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High-frequency switching device and semiconductor

  • US 7,199,635 B2
  • Filed: 06/10/2004
  • Issued: 04/03/2007
  • Est. Priority Date: 06/12/2003
  • Status: Expired due to Fees
First Claim
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1. A high-frequency switching device comprising:

  • a plurality of high-frequency signal input/output terminals through which high-frequency signals are input/output, and a plurality of high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals, whereineach of said plurality of high-frequency switch circuit sections comprises a series connection circuit of a plurality of field-effect transistors, either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors, whereby ON and OFF states are attained, and resistor elements having first terminals and second terminals, furthermore, the first terminals of said resistor elements are connected to the intermediate connection points of said plurality of field-effect transistors, and the second terminals of said resistor elements are connected to a voltage opposite to the voltage applied to the gate terminals of the field effect transistors.

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