Method of feedback control of sub-atmospheric chemical vapor deposition processes
First Claim
1. A method of film deposition in a run-to-run chemical vapor deposition (CVD) process, comprising:
- a) providing a model for CVD deposition of a film, wherein the model is responsive to a tool state of the CVD process and identifies one or more film properties of the film and at least one deposition model variable that correlates with the one or more film properties;
b) depositing a film onto a first substrate using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable;
c) measuring a film property of at least one of said one or more film properties for the deposited film of step (b);
d) calculating an updated deposition model based upon the measured film property of step (c) and the model of step (a),wherein said updated model is calculated after each run of the run-to-run process; and
e) calculating an updated deposition recipe for use in a film deposition onto a second substrate based upon the updated model of step (d) to maintain a target film property.
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Abstract
A method of film deposition in a sub-atmospheric chemical vapor deposition (CVD) process includes (a) providing a model for sub-atmospheric CVD deposition of a film that identifies one or more film properties of the film and at least one deposition model variable that correlates with the one or more film properties; (b) depositing a film onto a wafer using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable; (c) measuring a film property of at least one of said one or more film properties for the deposited film of step (b); (d) calculating an updated deposition model based upon the measured film property of step (c) and the model of step (a); and (e) calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property. The method can be used to provide feedback to a plurality of deposition chambers or to control a film property other than film thickness.
396 Citations
31 Claims
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1. A method of film deposition in a run-to-run chemical vapor deposition (CVD) process, comprising:
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a) providing a model for CVD deposition of a film, wherein the model is responsive to a tool state of the CVD process and identifies one or more film properties of the film and at least one deposition model variable that correlates with the one or more film properties; b) depositing a film onto a first substrate using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable; c) measuring a film property of at least one of said one or more film properties for the deposited film of step (b); d) calculating an updated deposition model based upon the measured film property of step (c) and the model of step (a), wherein said updated model is calculated after each run of the run-to-run process; and e) calculating an updated deposition recipe for use in a film deposition onto a second substrate based upon the updated model of step (d) to maintain a target film property. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A method of determining a model for film deposition in a chemical vapor deposition process, comprising:
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(a) depositing a film on at least one wafer in a chemical vapor deposition process using a deposition recipe having at least one deposition recipe parameter that and at least one tool parameter corresponds to a deposition model variable; (b) identifying a plurality of substantially annular regions of the at least one wafer and measuring a film property of at least two of said plurality of regions for each of the at least one wafers after the deposition of step (a); (c) recording the deposition parameter and the measured film property for at least two of the plurality of regions for each of the at least one wafers on a recordable medium; and (d) fitting the data to establish a relationship between the film property of a substantially annular region of the wafer and the deposition model variable. - View Dependent Claims (29, 30, 31)
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Specification