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Forming low k dielectric layers

  • US 7,205,246 B2
  • Filed: 11/18/2002
  • Issued: 04/17/2007
  • Est. Priority Date: 11/16/2001
  • Status: Expired due to Fees
First Claim
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1. A method of forming a low k dielectric layer including:

  • (a) depositing an unset dielectric layer on a substrate, the dielectric layer including Silicon, Carbon and Oxygen;

    (b) exposing the surface of the dielectric layer to an activated gas to form a semi-permeable skin on or of the surface of the layer; and

    (c) curing the layer to render at least part of the layer porous.

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