Self gating photosurface

• US 7,202,898 B1
• Filed: 12/16/1998
• Issued: 04/10/2007
• Est. Priority Date: 12/16/1998
• Status: Expired due to Fees

• Current Assignee: Microsoft International Holdings BV (Microsoft Corporation)
• Original Assignee: 3DV Systems Ltd. (Microsoft Corporation)
• Inventors: Iddan, Gavriel J., Yahav, Giora, Braun, Ori J.
• Primary Examiner(s): Ye; Lin
• Application Number:
  US09/868,405
• Time in Patent Office: 3,037 Days
• Field of Search: 348/301, 348/308, 348/302, 348/296, 348/297, 348/263, 356/4.01, 356/3.07, 250/332, 250/559.08
• US Class Current: 348/301
• CPC Class Codes: G01C 3/08 Use of electric radiation detectors
• CPC Class Codes: G01C 3/22 using a parallactic triangle with variable angles and a base of fixed length at, near, or formed by the object
• CPC Class Codes: G01S 17/48 Active triangulation systems, i.e. using the transmission and reflection of electromagnetic waves other than radio waves
• CPC Class Codes: G01S 17/894 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
• CPC Class Codes: G01S 7/4863 Detector arrays, e.g. charge-transfer gates
• CPC Class Codes: G02B 7/32 using active means, e.g. light emitter including both an active and a passive focus detecting device G02B7/285; using ultrasound G02B7/40

Abstract

A semiconductor surface is provided comprising a plurality of light sensitive pixels wherein each pixel of the plurality of pixels comprises an electronic circuit formed on or in the semiconductor surface, the circuit comprising: a photosensor that generates a signal responsive to light incident thereon at an output thereof; and circuitry that provides a signal responsive to a time lapse between a first time responsive to said signal and a reference time. There is also provided a 3D camera incorporating the semiconductor surface.

Claims

1. A semiconductor surface comprising a plurality of light sensitive pixels, wherein each pixel of said plurality of pixels comprises an electronic circuit formed on or in said semiconductor surface, said circuit comprising:

a photosensor that generates a signal responsive to light incident thereon at an output thereof;

a current integrator;

a switchable current source that can be turned on or off, which when on provides a predetermined current that flows into the integrator; and

circuitry that turns the switchable current source on at a start time and subsequently turns the source off at a stop time and generates a signal responsive to current from the current source that is integrated by the integrator between the start and stop times and wherein one of the start time and stop time is determined responsive to a signal generated by the photosensor.

2. A semiconductor surface according to claim 1 wherein said current integrator comprises a capacitor.

3. A semiconductor surface according to claim 1 wherein the circuitry comprises a comparator having an input connected to the output of the photosensor and an output connected to an input of the switchable current source, wherein when light incident on the photosensor has an intensity greater than a predetermined intensity, the output signal from the photosensor switches the switchable current source between on and off.

4. A semiconductor surface according to claim 1 wherein the switchable current source comprises a flip-flop.

5. A semiconductor surface according to claim 1 wherein the circuit is formed as a monolithic integrated circuit.

6. A semiconductor surface according to claim 1 wherein the circuitry switches the switchable current source to on at the start time responsive to the signal from the photosensor.

7. A semiconductor surface according to claim 1 wherein the circuitry switches the switchable current source to off at the stop time responsive to the signal from the photosensor.

8. A 3D camera comprising a semiconductor surface according claim 1.

9. A 3D camera comprising:

a semiconductor surface according to claim 8;

a light source that illuminates objects in a scene imaged with said 3D camera with at least one light pulse;

wherein for each pixel of said plurality of pixels said start time is a time at which said at least one light pulse is radiated and said stop time is a time at which light from said at least one light pulse reflected by a surface region of said objects is incident on said pixel,

and including circuitry that computes a distance between said pixel and said surface region responsive to the time lapse between the start and stop times.

10. A 3D camera comprising:

a semiconductor surface according to claim 8;

a light source controllable to illuminate an object with light from a fan beam at known times, wherein position of the fan beam is defined by a scan angle and for different known times the scan angle is known and different;

wherein said start time for said plurality of pixels is a time prior to illumination of the object by the fan beam and wherein for each scan angle light reflected from the fan beam by a region of the object is incident on a pixel of the plurality of pixels and said stop time for the pixel is a time at which reflected light is incident on the pixel; and

including circuitry that determines from the signal responsive to the current integrated between the start and stop times and the known times, a scan angle for the fan beam from which the pixel is illuminated and uses the scan angle and position of the pixel in the semiconductor surface to determine by triangulation a distance of the region from the pixel.

