semiconductor and having a second band gap energy level, wherein the second band gap energy level is different from the first band gap energy level; and

a state change element in circuit communication with the steering element and the second conductor, and comprising a selectable high impedance state and a selectable low impedance state.

2. The semiconductor structure of claim 1 wherein the steering element and state change element are configured in a vertically-oriented pillar arrangement.

3. The semiconductor structure of claim 1 wherein the state change element comprises an insulator layer.

4. The semiconductor structure of claim 3 wherein the insulator layer is capable of being selectively breached by passing a current between one of the first and second conductor layers so as to select the low impedance state.

5. The device of claim 1 wherein the first semiconductor layer comprises silicon.

6. The device of claim 1 wherein the second semiconductor layer comprises silicon carbide.

7. The device of claim 5 wherein the second semiconductor layer comprises silicon carbide.

8. The device of claim 1 wherein the first semiconductor layer comprises silicon-germanium.

9. The device of claim 5 wherein the second semiconductor layer comprises silicon-germanium.

10. The device of claim 5 wherein the second semiconductor layer comprises gallium arsenide.

11. The device of claim 5 wherein the second semiconductor layer comprises indium phosphide.

12. The device of claim 1 wherein the first semiconductor layer is selected from the group consisting of:

silicon, silicon-germanium, and indium phosphide.

13. The device of claim 1 wherein the second semiconductor layer is selected from the group consisting of:

silicon, silicon carbide, and gallium arsenide.

14. The device of claim 12 wherein the second semiconductor layer is selected from the group consisting of:

silicon carbide and gallium arsenide.

15. The device of claim 3 wherein the insulator layer comprises silicon dioxide.