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Metal oxide sensors and method of forming

  • US 7,208,327 B2
  • Filed: 05/25/2005
  • Issued: 04/24/2007
  • Est. Priority Date: 05/25/2005
  • Status: Expired due to Fees
First Claim
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1. A method of forming a metal oxide sensor comprising:

  • depositing a metal layer on a semiconductor substrate;

    forming nanostructures within the metal layer;

    oxidizing the metal layer to form a metal oxide semiconductor;

    depositing a metallic layer on the metal oxide semiconductor; and

    forming gas sensor contacts on the deposited metallic layer.

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