11. A 3D camera according to claim 10 wherein said fan beam moves between scan angles at a rate so that differences between said stop times for different pixels illuminated with reflected light from said fan beam at different scan angles are greater than a given time difference and differences between said stop times for different pixels illuminated with reflected light from said fan beam at the same scan angle are less than the given time difference.

12. A 3D camera according to claim 11 comprising a reflector that reflects light to at least one pixel in said semiconductor surface for each of said scan angles and wherein for a given scan angle, differences between said stop time for said at least one pixel and said stop times for pixels illuminated by light from said fan beam reflected by said object are less than said given time difference.

13. A 3D camera according to claim 12 and including circuitry that determines said given scan angle from the location of said at least one pixel.

14. A 3D camera for measuring distances to points on an object comprising:

a semiconductor surface comprising a plurality of light sensitive pixels wherein each pixel comprises a circuit having a photosensor, a switch and an output terminal, wherein said circuit provides a signal on said output terminal only while light is incident on said photosensor and said switch is closed;

a fan beam controllable to illuminate the object from at least one position of the fan beam, which position is defined by a scan angle, so that light from said fan beam is reflected by said object to at least one of said pixels,

a controller that controls the fan beam to illuminate the object at a plurality of scan angles of the fan beam, wherein for each scan angle, while light from the fan beam illuminates the object, the controller simultaneously closes a plurality of the switches and for a pixel that generates a pulse when the pixel'"'"'s switch is closed, the controller determines a distance from the pixel to the object by triangulation responsive to the scan angle and the position oI the pixel in the semiconductor surface.

15. A 3D camera according to claim 14 wherein said circuits are formed in or on said semiconductor surface.

16. A 3D camera according to claim 14 wherein said circuits are formed as elements of a monolithic integrated circuit.

17. A 3D camera according to claim 14 comprising signal receiving circuitry having a plurality of inputs and wherein pixels for which said switches are simultaneously closed have said output terminals connected to different inputs of said signal receiving circuitry.

18. A 3D camera according to claim 17 wherein said plurality of pixels comprises an array of pixels having rows and columns of pixels, wherein each pixel belongs to one row and one column of said array.

19. A 3D camera according to claim 18 wherein said output terminals of pixels in a same column of pixels are connected to a same input of said signal receiving circuitry.

20. A 3D camera according to claim 19 wherein the controller closes, substantially simultaneously, said switches of all pixels in a same single row of pixels.

21. A 3D camera according to claim 20 wherein the controller sequentially closes, row by row, the switches of all the pixels in a same single row of pixels.

22. A 3D camera according to claim 21 wherein said signal receiving circuitry comprises an encoder and said output terminals of pixels in a same column of pixels are connected to a same input of the encoder.

23. A 3D camera according to claim 18 wherein columns of said semiconductor surface are parallel to the plane of said fan beam for all positions of said fan beam at which said fan beam illuminates said object.

24. A 3D camera according to claim 14 wherein an output of said photosensor is connected to a contact terminal of said switch.

25. A 3D camera according to claim 14 wherein said circuit comprises a comparator having a first input connected to said photosensor, a second input biased with a reference voltage and an output and wherein when light having an intensity greater than a predetermined intensity is incident on said photosensor, voltage on the first input rises above the reference voltage and the comparator generates an output signal.

26. A 3D camera according to claim 25 wherein said output of said comparator is connected to a contact terminal of said switch.

27. A method of measuring distances to regions of an object comprising:

providing a semiconductor surface having a plurality of light sensitive pixels, each of which provides an output signal responsive to light thereon only while illuminated with the light;

illuminating said object with light from a fan beam of light having a position defined by a scan angle so that light from the fan beam is reflected by the object to at least one of said plurality of pixels;

simultaneously sensing signals from a group of pixels in the semiconductor surface to determine which of the pixels in the group is providing a signal;

determining the scan angle for the pixels in the group of pixels;

using locations of pixels that provide signals and said determined scan angle to determine distances to regions of said object.

28. A method according to claim 27 wherein said plurality of pixels in the semiconductor surface is arranged in a rectangular array of rows and columns pixels.

29. A method according to claim 28 wherein the group of pixels comprises all pixels in a same row of pixels.

30. A method according to claim 29 and comprising sensing signals from pixels in the semiconductor surface in a plurality of rows of pixels sequentially, row by row.

31. A method according to claim 28 comprising providing a signal sensing means and wherein sensing signals comprises sensing signals from all pixels in a column of pixels on a same input of said sensing means.