Forming low k dielectric layers

• US 7,205,246 B2
• Filed: 11/18/2002
• Issued: 04/17/2007
• Est. Priority Date: 11/16/2001
• Status: Expired due to Fees

• Current Assignee: Aviza Europe Limited
• Original Assignee: Aviza Technology Limted (KLA Corporation)
• Inventors: MacNeil, John, Gris, Herve, Giles, Katherine, Ishaq, Sajid
• Primary Examiner(s): Whitehead, Jr.; Carl
• Assistant Examiner(s): Harrison; Monica D.
• Application Number:
  US10/298,225
• Publication Number:
  US 20030124870A1
• Time in Patent Office: 1,611 Days
• Field of Search: 438/653, 438/629, 438/619, 438/396, 438/253, 438/240, 438/3, 438/758, 73/240.4, 257/760
• US Class Current: 438/758
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/31695 Deposition of porous oxides or porous glassy oxides or oxide based porous glass
• CPC Class Codes: H01L 23/49894 Materials of the insulating layers or coatings
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A low k dielectric layer is formed by depositing an unset dielectric layer on a substrate, the dielectric layer including Silicon, Carbon and Oxygen. The surface of the dielectric layer exposed to an activated gas to form a semi-permeable skin on or of the surface of the layer. The layer is then cured to render at least part of the layer porous.

Claims

1. A method of forming a low k dielectric layer including:

(a) depositing an unset dielectric layer on a substrate, the dielectric layer including Silicon, Carbon and Oxygen;

(b) exposing the surface of the dielectric layer to an activated gas to form a semi-permeable skin on or of the surface of the layer; and

(c) curing the layer to render at least part of the layer porous.

2. A method as claimed in claim 1 wherein the dielectric layer is deposited by chemical vapour deposition.

3. A method as claimed in claim 1 further including removing at least part of the semi-permeable skin prior to the layers functional use.

4. A method as claimed in claim 3 wherein the dielectric constant of the layer is less than 2.4.

5. A method of forming a low k dielectric layer including:

(a) depositing an unset dielectric layer on a substrate, the dielectric layer including Silicon, Carbon and Oxygen;

(b) at least partially curing a surface zone of the layer; and

(c) curing the layer to render the bulk of the layer porous.

6. A method as claimed in claim 5 wherein the dielectric layer is deposited by chemical vapour deposition.

7. A method as claimed in claim 5 further including removing at least part of the surface zone prior to the layers functional use.

8. A method as claimed in claim 7 wherein the dielectric constant of the layer is less than 2.4.

9. A method of forming a low k dielectric layer including:

a) depositing an unset dielectric layer on a substrate by chemical vapour deposition, the dielectric layer including Silicon, Carbon and Oxygen;

b) forming or depositing a semi-permeable skin on or of the surface of the layer; and

c) setting the layer whereby at least part of the layer is porous.

10. A method as claimed in claim 9 where the unset dielectric layer is deposited by plasma enhanced chemical vapour deposition.

11. A method as claimed in claim 10 where the semi-permeable skin is formed by exposure of the unset dielectric layer to an activated gas.

16. A method as claimed in claim 11 where the gas is activated by electrical discharge or plasma.

17. A method as claimed by claim 9 where the unset dielectric layer is deposited as a liquid.

18. A method as claimed in claim 9 where the semi-permeable skin is deposited upon the surface of the unset dielectric layer.

19. A method as claimed in claim 9 where the semi-permeable skin is chemically vapour deposited.

20. A method as claimed in claim 19 where the semi-permeable skin is plasma enhanced chemical vapour deposited.

21. A method as claimed in claim 9 where the semi-permeable skin is liquid deposited.

22. A method as claimed in claim 9 where the semi-permeable skin is formed by at least partially curing a surface zone of the layer.

23. A method as claimed in claim 9 where the layer setting is at least predominately after the formation of the semi-permeable skin.

24. A method as claimed in claim 9 wherein the film is cured by an initial treatment period and a subsequent treatment period, the initial treatment period being such as to promote a lower cure rate than the subsequent period.

25. A method as claimed in claim 24 wherein the subsequent period is itself split into periods of increasing cure rates.

26. A method as claimed in claim 9 wherein the cure is achieved by the application of power and the power is lower during the initial period.

27. A method as claimed in claim 26 wherein the initial period is between 35 and 110 secs and the subsequent period is between 70 and 110 secs and wherein the power in the initial period is about 1100W and the power in the second period is between about 1500W and about 2000W.

28. A method as claimed in claim 9 where the setting of the layer includes heating to remove substantially all O—

H.

29. A method as claimed in claim 9 where the step of setting the layer includes exposing the layer to an activated gas.

30. A method as claimed in claim 29 where the activated gas is predominately hydrogen.

31. A method as claimed in claim 29 where the activation is by electrical discharge.

32. A method as claimed in claim 9 wherein the porosity of the layer consists predominately of closed cell voids.

33. A method as claimed in claim 9 where the layer is hydrophobic.

34. A method as claimed in claim 9 where the dielectric layer includes Si-CH_x where x is an integer from 1 to 3.

12. A method as claimed in 11 wherein the activated gas is predominately a constituent of the deposition gas mix.

13. A method as claimed in 11 where the activated gas is a gas of the deposition gas mix.

14. A method as claimed in 13 where the gas is continued after the deposition process is terminated by termination of the process gas flow.

15. A method as claimed in claim 14 wherein the process gases are pulsed whilst the gas is maintained.

35. A method of forming a low k dielectric layer including:

a) depositing an unset dielectric layer on a substrate, the dielectric layer including Silicon, Carbon and Oxygen;

b) exposing the surface of the dielectric layer to activated Nitrogen; and

c) exposing the layer to activated Hydrogen.

36. A method as claimed in claim 35 wherein the dielectric layer is deposited by chemical vapour deposition.

37. A method as claimed in claim 36 wherein the chemical vapour deposition gas mix includes Nitrogen.

38. A method as claimed in claim 36 wherein the deposition process gases are periodically switched off to enable a series of Nitrogen processes on the unset layer as it is progressively deposited.

39. A method as claimed in claim 35 wherein the flow rates of the process gases are adjusted to deposit a layer of a varying chemical composition.

40. A method as claimed in claim 35 wherein steps (a) and (b) are performed in a single chamber.

41. A method as claimed in claim 35 wherein step (b) is performed immediately after step (a).

42. A method as claimed in claim 35 wherein step (a) is performed on a substrate with no material D.C. bias and step (b) is performed on a substrate with a material D.C. bias.

43. A method as claimed in claim 42 wherein the substrate is located on a substrate support and the D.C. bias is applied by means of R.F. voltage to the substrate support.