Atomic layer deposition of hafnium-based high-k dielectric

• US 7,205,247 B2
• Filed: 09/29/2004
• Issued: 04/17/2007
• Est. Priority Date: 09/30/2003
• Status: Expired due to Fees

• Current Assignee: Aviza Technology Inc (Sumitomo Corporation)
• Original Assignee: Aviza Technology Inc (Sumitomo Corporation)
• Inventors: Senzaki, Yoshihide, Kapkin, Karem, Helms, Aubrey L. Jr., Lee, Sang-In, Owyang, Jon S.
• Primary Examiner(s): Everhart; Caridad
• Application Number:
  US10/954,819
• Publication Number:
  US 20050235905A1
• Time in Patent Office: 930 Days
• Field of Search: 438/785, 257/E21.009, 427/255.31, 427/255.23
• US Class Current: 438/785
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/42 Silicides
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: C30B 25/165 the flow of the reactive gases
• CPC Class Codes: C30B 29/16 Oxides
• CPC Class Codes: H01L 21/02148 the material containing hafnium, e.g. HfSiOx or HfSiON
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02205 the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31645 Deposition of Hafnium oxides, e.g. HfO2

Abstract

A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.

Claims

1. A method of depositing a hafnium-based dielectric film comprising the step of atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor wherein the hafnium precursor comprises TDMAHf, TDEAHf, Hf(MMP)₄, or TEMAHf.

2. The method of claim 1 wherein the atomic layer deposition is conducted under a temperature below 400°

C.

3. The method of claim 1 wherein the one or more reactants and ozone are injected into an ALD chamber through a showerhead injector.

4. The method of claim 1 wherein the one or more reactants further comprise a silicon precursor and the hafnium-based dielectric film comprises a hafnium silicate layer atop a substrate and an interfacial silicon oxide layer between the hafnium silicate layer and the substrate.

5. The method of claim 4 wherein the silicon precursor and hafnium precursor are mixed and co-injected into an ALD chamber during the atomic layer deposition.

6. The method of claim 4 wherein the silicon precursor and hafnium precursors are alternatively and independently injected into an ALD chamber during the atomic layer deposition.

7. A semiconductor device comprising:

a substrate;

a hafnium-based dielectric layer formed atop the substrate; and

an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.

8. The semiconductor device of claim 7 wherein the hafnium-based dielectric is an amorphous.

9. The semiconductor device of claim 7 wherein the hafnium-based dielectric comprises hafnium dioxide.

10. The semiconductor device of claim 7 wherein the hafnium-based dielectric comprises hafnium silicates.

11. The semiconductor device of claim 7 wherein the thickness of the interfacial layer is in the range of about 2–

5 angstroms.

12. The semiconductor device of claim 7 further comprising an electrode layer atop the hafnium-based dielectric layer.

13. The semiconductor device of claim 12 wherein the electrode layer is a gate electrode.