Multi-band power amplifier module for wireless communication devices

• US 7,202,735 B2
• Filed: 12/30/2005
• Issued: 04/10/2007
• Est. Priority Date: 01/19/2005
• Status: Active Grant

• Current Assignee: Micro Mobio Corporation
• Original Assignee: Micro-Mobio
• Inventors: Ichitsubo, Ikuroh, Kubota, Kanya
• Primary Examiner(s): Nguyen; Patricia
• Application Number:
  US11/323,788
• Publication Number:
  US 20060158253A1
• Time in Patent Office: 466 Days
• Field of Search: 330/126, 330/124.R, 330/285, 330/296
• US Class Current: 330/126
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H03F 1/0261 with control of the polarisation voltage or current, e.g. gliding Class A
• CPC Class Codes: H03F 1/30 Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in differential amplifiers H03F3/45479
• CPC Class Codes: H03F 2200/111 the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
• CPC Class Codes: H03F 2200/294 the amplifier being a low noise amplifier [LNA]
• CPC Class Codes: H03F 2200/372 Noise reduction and elimination in amplifier
• CPC Class Codes: H03F 2200/39 Different band amplifiers are coupled in parallel to broadband the whole amplifying circuit
• CPC Class Codes: H03F 2200/465 Power sensing
• CPC Class Codes: H03F 3/195 : in integrated circuits
• CPC Class Codes: H03F 3/211 : using a combination of several amplifiers H03F3/60 takes precedence
• CPC Class Codes: H03F 3/68 : Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602

Abstract

A multi-band power amplifier module includes a first power amplifier that amplifies a first input radio frequency signal in a first frequency band in response to a first bias control signal. A second power amplifier amplifies a second input radio frequency signal in a second frequency band in response to a second bias control signal. A first bias control circuit produces the first bias control signal and a second bias control circuit produces the second bias control signal in response to step gain signals received at a step gain terminal. The module has first and second rows of pins oppositely positioned on the module and coupled to the first and second power amplifiers and first and second bias circuits.

Claims

1. A multi-band power amplifier module, comprising:

a step gain terminal to provide a first step gain signal and a second step gain signal;

a first power amplifier configured to amplify a first input radio frequency signal in a first frequency band in response to a first bias control signal to produce a first output radio frequency signal;

a first bias circuit configured to output the first bias control signal;

a second power amplifier configured to amplify a second input radio frequency signal in a second frequency band in response to a second bias control signal to produce a second output radio frequency signal;

a second bias circuit configured to output the second bias control signal; and

first and second rows of pins oppositely positioned on the module and coupled respectively to the first and second power amplifiers and first and second bias circuits.

2. The multi-band power amplifier module of claim 1, further comprising

a power sensing terminal configured to receive a first power sensing signal and a second power sensing signal;

a first power sensing circuit configured to produce the first power sensing signal at the power sensing terminal, wherein the first power amplifier is configured to amplify the first input radio frequency signal in the first frequency band in response to the first power sensing signal; and

a second power sensing circuit configured to produce the second power sensing signal at the power sensing terminal, wherein the second power amplifier is configured to amplify the second input radio frequency signal in the second frequency band in response to the second power sensing signal.

3. The multi-band power amplifier module of claim 1, wherein each row of pins comprises approximately 2.7 millimeters (mm) in dimension.

4. The multi-band power amplifier module of claim 3, wherein each pin comprises approximately 0.3 mm ×

0.3 mm.

5. The multi-band power amplifier module of claim 3, wherein each pin is spaced apart from each other by approximately 0.6 mm.

6. The multi-band power amplifier module of claim 1, further comprising a first side approximately 3.6 mm in width and a second side approximately 2.7 mm in length.

7. The multi-band power amplifier module of claim 1, further comprising a ground plane with dimensions of approximately 2.7 mm by 2.7 mm.

8. The multi-band power amplifier module of claim 7, wherein the ground plane has an indicator to indicate pin 1.

9. The multi-band power amplifier module of claim 1, wherein the input impedance for the input radio frequency signal is 50 ohm.

10. The multi-band power amplifier module of claim 1, wherein the frequency band is centered at approximately one of:

2.5 GHz, 3.5 GHz, 5 GHz.

17. The multi-band power amplifier module of claim 7, wherein the ground plane comprises a notch to indicate pin 1.

11. A multi-band power amplifier module, comprising:

a step gain terminal to provide a first step gain signal and a second step gain signal;

a power sensing terminal configured to receive a first power sensing signal and a second power sensing signal;

a first power amplifier configured to amplify a first input radio frequency signal in a first frequency band in response to the first power sensing signal and the first step gain signal to produce a first output radio frequency signal;

a first power sensing circuit configured to produce the first power sensing signal at the power sensing terminal;

a second power amplifier configured to amplify a second input radio frequency signal in a second frequency band in response to the second power sensing signal and the second step gain signal to produce a second output radio frequency signal;

a second power sensing circuit configured to produce the second power sensing signal at the power sensing terminal; and

first and second rows of pins oppositely positioned on the module and coupled respectively to the first and second power amplifiers to output radio frequency signals.

12. The multi-band power amplifier module of claim 11, wherein each row of pins comprises approximately 2.7 millimeters (mm) in dimension.

13. The multi-band power amplifier module of claim 12, wherein each pin comprises approximately 0.3 mm ×

0.3 mm.

14. The multi-band power amplifier module of claim 13, wherein each pin is spaced apart from each other by approximately 0.6 mm.

15. The multi-band power amplifier module of claim 11, further comprising a first side approximately 3.6 mm in width and a second side approximately 2.7 mm in length.

16. The multi-band power amplifier module of claim 11, further comprising a ground plane with dimensions of approximately 2.7 mm by 2.7 mm.

18. The multi-band power amplifier module of claim 11 wherein the frequency band is centered at approximately one of:

2.5 GHz, 3.5 GHz, 5 GHz.

19. The multi-band power amplifier module of claim 11, comprising a first side approximately 3.6 mm in width, a second side approximately 2.7 mm in length, and a thickness of approximately 0.5 mm, wherein each row of pins comprises approximately 2.7 millimeters (mm) in dimension, wherein each pin comprises approximately 0.3 mm ×

0.3 mm and spaced apart from each other by approximately 0.6 mm.

20. The multi-band power amplifier module of claim 11, further comprising

a first output terminal configured to receive the first output radio frequency signal;

and

a second output terminal configured to receive the second output radio frequency signal;

wherein the first output terminal is positioned in the first row and the second output terminal is positioned in the second row.