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Diverse band gap energy level semiconductor device

  • US 7,199,418 B2
  • Filed: 09/25/2002
  • Issued: 04/03/2007
  • Est. Priority Date: 02/15/2002
  • Status: Expired due to Term
First Claim
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1. A semiconductor structure comprising:

  • a first conductor and a second conductor;

    a steering element in circuit communication with the first conductor and comprising at least first and second semiconductor materials, the first semiconductor material having a first band gap energy level, the second semiconductor in electrical communication with the first semiconductor and having a second band gap energy level, wherein the second band gap energy level is different from the first band gap energy level; and

    a state change element in circuit communication with the steering element and the second conductor, and comprising a selectable high impedance state and a selectable low impedance state.

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