Light emitting apparatus
First Claim
1. A light emitting apparatus comprising:
- a GaN substrate which is a nitride semiconductor substrate;
a n-type nitride semiconductor layer at a first main surface side of said nitride semiconductor substrate;
a p-type nitride semiconductor layer, at said first main surface side, placed more distantly from said nitride semiconductor substrate than said n-type nitride semiconductor layer; and
a light emitting layer, at said first main surface side, placed between said n-type nitride semiconductor layer and said p-type nitride semiconductor layer, whereinsaid nitride semiconductor substrate has been n-typed by oxygen doping, the oxygen concentration is within the range of oxygen atoms 1E17/cm3 to 2E19/cm3, the thickness of said GaN substrate is from 100 μ
m to 600 μ
m, and said substrate has a resistivity of 0.5 Ω
•
cm or less, and said p-type nitride semiconductor layer side is down-mounted so that light is emitted from a second main surface of said nitride semiconductor substrate at the opposite side from said first main surface.
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Abstract
In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.
15 Citations
39 Claims
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1. A light emitting apparatus comprising:
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a GaN substrate which is a nitride semiconductor substrate; a n-type nitride semiconductor layer at a first main surface side of said nitride semiconductor substrate; a p-type nitride semiconductor layer, at said first main surface side, placed more distantly from said nitride semiconductor substrate than said n-type nitride semiconductor layer; and a light emitting layer, at said first main surface side, placed between said n-type nitride semiconductor layer and said p-type nitride semiconductor layer, wherein said nitride semiconductor substrate has been n-typed by oxygen doping, the oxygen concentration is within the range of oxygen atoms 1E17/cm3 to 2E19/cm3, the thickness of said GaN substrate is from 100 μ
m to 600 μ
m, and said substrate has a resistivity of 0.5 Ω
•
cm or less, and said p-type nitride semiconductor layer side is down-mounted so that light is emitted from a second main surface of said nitride semiconductor substrate at the opposite side from said first main surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A light emitting apparatus comprising:
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a GaN substrate which is a nitride semiconductor substrate; an n-type AlxGa1-xN layer (x is in the range of from 0 to
1) which is an n-type nitride semiconductor layer at a first main surface side of said GaN substrate;a p-type AlxGa1-xN layer (x is within the range of from 0 to
1), at said first main surface side, placed more distantly from said GaN substrate than said n-type AlxGa1-xN layer; anda light emitting layer, at said first main surface side , placed between said n-type AlxGa1-xN layer and said p-type AlxGa1-xN layer, wherein said GaN substrate has been n-typed by oxygen doping, the oxygen concentration is within the range of oxygen atoms 1E17/cm3 to 2E19/cm3 and the thickness of said GaN substrate is from 100 μ
m to 600 μ
m, said GaN substrate has a dislocation density of 108/cm2 or less, and said p-type AlxGa1-xN layer side is down-mounted so that light is emitted from a second main surface of said GaN substrate at the opposite side from the first main surface.
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34. A light emitting apparatus comprising:
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a GaN substrate which is a nitride semiconductor substrate; an n-type AlxGa1-xN layer (x is in the range of from 0 to
1) which is an n-type nitride semiconductor layer at a first main surface side of said GaN substrate;a p-type AlxGa1-xN layer (x is within the range of from 0 to
1), at said first main surface side ,placed more distantly from said GaN substrate than said n-type AlxGa1-xN layer; anda light emitting layer, at said first main surface side, placed between said n-type AlxGa1-xN layer and said p-type AlxGa1-xN layer, wherein said GaN substrate has been n-typed by oxygen doping, the oxygen concentration is within the range of oxygen atoms 5E18/cm3 to 2E19/cm3 and the thickness of said GaN substrate is within the range of from 200 μ
m to 400 μ
m, said GaN substrate has a dislocation density of 108/cm2 or less, said p-type AlxGa1-xN layer side is down-mounted so that light is emitted from a second main surface of said GaN substrate at the opposite side from the first main surface, and both sides of a rectangular surface which emits light at said main surface is equal to or smaller than 10 mm.
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35. A light emitting apparatus comprising:
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a GaN substrate which is a nitride semiconductor substrate; an n-type AlxGa1-xN layer (x is in the range of from 0 to
1) which is an n-type nitride semiconductor layer at a first main surface side of said GaN substrate;a p-type AlxGa1-xN layer (x is within the range of from 0 to
1), at said first main surface side, placed more distantly from said GaN substrate than said n-type AlxGa1-xN layer; anda light emitting layer, at said first main surface side, placed between said n-type AlxGa1-xN layer and said p-type AlxGa1-xN, wherein said GaN substrate has been n-typed by oxygen doping, the oxygen concentration is within the range of oxygen atoms 3E18/cm3 to 5E18/cm3 and the thickness of said GaN substrate is within the range of from 400 μ
m to 600 μ
m, said GaN substrate has a dislocation density of 108/cm2 or less, said p-type AlxGa1-xN layer side is down-mounted so that light is emitted from a second main surface of said GaN substrate at the opposite side from the first main surface, and both sides of a rectangular surface which emits light at said second main surface is equal to or smaller than 3 mm.
