Temperature compensation for silicon MEMS resonator

• US 7,202,761 B2
• Filed: 04/18/2006
• Issued: 04/10/2007
• Est. Priority Date: 04/16/2003
• Status: Active Grant

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Partridge, Aaron, Lutz, Markus
• Primary Examiner(s): Summons; Barbara
• Application Number:
  US11/405,817
• Publication Number:
  US 20060186971A1
• Time in Patent Office: 357 Days
• Field of Search: 333/186, 333/197, 333/200
• US Class Current: 333/186
• CPC Class Codes: B81B 2201/0271 Resonators; ultrasonic resonators
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81B 3/0072 For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
• CPC Class Codes: H03H 2009/02496 Horizontal, i.e. parallel to the substrate plane
• CPC Class Codes: H03H 2009/02511 Vertical, i.e. perpendicular to the substrate plane
• CPC Class Codes: H03H 9/02259 Driving or detection means
• CPC Class Codes: H03H 9/02338 Suspension means
• CPC Class Codes: H03H 9/02417 involving adjustment of the transducing gap
• CPC Class Codes: H03H 9/02448 of temperature influence
• CPC Class Codes: H03H 9/2457 Clamped-free beam resonators
• CPC Class Codes: H03H 9/2463 Clamped-clamped beam resonators

Abstract

Thermally induced frequency variations in a micromechanical resonator are actively or passively mitigated by application of a compensating stiffness, or a compressive/tensile strain. Various composition materials may be selected according to their thermal expansion coefficient and used to form resonator components on a substrate. When exposed to temperature variations, the relative expansion of these composition materials creates a compensating stiffness, or a compressive/tensile strain.

Claims

1. A microelectromechanical resonator, comprising:

a substrate;

an oscillating beam formed from a plurality of materials, wherein the oscillating beam includes;

(i) an inner-core comprising a first material having a first coefficient of thermal expansion, and

(ii) an outer-layer, surrounding the inner-core, comprising a second material having a second coefficient of thermal expansion, wherein the second thermal expansion coefficient is different from the first thermal expansion coefficient; and

an anchor, disposed on the substrate and coupled to the oscillating beam, to, at least in part, support the oscillating beam above the substrate.

2. The microelectromechanical resonator of claim 1, wherein the inner-core of the oscillating beam includes silicon, germanium, a silicon oxide or silicon nitride.

3. The microelectromechanical resonator of claim 1, wherein the outer-layer of the oscillating beam includes silicon, germanium, a silicon oxide or a silicon nitride.

4. The microelectromechanical resonator of claim 1, wherein the inner-core of the oscillating beam is silicon and the outer-layer of the oscillating beam is a silicon oxide.

5. The microelectromechanical resonator of claim 1, wherein the outer-layer is disposed on the inner-core.

6. A microelectromechanical resonator, comprising:

a substrate;

an oscillating beam formed from a plurality of materials, wherein the oscillating beam includes;

(i) a first inner-core comprising a first material having a first coefficient of thermal expansion,

(ii) a second inner-core, disposed on and around the first inner-core, comprising a second material having a second coefficient of thermal expansion, and

(iii) an outer-layer, disposed on and around the second inner-core, comprising a third material having a third coefficient of thermal expansion, wherein at least two of the first, second and third thermal expansion coefficients are different; and

an anchor, disposed on the substrate and coupled to the oscillating beam, to, at least in part, support the oscillating beam above the substrate.

7. The microelectromechanical resonator of claim 6, wherein the first inner-core of the oscillating beam includes silicon, germanium, a silicon oxide or a silicon nitride.

8. The microelectromechanical resonator of claim 7, wherein the outer-layer of the oscillating beam includes silicon, germanium, a silicon oxide or a silicon nitride.

9. The microelectromechanical resonator of claim 6, wherein the first inner-core of the oscillating beam is silicon and the outer-layer of the oscillating beam is a silicon oxide.

10. The microelectromechanical resonator of claim 6, wherein the first inner-core of the oscillating beam is silicon, the second inner-core of the oscillating beam is germanium, and the outer-layer of the oscillating beam is a silicon oxide.

11. A micromechanical resonator, comprising:

a substrate;

an oscillating beam formed from a plurality of materials which, in combination, provide a thermal expansion coefficient, wherein the oscillating beam includes;

(i) a first inner-core comprising a first material having a first coefficient of thermal expansion, and

(ii) an outer-layer, surrounding the first inner-core, comprising a second material having a second coefficient of thermal expansion, wherein the second thermal expansion coefficient is different from the first thermal expansion coefficient; and

an anchor, disposed on the substrate and coupled to the oscillating beam, to, at least in part, support the oscillating beam above the substrate, wherein the anchor is formed from at least one material which provides a thermal expansion coefficient which is different from the thermal expansion coefficient of the oscillating beam.

12. The microelectromechanical resonator of claim 11, wherein the first inner-core of the oscillating beam includes silicon, germanium, a silicon oxide or a silicon nitride.

13. The microelectromechanical resonator of claim 11, wherein the outer-layer of the oscillating beam includes silicon, germanium, a silicon oxide or a silicon nitride.

14. The microelectromechanical resonator of claim 11, wherein the first inner-core of the oscillating beam is silicon and the outer-layer of the oscillating beam is a silicon oxide.

15. The microelectromechanical resonator of claim 11, wherein the anchor is formed from at least two different materials.

16. The microelectromechanical resonator of claim 11, wherein the anchor is formed from at least three different materials.

17. The microelectromechanical resonator of claim 11, wherein the oscillating beam further includes a second inner-core which is disposed on and around the first inner-core, wherein the second inner-core comprises a third material having a third coefficient of thermal expansion and wherein at least two of the first, second and third thermal expansion coefficients are different.

18. The microelectromechanical resonator of claim 17, wherein the first inner-core of the oscillating beam includes silicon, germanium, a silicon oxide or silicon nitride.

19. The microelectromechanical resonator of claim 18, wherein the outer-layer of the oscillating beam includes silicon, germanium, a silicon oxide or silicon nitride.

20. The microelectromechanical resonator of claim 17, wherein the first inner-core of the oscillating beam is silicon and the outer-layer of the oscillating beam is a silicon oxide.

21. The microelectromechanical resonator of claim 17, wherein the first inner-core of the oscillating beam is silicon, the second inner-core of the oscillating beam is germanium, and the outer-layer of the oscillating beam is a silicon oxide.

22. The microelectromechanical resonator of claim 17, wherein the anchor is formed from at least two different materials.

23. The microelectromechanical resonator of claim 17, wherein the anchor is formed from at least three different materials.