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FINFET including a superlattice

  • US 7,202,494 B2
  • Filed: 06/28/2006
  • Issued: 04/10/2007
  • Est. Priority Date: 06/26/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • at least one fin field-effect transistor (FINFET) comprising a fin, source and drain regions adjacent opposite ends of said fin, and a gate overlying said fin;

    said fin comprising at least one superlattice including a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

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