High-frequency switching device and semiconductor

• US 7,199,635 B2
• Filed: 06/10/2004
• Issued: 04/03/2007
• Est. Priority Date: 06/12/2003
• Status: Expired due to Fees

• Current Assignee: Collabo Innovations, Inc. (Wi-LAN Inc.)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Nakatsuka, Tadayoshi, Tara, Katsushi, Fukumoto, Shinji
• Primary Examiner(s): Lam, Tuan T.
• Assistant Examiner(s): Nguyen, Hiep
• Application Number:
  US10/864,352
• Publication Number:
  US 20040251952A1
• Time in Patent Office: 1,027 Days
• Field of Search: None
• US Class Current: 327/308
• CPC Class Codes: H03K 17/102 in field-effect transistor switches
• CPC Class Codes: H03K 17/6871 the output circuit comprising more than one controlled field-effect transistor
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00
• CPC Class Codes: H03K 2217/0036 Means reducing energy consumption

Abstract

The first terminals of a plurality of resistor elements are connected to the intermediate connection points of a plurality of FETs connected in series, and a voltage, having a phase opposite to that of the voltage applied to the gate terminals of the plurality of FETs, is applied to the second terminals of the plurality of resistor elements. With this configuration, the potentials at the intermediate connection points of the plurality of FETs connected in series can be prevented from lowering. As a result, the power that can be handled can be increased. Furthermore, since the potentials at the intermediate connection points of the plurality of FETs connected in series can be prevented from lowering, the deterioration of the distortion characteristic and the isolation characteristic owing to the lowering of the potentials at the intermediate connection points of the plurality of field-effect transistors connected in series is prevented, and excellent high-frequency characteristics are obtained.

Claims

1. A high-frequency switching device comprising:

a plurality of high-frequency signal input/output terminals through which high-frequency signals are input/output, and a plurality of high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals, wherein

each of said plurality of high-frequency switch circuit sections comprises a series connection circuit of a plurality of field-effect transistors, either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors, whereby ON and OFF states are attained, and resistor elements having first terminals and second terminals, furthermore, the first terminals of said resistor elements are connected to the intermediate connection points of said plurality of field-effect transistors, and the second terminals of said resistor elements are connected to a voltage opposite to the voltage applied to the gate terminals of the field effect transistors.

4. A high-frequency switching device set forth in claim 1, comprising a voltage inversion circuit and first and second control terminals to which the input/output signals of said voltage inversion circuit are applied, wherein either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors from either said first or second control terminal.

2. A high-frequency switching device comprising:

a plurality of high-frequency signal input/output terminals through which high-frequency signals are input/output, a plurality of series high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals, and a plurality of shunt high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals and ground terminals, wherein

each of said plurality of series high-frequency switch circuit sections and each of said plurality of shunt high-frequency switch circuit sections respectively comprise a series connection circuit of a plurality of field-effect transistors, either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors, whereby ON and OFF states are attained, and resistor elements having first terminals and second terminals, furthermore, the first terminals of said resistor elements are connected to the intermediate connection points of said plurality of field-effect transistors, and the second terminals of said resistor elements are connected to a voltage opposite to the voltage applied to the gate terminals of the field effect transistors.

5. A high-frequency switching device set forth in claim 2, comprising a voltage inversion circuit and first and second control terminals to which the input/output signals of said voltage inversion circuit are applied, wherein either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors from either said first or second control terminal.

3. A high-frequency switching device comprising:

a plurality of high-frequency signal input/output terminals through which high-frequency signals are input/output, and a plurality of series high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals, wherein

each of said plurality of series high-frequency switch circuit sections comprises a series connection circuit of a plurality of field-effect transistors, either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors, whereby ON and OFF states are attained, and resistor elements having first terminals and second terminals and diodes having anodes and cathodes, furthermore, the first terminals of resistor elements are connected to the intermediate connection points of said plurality of field-effect transistors, the cathodes of diodes are connected to the second terminals of said resistor elements, and the anodes of said diodes are connected to a voltage opposite to the voltage applied to the gate terminals of the field effect transistors.

6. A high-frequency switching device set forth in claim 3, comprising a voltage inversion circuit and first and second control terminals to which the input/output signals of said voltage inversion circuit are applied, wherein either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors from either said first or second control terminal.