Semiconductor device and fabrication method for the same
First Claim
1. A fabrication method of a semiconductor device including a first device and a second device that are both provided on an insulating substrate wherein the first device is a transferred layer that has been transferred onto the insulating substrate at least with an active layer, a gate insulating film and a gate electrode that are previously formed thereon, and the second device is formed on the insulating substrate by being deposited thereon,said method comprising:
- (a) bonding a transferred substrate with the insulating substrate;
(b) detaching a part of the transferred substrate after the step (a); and
(c) forming a marker detectable by light before the step (a) on the transferred substrate on a portion allowing detection by light, that is performed after the step (b) from an opposite side of the transferred substrate to a side facing the insulating substrate, the marker being used for alignment in semiconductor device forming steps that are performed after the step (a), and wherein the marker is formed on a layer having the gate electrode, from a same material as the gate electrode.
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Accused Products
Abstract
In a semiconductor device including a monocrystalline thin film transistor 16a that has been formed on a monocrystalline Si wafer 100 and then is transferred to a insulating substrate 2, LOCOS oxidization is performed with respect to the element-isolation region of the monocrystalline Si wafer 100 so as to create a field oxide film (SiO2 film) 104, and a marker 107 is formed on the field oxide film 104. With this structure, alignment of components may be performed based on a gate electrode 106 upon or after the transfer step.
241 Citations
24 Claims
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1. A fabrication method of a semiconductor device including a first device and a second device that are both provided on an insulating substrate wherein the first device is a transferred layer that has been transferred onto the insulating substrate at least with an active layer, a gate insulating film and a gate electrode that are previously formed thereon, and the second device is formed on the insulating substrate by being deposited thereon,
said method comprising: -
(a) bonding a transferred substrate with the insulating substrate; (b) detaching a part of the transferred substrate after the step (a); and (c) forming a marker detectable by light before the step (a) on the transferred substrate on a portion allowing detection by light, that is performed after the step (b) from an opposite side of the transferred substrate to a side facing the insulating substrate, the marker being used for alignment in semiconductor device forming steps that are performed after the step (a), and wherein the marker is formed on a layer having the gate electrode, from a same material as the gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A fabrication method of a semiconductor device including a first device and a second device that are both provided on an insulating substrate wherein the first device is a transferred layer that has been transferred onto the insulating substrate at least with an active layer, a gate insulating film and a gate electrode that are previously formed thereon, and the second device is formed on the insulating substrate by being deposited thereon,
said method comprising: -
(a) bonding a transferred substrate with the insulating substrate; (b) detaching a part of the transferred substrate after the step (a); and (c) forming a marker detectable by light before the step (a) on the transferred substrate on a portion allowing detection by light, that is performed after the step (b) from an opposite side of the transferred substrate to a side facing the insulating substrate, the marker being used for alignment in semiconductor device forming steps that are performed after the step (a), and wherein the step (c) is performed before the step (a) by forming the marker and metal leads on the transferred substrate on a same layer from a same material. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification