Method and apparatus for implement XANES analysis

• US 7,206,375 B2
• Filed: 12/01/2005
• Issued: 04/17/2007
• Est. Priority Date: 06/02/2003
• Status: Expired due to Fees

• Current Assignee: X-Ray Optical Systems Incorporated (Veralto Corp.)
• Original Assignee: X-Ray Optical Systems Incorporated (Veralto Corp.)
• Inventors: Chen, Zewu, Gibson, Walter
• Primary Examiner(s): Glick; Edward J.
• Assistant Examiner(s): Kiknadze; Irakli
• Application Number:
  US11/291,349
• Publication Number:
  US 20060120508A1
• Time in Patent Office: 502 Days
• Field of Search: 378 50- 56, 378 70- 73, 378 82- 87
• US Class Current: 378/51
• CPC Class Codes: G01N 23/02 by transmitting the radiation through the material
• CPC Class Codes: G01N 23/083 the radiation being X-rays
• CPC Class Codes: G21K 2201/062 the element being a crystal
• CPC Class Codes: G21K 2201/064 having a curved surface

Abstract

Compact, low-power-consuming systems and methods for exposing samples to high-energy radiation, for example, for exposing samples to x-rays for implementing x-ray absorption near edge analysis (XANES). The systems and methods include a low-power-consuming radiation source, such as an x-ray tube; one or more tunable crystal optics for directing and varying the energy of the radiation onto a sample under analysis; and a radiation detecting device, such as an x-ray detector, for detecting radiation emitted by the sample. The one or more tunable crystal optics may be doubly-curved crystal optics. The components of the system may be arranged in a collinear fashion. The disclosed systems and methods are particularly applicable to XANES analysis, for example, XANES analysis of the chemical state of chromium or another transition metal in biological processes.

Claims

1. A system for performing x-ray absorption near-edge structure analysis, the system comprising:

a focusing, doubly-curved x-ray optic for directing x-rays having a first energy onto a sample;

a detector for detecting x-rays having a second energy emitted by the sample when the sample is exposed to x-rays;

means for varying the first energy of the x-rays directed onto the sample wherein the second energy of the x-rays emitted by the sample varies responsive thereto; and

means for analyzing the variation in the second energy of the detected x-rays to provide information concerning near-edge structure of an x-ray absorption spectrum of the sample.

2. The system as recited in claim 1, wherein the x-ray optic comprises a point focusing, doubly curved x-ray optic.

3. The system as recited in claim 2, wherein the x-ray optic comprises a tunable x-ray optic and wherein the means for varying the first energy of the x-rays directed on the sample comprises means for tuning the tunable x-ray optic.

4. The system as recited in claim 3, wherein tuning the x-ray optic comprises θ

-2θ

tuning.

5. The system as recited in claim 3, wherein tuning the x-ray optic comprises x-x tuning, or x-2x tuning.

6. The system as recited in claim 3, wherein the tunable x-ray optic has an axis, and tuning the x-ray optic comprises means for rotating the tunable x-ray optic about the axis.

7. The system as recited in claim 3, wherein the tunable x-ray optic comprises a crystal optic.

8. The system as recited in claim 7, wherein the first energy of the x-rays directed onto the sample by the crystal optic has a predetermined diffraction energy bandwidth.

9. The system as recited in claim 8, wherein the predetermined diffraction energy bandwidth has a resolution of less than about 10 electron-Volts.

10. The system as recited in claim 2, wherein the x-ray optic comprises a silicon crystal optic having 311 diffraction planes;

wherein the silicon crystal comprises;

a major bending diameter (2R) of about 220 mm;

a minor bending radius (r) of about 90 mm;

a focal distance (f) of about 140 mm; and

a Bragg angle (θ

_B) of about 40 degrees.

11. The system as recited in claim 10, wherein the silicon crystal optic directs a predetermined focusing energy of about 6.0 kilo-electron-Volts onto the sample.

12. The system as recited in claim 11, wherein the silicon crystal optic produces a focal spot having its largest dimension less than about 100 microns on the sample.

13. The system as recited in claim 2, further comprising a microfocus x-ray source for producing the x-rays.

14. The system as recited in claim 13, wherein the microfocus x-ray source is a sealed microfocus x-ray tube having a heavy element target.

15. The system as recited in claim 13, wherein the microfocus x-ray source consumes less than about 80 Watts.

16. The system as recited in claim 1, wherein the sample contains an element comprising one of chromium (Cr), copper (Cu), nickel (Ni), and cadmium, and the information concerning near-edge structure of an x-ray absorption spectrum comprises information concerning near-edge structure of an x-ray absorption spectrum for the element.

17. The system as recited in claim 1, wherein the means for directing x-rays having a first energy comprises an x-ray optic having an azimuth angle greater than about 90 degrees.

18. The system as recited in claim 17, further comprising an x-ray source and wherein the means for varying the first energy of the x-rays comprises means for varying the location of the x-ray source relative to the location of the x-ray optic.

19. The system as recited in claim 18, wherein the system comprises an optical axis and wherein the means for varying the location of the x-ray source relative to the location of the x-ray optic comprises means for translating the x-ray source along the optical axis.

20. A method of practicing x-ray absorption near-edge structure analysis, the method comprising:

directing x-rays having a first energy onto a sample using a focusing, doubly-curved x-ray optic;

detecting x-rays having a second energy emitted by the sample when the sample is exposed to x-rays;

varying the first energy of the x-rays directed onto the sample wherein the second energy of the x-rays emitted by the sample varies responsive thereto; and

analyzing the variation in the second energy of the detected x-rays to provide information concerning near-edge structure of an x-ray absorption spectrum of the sample.

21. The method as recited in claim 20, wherein the x-ray optic is a point focusing, doubly curved x-ray optic.

22. The method as recited in claim 21, wherein the x-ray optic is a tunable x-ray optic and wherein varying the first energy of the x-rays comprises tuning the x-ray optic.

23. The method as recited in claim 22, wherein tuning the x-ray optic comprises θ

-2θ

tuning.

24. The method as recited in claim 22, wherein tuning the x-ray optic comprises x-x tuning, or x-2x tuning.

25. The method as recited claim 22, wherein the tunable x-ray optic has an axis, and tuning the x-ray optic comprises rotating the tunable x-ray optic about the axis.

26. The method as recited in claim 21, wherein directing x-rays comprises providing a source of x-rays which comprises a microfocus x-ray source.

27. The method as recited in claim 26, wherein directing x-rays comprises providing a source of x-rays which consumes less than about 80 Watts.

28. The method as recited claim 20, wherein directing x-rays having a first energy comprises providing a source of x-rays and providing an x-ray optic for diffracting x-rays and wherein varying the first energy of the x-rays comprises varying the location of the source of x-rays relative to the x-ray optic.

29. The method as recited claim 28, wherein the source of x-rays and the x-ray optic comprise an optical axis, and wherein varying the location of the source of x-rays relative to the x-ray optic comprises translating the source of x-rays along the optical axis.

30. The method as recited in claim 20, wherein the method is practiced in less than about 1 hour.

31. The method as recited in claim 30, wherein the method is practiced in less than about 30 minutes.