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Semiconductor device and fabrication method for the same

  • US 7,205,204 B2
  • Filed: 10/14/2004
  • Issued: 04/17/2007
  • Est. Priority Date: 10/22/2003
  • Status: Expired due to Fees
First Claim
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1. A fabrication method of a semiconductor device including a first device and a second device that are both provided on an insulating substrate wherein the first device is a transferred layer that has been transferred onto the insulating substrate at least with an active layer, a gate insulating film and a gate electrode that are previously formed thereon, and the second device is formed on the insulating substrate by being deposited thereon,said method comprising:

  • (a) bonding a transferred substrate with the insulating substrate;

    (b) detaching a part of the transferred substrate after the step (a); and

    (c) forming a marker detectable by light before the step (a) on the transferred substrate on a portion allowing detection by light, that is performed after the step (b) from an opposite side of the transferred substrate to a side facing the insulating substrate, the marker being used for alignment in semiconductor device forming steps that are performed after the step (a), and wherein the marker is formed on a layer having the gate electrode, from a same material as the gate electrode.

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