Selective metal encapsulation schemes
First Claim
1. A method of processing a semiconductor substrate, comprising the steps of:
- depositing a protective layer on a topographically substantially flat substrate surface comprising an exposed conductive element;
selectively removing a portion of the protective layer to expose the conductive element of the substrate surface;
selectively electrolessly depositing a metallic passivating layer onto the exposed conductive element, wherein discontinuous regions of stray metallic passivating material are also deposited on the protective layer; and
removing at least a portion of the protective layer from the substrate after deposition of the metallic passivating layer, wherein the stray metallic passivating material deposited on the protective layer is also removed.
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Accused Products
Abstract
A method and system of processing a semiconductor substrate includes, in one or more embodiments, depositing a protective layer on the substrate surface comprising a conductive element disposed in a dielectric material; processing the protective layer to expose the conductive element; electrolessly depositing a metallic passivating layer onto the conductive element; and removing at least a portion of the protective layer from the substrate after electroless deposition. In another aspect, a method and system of processing a semiconductor includes depositing a metallic passivating layer onto a substrate surface comprising a conductive element, masking the passivating layer to protect the underlying conductive element of the substrate surface, removing the unmasked passivating layer, and removing the mask from the passivating layer.
401 Citations
33 Claims
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1. A method of processing a semiconductor substrate, comprising the steps of:
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depositing a protective layer on a topographically substantially flat substrate surface comprising an exposed conductive element; selectively removing a portion of the protective layer to expose the conductive element of the substrate surface; selectively electrolessly depositing a metallic passivating layer onto the exposed conductive element, wherein discontinuous regions of stray metallic passivating material are also deposited on the protective layer; and removing at least a portion of the protective layer from the substrate after deposition of the metallic passivating layer, wherein the stray metallic passivating material deposited on the protective layer is also removed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of processing a semiconductor substrate, comprising:
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steps for depositing a protective layer on a topographically substantially flat substrate surface comprising an exposed conductive element disposed in a dielectric material; steps for processing the protective layer to expose the conductive element; steps for selectively electrolessly depositing a metallic passivating layer onto the conductive element, wherein discontinuous regions of stray metallic passivating material are also deposited on the protective layer; and steps for removing at least a portion of the protective layer from the substrate after electroless deposition, wherein the stray metallic passivating material deposited on the protective layer is also removed. - View Dependent Claims (23, 24, 25, 26, 27, 31, 32, 33)
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28. A system for processing a semiconductor substrate, comprising:
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means for depositing a protective layer on a topographically substantially flat substrate surface comprising an exposed conductive element disposed in a dielectric material; means for processing the protective layer to expose the conductive element; means for selectively electrolessly depositing a metallic passivating layer onto the conductive element, wherein discontinuous regions of stray metallic passivating material are also deposited on the protective layer; and means for removing at least a portion of the protective layer from the substrate after electroless deposition, and for removing the stray metallic passivating material deposited on the protective layer. - View Dependent Claims (29, 30)
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Specification