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36. A light emitting apparatus comprising:
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a GaN substrate which is a nitride semiconductor substrate; an n-type AlxGa1-xN layer (x is in the range of from 0 to
1) which is an n-type nitride semiconductor layer at a first main surface side of said GaN substrate;a p-type AlxGa1-xN layer (x is within the range of from 0 to
1), at said first main surface side , placed more distantly from said GaN substrate than said n-type AlxGa1-xN layer anda light emitting layer, at said first main surface side, placed between said n-type AlxGa1-xN layer and said p-type AlxGa1-xN layer, wherein said GaN substrate has been n-typed by oxygen doping, the oxygen concentration is within the range of oxygen atoms 5E18/cm3 to 5E19/cm3 and the thickness of said GaN substrate is within the range of from 100 μ
m to 200 μ
m, said GaN substrate has a dislocation density of 108/cm2 or less, said p-type AlxGa1-xN layer side is down-mounted so that light is emitted from a second main surface of said GaN substrate at the opposite side from the first main surface, and both sides of a rectangular surface which emits light at said second main surface is equal to or smaller than 3 mm.
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37. A light emitting apparatus comprising:
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a GaN substrate which is a nitride semiconductor substrate; an n-type AlxGa1-xN layer (x is in the range of from 0 to
1) which is an n-type nitride semiconductor layer at a first main surface side of said GaN substrate;a p-type AlxGa1-xN layer (x is within the range of from 0 to
1), at said first main surface side, placed more distantly from said GaN substrate than said n-type AlxGa1-xN layer; anda light emitting layer, at said first main surface side , placed between said n-type AlxGa1-xN layer and said p-type AlxGa1-xN layer, wherein dislocation bundles are distributed on said first main surface of said GaN substrate with a density of 4E61cm2 or less on average and said dislocation bundles are generated by discretely concentrating dislocations, which have been unavoidably generated during formation of the GaN substrate, in a string shape to distribute them along the substrate thick-wise direction in order to increase the crystallinity of most area of said GaN substrate, said GaN substrate has a dislocation density of 108/cm2 or less, and said p-type AlxGa1-xN layer side is down-mounted so that light is emitted from a second main surface of said GaN substrate at the opposite side from the first main surface.
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38. A light emitting apparatus comprising:
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a GaN substrate which is a nitride semiconductor substrate; an n-type AlxGa1-xN layer (x is in the range of from 0 to
1) which is an n-type nitride semiconductor layer at a first main surface side of said GaN substrate;a p-type AlxGa1-xN layer (x is within the range of from 0 to
1), at said first main surface side, placed more distantly from said GaN substrate than said n-type AlxGa1-xN layer; anda light emitting layer, at said first main surface side, placed between said n-type AlxGa1-xN layer and said p-type AlxGa1-xN layer, wherein dislocation bundles are distributed on said first main surface with a density of 4E2cm2 or less on average, said GaN substrate has a dislocation density of 108/cm2 or less said p-type AlxGa1-xN layer side is down-mounted so that light is emitted from a second main surface of said GaN substrate at the opposite side from the first main surface, and both sides of a rectangular surface which emits light at said second main surface is within the range of 200 μ
m to 400 μ
m.
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39. A light emitting apparatus comprising:
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a conductive AlN substrate which is a nitride semiconductor substrate; an n-type AlxGa1-xN layer (x is in the range of from 0 to
1) which is an n-type nitride semiconductor layer at a first main surface side of said AlN substrate;a p-type AlxGa1-xN layer (x is in the range of from 0 to
1), at said first main surface side, placed more distantly from said AlN substrate than said n-type AlxGa1-xN layer; anda light emitting layer, at said first main surface side, placed between said n-type AlxGa1-xN layer and said p-type AlxGa1-xN layer, wherein said AlN substrate has a heat conductivity of 100 W/(m·
K) or higher and a resistivity of 0.5 Ω
·
cm or less, said p-type AlxGa1-xN layer side is down-mounted so that light is emitted from a second main surface of said AlN substrate at the opposite side from said first main surface, and the heat resistance of the light emitting apparatus is 30°
C./W or less.
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Specification